BAV,SBAV99L Datasheet by ON Semiconductor

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© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 12 1Publication Order Number:
BAV99LT1/D
BAV99L, SBAV99L
Dual Series
Switching Diode
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (Each Diode)
Rating Symbol Value Unit
Reverse Voltage VR100 Vdc
Forward Current IF215 mAdc
Peak Forward Surge Current IFM(surge) 500 mAdc
Repetitive Peak Reverse Voltage VRRM 100 V
Average Rectified Forward Current (Note 1)
(averaged over any 20 ms period) IF(AV) 715 mA
Repetitive Peak Forward Current IFRM 450 mA
Non−Repetitive Peak Forward Current
t = 1.0 ms
t = 1.0 ms
t = 1.0 s
IFSM 2.0
1.0
0.5
A
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
FR−5 Board (Note 1) TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W
Junction and Storage
Temperature Range TJ, Tstg 65 to
+150
°C
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
Device Package Shipping
ORDERING INFORMATION
CASE 318
SOT−23
STYLE 11
MARKING DIAGRAM
3
CATHODE/ANODE
ANODE
1CATHODE
2
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
BAV99LT3G SOT−23
(Pb−Free) 10,000 / Tape & Ree
l
BAV99LT1G SOT−23
(Pb−Free) 3,000 / Tape & Reel
1
A7 MG
G
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
A7 = Device Code
M = Date Code*
G= Pb−Free Package
(Note: Microdot may be in either location)
SBAV99LT1G SOT−23
(Pb−Free) 3,000 / Tape & Reel
SBAV99LT3G SOT−23
(Pb−Free) 10,000 / Tape & Ree
l
www.onsemi.com
TA : 60°C
BAV99L, SBAV99L
www.onsemi.com
2
OFF CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode)
Characteristic Symbol Min Max Unit
Reverse Breakdown Voltage,
(I(BR) = 100 mA) V(BR) 100 Vdc
Reverse Voltage Leakage Current,
(VR = 100 Vdc)
(VR = 25 Vdc, TJ = 150°C)
(VR = 70 Vdc, TJ = 150°C)
IR
1.0
30
50
mAdc
Diode Capacitance,
(VR = 0, f = 1.0 MHz) CD 1.5 pF
Forward Voltage,
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
VF
715
855
1000
1250
mVdc
Reverse Recovery Time,
(IF = IR = 10 mAdc, iR(REC) = 1.0 mAdc) RL = 100 W
trr 6.0 ns
Forward Recovery Voltage,
(IF = 10 mA, tr = 20 ns) VFR 1.75 V
CURVES APPLICABLE TO EACH DIODE
VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)
Figure 1. Forward Voltage Figure 2. Leakage Current
Figure 3. Capacitance
0.1
1
10
100
1000
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
TA = 85°C
TA = 55°C
TA = 25°C
TA = −40°C
TA = −55°C
TA = 150°C
IF, FORWARD CURRENT (mA)
TA = 125°C
0.001
0.01
0.1
1.0
10
100
0 10203040506070
TA = 85°C
TA = 55°C
TA = 125°C
TA = 150°C
TA = 25°C
IR, REVERSE CURRENT (mA)
0.45
0.47
0.49
0.51
0.53
0.55
0.57
0.59
0.61
012345678
VR, REVERSE VOLTAGE (V)
Cd, DIODE CAPACITANCE (pF)
0 1.1 1.2
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SOT23 (TO236)
CASE 31808
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
D
A1
3
12
1
XXXMG
G
XXX = Specific Device Code
M = Date Code
G= PbFree Package
*This information is generic. Please refer to
device data sheet for actual part marking.
PbFree indicator, “G” or microdot “ G”,
may or may not be present.
GENERIC
MARKING DIAGRAM*
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
STYLE 22:
PIN 1. RETURN
2. OUTPUT
3. INPUT
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 7:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 11:
PIN 1. ANODE
2. CATHODE
3. CATHODEANODE
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 13:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 14:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 15:
PIN 1. GATE
2. CATHODE
3. ANODE
STYLE 16:
PIN 1. ANODE
2. CATHODE
3. CATHODE
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
3. CATHODE
STYLE 18:
PIN 1. NO CONNECTION
2. CATHODE
3. ANODE
STYLE 19:
PIN 1. CATHODE
2. ANODE
3. CATHODEANODE
STYLE 23:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 20:
PIN 1. CATHODE
2. ANODE
3. GATE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 1 THRU 5:
CANCELLED
STYLE 24:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 25:
PIN 1. ANODE
2. CATHODE
3. GATE
STYLE 26:
PIN 1. CATHODE
2. ANODE
3. NO CONNECTION
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c
0−−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW
END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
STYLE 28:
PIN 1. ANODE
2. ANODE
3. ANODE
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
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PAGE 1 OF 1
SOT23 (TO236)
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