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EPC2012 EPC - Transistors - FETs, MOSFETs - Single

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Compare Parts Datasheets Image Digi-Key Part Number Manufacturer Part Number Manufacturer Description Quantity Available
Unit Price
AUD
Minimum Quantity Packaging Series Part Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Mounting Type Supplier Device Package Package / Case
   
EPC2012C Datasheet EPC2012C - EPC 917-1084-2-ND EPC2012C EPC GANFET N-CH 200V 5A DIE OUTLINE 27,500 - Immediate Available: 27,500 AU$1.72380 2,500 Minimum: 2,500 Tape & Reel (TR)
Alternate Packaging
eGaN® Active N-Channel GaNFET (Gallium Nitride) 200V 5A (Ta) 5V 100mOhm @ 3A, 5V 2.5V @ 1mA 1.3nC @ 5V +6V, -4V 140pF @ 100V
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-40°C ~ 150°C (TJ) Surface Mount Die Outline (4-Solder Bar) Die
EPC2012C Datasheet EPC2012C - EPC 917-1084-1-ND EPC2012C EPC GANFET N-CH 200V 5A DIE OUTLINE 27,689 - Immediate Available: 27,689 AU$3.73000 1 Minimum: 1 Cut Tape (CT)
Alternate Packaging
eGaN® Active N-Channel GaNFET (Gallium Nitride) 200V 5A (Ta) 5V 100mOhm @ 3A, 5V 2.5V @ 1mA 1.3nC @ 5V +6V, -4V 140pF @ 100V
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-40°C ~ 150°C (TJ) Surface Mount Die Outline (4-Solder Bar) Die
EPC2012C Datasheet EPC2012C - EPC 917-1084-6-ND EPC2012C EPC GANFET N-CH 200V 5A DIE OUTLINE 27,689 - Immediate Available: 27,689 Digi-Reel® 1 Minimum: 1 Digi-Reel®
Alternate Packaging
eGaN® Active N-Channel GaNFET (Gallium Nitride) 200V 5A (Ta) 5V 100mOhm @ 3A, 5V 2.5V @ 1mA 1.3nC @ 5V +6V, -4V 140pF @ 100V
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-40°C ~ 150°C (TJ) Surface Mount Die Outline (4-Solder Bar) Die
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17:25:59 5/17/2021