MBRD835L Datasheet by ON Semiconductor

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© Semiconductor Components Industries, LLC, 2012
June, 2017 Rev. 12
1Publication Order Number:
MBRD835L/D
MBRD835L, SBRD8835L
Switch-mode
Power Rectifier
DPAK Surface Mount Package
This switchmode power rectifier which uses the Schottky Barrier
principle with a proprietary barrier metal, is designed for use as output
rectifiers, free wheeling, protection and steering diodes in switching
power supplies, inverters and other inductive switching circuits.
Features
Low Forward Voltage
150°C Operating Junction Temperature
Epoxy Meets UL 94 V0 @ 0.125 in
Compact Size
Lead Formed for Surface Mount
SBRD8 Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These Devices are PbFree and are RoHS Compliant
Mechanical Characteristics
Case: Epoxy, Molded
Weight: 0.4 Gram (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Shipped 75 Units Per Plastic Tube
ESD Rating:
Machine Model = C (> 400 V)
Human Body Model = 3B (> 8000 V)
Device Package Shipping
ORDERING INFORMATION
SCHOTTKY BARRIER
RECTIFIER
8.0 AMPERES, 35 VOLTS
4
1
3
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure BRD8011/D
MBRD835LT4G DPAK
(PbFree)
2,500 /
Tape & Reel
DPAK
CASE 369C
MARKING DIAGRAM
B835LG = Specific Device Number
A = Assembly Location*
Y = Year
WW = Work Week
G = PbFree Device
AYWW
B
835LG
MBRD835LG DPAK
(PbFree)
75 Units / Rail
www.onsemi.com
SBRD8835LG DPAK
(PbFree)
75 Units / Rail
SBRD835LT4GVF01 DPAK
(PbFree)
2,500 /
Tape & Reel
SBRD8835LGVF01 DPAK
(PbFree)
75 Units / Rail
SBRD8835LT4GVF01 DPAK
(PbFree)
2,500 /
Tape & Reel
SBRD8835LT4G DPAK
(PbFree)
2,500 /
Tape & Reel
* The Assembly Location Code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package bottom (molding ejecter
pin), the front side assembly code may be blank.
www onsem' com
MBRD835L, SBRD8835L
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
35 V
Average Rectified Forward Current
(At Rated VR, TC = 88°C)
IF(AV) 8.0
A
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 kHz, TC = 80°C)
IFRM 16
A
NonRepetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
IFSM 75
A
Repetitive Avalanche Current
(Current Decaying Linearly to Zero in 1 s, Frequency Limited by TJmax)
IAR 2.0
A
Storage / Operating Case Temperature Tstg 65 to +150 °C
Operating Junction Temperature (Note 1) TJ65 to +150 °C
Voltage Rate of Change (Rated VR) dv/dt 10,000 V/s
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dPD/dTJ < 1/RJA.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance JunctiontoCase RJC 2.8 °C/W
Thermal Resistance JunctiontoAmbient (Note 2) RJA 80 °C/W
2. Rating applies when surface mounted on the minimum pad size recommended.
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 3)
(iF = 8 Amps, TC = + 25°C)
(iF = 8 Amps, TC = +125°C)
VF0.51
0.41
V
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, TC = + 25°C)
(Rated dc Voltage, TC = +100°C)
IR1.4
35
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%.
MBRD835L, SBRD8835L
www.onsemi.com
3
TYPICAL CHARACTERISTICS
10
1
0.1
0 0.6
vF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Maximum Forward Voltage Figure 2. Typical Forward Voltage
iF, INSTANTANEOUS FORWARD CURRENT (mA)
0.01 0.1 0.2 0.3 0.4 0.5
TJ = 125°C25°C
10
1
0.1
0 0.6
VF, INSTANTANEOUS VOLTAGE (VOLTS)
0.01 0.1 0.2 0.3 0.4 0.5
75°C
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
25°C
TJ = 125°C
10
1
0.1
035
VF, REVERSE VOLTAGE (VOLTS)
Figure 3. Maximum Reverse Current Figure 4. Typical Reverse Current
0.001 5101520
TJ = 125°C
25°C
10
1
0.1
0
VR, REVERSE VOLTAGE (VOLTS)
0.01 5101520
TJ = 125°C
75°C
25°C
IR, REVERSE CURRENT (mA)
IR, REVERSE CURRENT (mA)
0.01
100
1000
100
100°C
100°C
25 30 25 30 35
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MBRD835L, SBRD8835L
www.onsemi.com
4
TYPICAL CHARACTERISTICS
16
80 130
TC, CASE TEMPERATURE (°C)
0
8
7
6
0 130
TA, AMBIENT TEMPERATURE (°C)
0
TJ = 125°C
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
14.4
12.8
11.2
9.6
8
6.4
4.8
3.2
1.6
85 90 95 100 105 110 115 120 125
dc
SQUARE WAVE IPK
IAV +5(CAPACITIVE
LOAD)
10
20
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
5
4
3
2
1
5010 20 30 40 8060 70 10090 110 120
dc
(RESISTIVE LOAD)
SQUARE WAVE
10
20
(RESISTIVE LOAD)
TJ = 125°C
IPK
IAV +5(CAPACITIVE
LOAD)
RJA = 40°C/W
SURFACE MOUNTED ON
MINIMUM RECOMMENDED
PAD SIZE
RJA = 6°C/W
Figure 5. Maximum and Typical Capacitance
1
VR, REVERSE VOLTAGE (VOLTS)
100 10
1000
C, CAPACITANCE (pF)
TYPICAL
MAXIMUM
TJ = 25°C
Figure 6. Current Derating, Infinite Heatsink Figure 7. Current Derating
4
3.5
0
TA, AMBIENT TEMPERATURE (°C)
00
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
1.5 3 4.5 6
4.5
5
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
3
2.5
2
1.5
1
0.5
1305020 30 40 8060 70 10090 110 120
TJ = 125°C
dc
(RESISTIVE LOAD)
SQUARE WAVE
10
20
PF(AV), AVERAGE FORWARD POWER DISSIPATION (WATTS)
8
7
6
0
5
4
3
2
1
7.5 9 10.5 12 13.5 15
TJ = 125°C
dc
(RESISTIVE LOAD)
SQUARE WAVE
10
20
IPK
IAV +5(CAPACITIVE
LOAD)
RJA = 80°C/W
SURFACE MOUNTED ON
MINIMUM RECOMMENDED
PAD SIZE
IPK
IAV +5(CAPACITIVE
LOAD)
10
Figure 8. Current Derating, Free Air Figure 9. Forward Power Dissipation
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MBRD835L, SBRD8835L
www.onsemi.com
5
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
5.80
0.228
2.58
0.102
1.60
0.063
6.20
0.244
3.00
0.118
6.17
0.243
ǒmm
inchesǓ
SCALE 3:1
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
b
D
E
b3
L3
L4
b2
M
0.005 (0.13) C
c2
A
c
C
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
D0.235 0.245 5.97 6.22
E0.250 0.265 6.35 6.73
A0.086 0.094 2.18 2.38
b0.025 0.035 0.63 0.89
c2 0.018 0.024 0.46 0.61
b2 0.028 0.045 0.72 1.14
c0.018 0.024 0.46 0.61
e0.090 BSC 2.29 BSC
b3 0.180 0.215 4.57 5.46
L4 −−− 0.040 −−− 1.01
L0.055 0.070 1.40 1.78
L3 0.035 0.050 0.89 1.27
Z0.155 −−− 3.93 −−−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
12 3
4
H0.370 0.410 9.40 10.41
A1 0.000 0.005 0.00 0.13
L1 0.114 REF 2.90 REF
L2 0.020 BSC 0.51 BSC
A1
HDETAIL A
SEATING
PLANE
A
B
C
L1
L
H
L2 GAUGE
PLANE
DETAIL A
ROTATED 90 CW5
e
BOTTOM VIEW
Z
BOTTOM VIEW
SIDE VIEW
TOP VIEW
ALTERNATE
CONSTRUCTIONS
NOTE 7
Z
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PUBLICATION ORDERING INFORMATION
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81358171050
MBRD835L/D
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