MBRD835L Datasheet by ON Semiconductor

0N Semiconduﬂor® www.0nseml.com » ﬂnﬂ For inlormation on tape includmg pan oriemana refer to our Tape and R Brochure BRDHDI 1 ID

June, 2017 − Rev. 12

1Publication Order Number:

MBRD835L/D

MBRD835L, SBRD8835L

Switch-mode

Power Rectifier

DPAK Surface Mount Package

This switch−mode power rectifier which uses the Schottky Barrier

principle with a proprietary barrier metal, is designed for use as output

rectifiers, free wheeling, protection and steering diodes in switching

power supplies, inverters and other inductive switching circuits.

Features

•Low Forward Voltage

•150°C Operating Junction Temperature

•Epoxy Meets UL 94 V−0 @ 0.125 in

•Compact Size

•Lead Formed for Surface Mount

•SBRD8 Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

•These Devices are Pb−Free and are RoHS Compliant

Mechanical Characteristics

•Case: Epoxy, Molded

•Weight: 0.4 Gram (Approximately)

•Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

•Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

•Shipped 75 Units Per Plastic Tube

•ESD Rating:

♦Machine Model = C (> 400 V)

♦Human Body Model = 3B (> 8000 V)

Device Package Shipping†

ORDERING INFORMATION

SCHOTTKY BARRIER

RECTIFIER

8.0 AMPERES, 35 VOLTS

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure BRD8011/D

MBRD835LT4G DPAK

(Pb−Free)

2,500 /

Tape & Reel

DPAK

CASE 369C

MARKING DIAGRAM

B835LG = Specific Device Number

A = Assembly Location*

Y = Year

WW = Work Week

G = Pb−Free Device

AYWW

835LG

MBRD835LG DPAK

(Pb−Free)

75 Units / Rail

www.onsemi.com

SBRD8835LG DPAK

(Pb−Free)

75 Units / Rail

SBRD835LT4G−VF01 DPAK

(Pb−Free)

2,500 /

Tape & Reel

SBRD8835LG−VF01 DPAK

(Pb−Free)

75 Units / Rail

SBRD8835LT4G−VF01 DPAK

(Pb−Free)

2,500 /

Tape & Reel

SBRD8835LT4G DPAK

(Pb−Free)

2,500 /

Tape & Reel

* The Assembly Location Code (A) is front side

optional. In cases where the Assembly Location is

stamped in the package bottom (molding ejecter

pin), the front side assembly code may be blank.

www onsem' com

MBRD835L, SBRD8835L

www.onsemi.com

MAXIMUM RATINGS

Rating Symbol Value Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

35 V

Average Rectified Forward Current

(At Rated VR, TC = 88°C)

IF(AV) 8.0

Peak Repetitive Forward Current

(At Rated VR, Square Wave, 20 kHz, TC = 80°C)

IFRM 16

Non−Repetitive Peak Surge Current

(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)

IFSM 75

Repetitive Avalanche Current

(Current Decaying Linearly to Zero in 1 s, Frequency Limited by TJmax)

IAR 2.0

Storage / Operating Case Temperature Tstg −65 to +150 °C

Operating Junction Temperature (Note 1) TJ−65 to +150 °C

Voltage Rate of Change (Rated VR) dv/dt 10,000 V/s

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RJA.

THERMAL CHARACTERISTICS

Characteristic Symbol Value Unit

Thermal Resistance − Junction−to−Case RJC 2.8 °C/W

Thermal Resistance − Junction−to−Ambient (Note 2) RJA 80 °C/W

2. Rating applies when surface mounted on the minimum pad size recommended.

ELECTRICAL CHARACTERISTICS

Characteristic Symbol Value Unit

Maximum Instantaneous Forward Voltage (Note 3)

(iF = 8 Amps, TC = + 25°C)

(iF = 8 Amps, TC = +125°C)

VF0.51

0.41

Maximum Instantaneous Reverse Current (Note 3)

(Rated dc Voltage, TC = + 25°C)

(Rated dc Voltage, TC = +100°C)

IR1.4

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤ 2%.

MBRD835L, SBRD8835L

www.onsemi.com

TYPICAL CHARACTERISTICS

0.1

0 0.6

vF, INSTANTANEOUS VOLTAGE (VOLTS)

Figure 1. Maximum Forward Voltage Figure 2. Typical Forward Voltage

iF, INSTANTANEOUS FORWARD CURRENT (mA)

0.01 0.1 0.2 0.3 0.4 0.5

TJ = 125°C25°C

0.1

0 0.6

VF, INSTANTANEOUS VOLTAGE (VOLTS)

0.01 0.1 0.2 0.3 0.4 0.5

75°C

IF, INSTANTANEOUS FORWARD CURRENT (AMPS)

25°C

TJ = 125°C

0.1

035

VF, REVERSE VOLTAGE (VOLTS)

Figure 3. Maximum Reverse Current Figure 4. Typical Reverse Current

0.001 5101520

TJ = 125°C

25°C

0.1

VR, REVERSE VOLTAGE (VOLTS)

0.01 5101520

TJ = 125°C

75°C

25°C

IR, REVERSE CURRENT (mA)

0.01

100

1000

100

100°C

25 30 25 30 35

\ ‘ \ \ \ \MRESISTNE L0\ ‘ \\\ SQUARE w»xv?\ ‘LK \\ >< \="" \="" 10="" \\=""> -_* \\\ \ 2‘0 \\§ 4V—Vi ‘ ‘ ‘ W SQUAREWAVE n , (RES‘STIVE LOAD \ ‘ ‘ ‘ SQUARE WA ‘FK ‘AV / nse

MBRD835L, SBRD8835L

www.onsemi.com

TYPICAL CHARACTERISTICS

80 130

TC, CASE TEMPERATURE (°C)

0 130

TA, AMBIENT TEMPERATURE (°C)

TJ = 125°C

IF(AV), AVERAGE FORWARD CURRENT (AMPS)

14.4

12.8

11.2

9.6

6.4

4.8

3.2

1.6

85 90 95 100 105 110 115 120 125

SQUARE WAVE IPK

IAV +5(CAPACITIVE

LOAD)

IF(AV), AVERAGE FORWARD CURRENT (AMPS)

5010 20 30 40 8060 70 10090 110 120

 (RESISTIVE LOAD)

SQUARE WAVE

 (RESISTIVE LOAD)

TJ = 125°C

IPK

IAV +5(CAPACITIVE

LOAD)

RJA = 40°C/W

SURFACE MOUNTED ON

MINIMUM RECOMMENDED

PAD SIZE

RJA = 6°C/W

Figure 5. Maximum and Typical Capacitance

VR, REVERSE VOLTAGE (VOLTS)

100 10

1000

C, CAPACITANCE (pF)

TYPICAL

MAXIMUM

TJ = 25°C

Figure 6. Current Derating, Infinite Heatsink Figure 7. Current Derating

3.5

TA, AMBIENT TEMPERATURE (°C)

IF(AV), AVERAGE FORWARD CURRENT (AMPS)

1.5 3 4.5 6

4.5

IF(AV), AVERAGE FORWARD CURRENT (AMPS)

2.5

1.5

0.5

1305020 30 40 8060 70 10090 110 120

TJ = 125°C



(RESISTIVE LOAD)

SQUARE WAVE

PF(AV), AVERAGE FORWARD POWER DISSIPATION (WATTS)

7.5 9 10.5 12 13.5 15

TJ = 125°C

 (RESISTIVE LOAD)

SQUARE WAVE

IPK

IAV +5(CAPACITIVE

LOAD)

RJA = 80°C/W

SURFACE MOUNTED ON

MINIMUM RECOMMENDED

PAD SIZE

IPK

IAV +5(CAPACITIVE

LOAD)

Figure 8. Current Derating, Free Air Figure 9. Forward Power Dissipation

: / 4 \ A, c4“? mm mm max mu MAX A was mm m 235 m uuua nuns mm m h was mass as: was b2 uuza mus D72 m 0I005®I ‘ ‘ 4 b, m $ e um mm 045 m n2 um mm 045 m ‘ ‘ n was ms 597 522 , , : Mac 0255 5:5 573 f f e nusnﬁsc mass swag smme \ \ N mm mm 94a Man i ”A": “5”“ “WU L unss‘nam un‘na , t i u unoREF was; u uuznasc 051536 f L m u was new nag 127 “a u new m 2 was 393 DETAILA ””1“” cw SOLDERING FOOTPRINT“ 6.20 3.01: 9 0.244 ' 0.118 ”E .102 5"“ 1.60 T 617 “f“ mm 0.243 SCALE 3‘ (MEL) "Fov addinona‘ Infovmahcn on em Pia-Free strategy and soldering detai‘s‘ p‘ease download the ON Semiconducmr Soldenng and Mounllng Techniques Reference Manuah SOLDERRM/D, a a e Mademavks m Semxcunduclm Cnmpnnems In "sine \ghlsmanumhernlpalems \rademavks Dav www menu cumrsuerguwaxem Mavkmg gm

MBRD835L, SBRD8835L

www.onsemi.com

PACKAGE DIMENSIONS

DPAK (SINGLE GAUGE)

CASE 369C

ISSUE F

5.80

0.228

2.58

0.102

1.60

0.063

6.20

0.244

3.00

0.118

6.17

0.243

ǒmm

inchesǓ

SCALE 3:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

0.005 (0.13) C

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

D0.235 0.245 5.97 6.22

E0.250 0.265 6.35 6.73

A0.086 0.094 2.18 2.38

b0.025 0.035 0.63 0.89

c2 0.018 0.024 0.46 0.61

b2 0.028 0.045 0.72 1.14

c0.018 0.024 0.46 0.61

e0.090 BSC 2.29 BSC

b3 0.180 0.215 4.57 5.46

L4 −−− 0.040 −−− 1.01

L0.055 0.070 1.40 1.78

L3 0.035 0.050 0.89 1.27

Z0.155 −−− 3.93 −−−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME

Y14.5M, 1994.

2. CONTROLLING DIMENSION: INCHES.

3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-

MENSIONS b3, L3 and Z.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD

FLASH, PROTRUSIONS, OR BURRS. MOLD

FLASH, PROTRUSIONS, OR GATE BURRS SHALL

NOT EXCEED 0.006 INCHES PER SIDE.

5. DIMENSIONS D AND E ARE DETERMINED AT THE

OUTERMOST EXTREMES OF THE PLASTIC BODY.

6. DATUMS A AND B ARE DETERMINED AT DATUM

PLANE H.

7. OPTIONAL MOLD FEATURE.

12 3

H0.370 0.410 9.40 10.41

A1 0.000 0.005 0.00 0.13

L1 0.114 REF 2.90 REF

L2 0.020 BSC 0.51 BSC

HDETAIL A

SEATING

PLANE

L2 GAUGE

PLANE

DETAIL A

ROTATED 90 CW5

BOTTOM VIEW

SIDE VIEW

TOP VIEW

ALTERNATE

CONSTRUCTIONS

NOTE 7

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

MBRD835L/D

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor

19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA