2N7002DW Datasheet by Infineon Technologies

View All Related Products | Download PDF Datasheet
(ifineon , //~"\ {co-T Qua‘ified ROHS ‘f @ Halogen-Free suurce 0) pin gate (1 ) Pin 2 drain (2; pm a éW dram (1:. pl“ 6 gake (2) Pin 5 source (27 pin 4
2N7002DW
OptiMOS Small-Signal-Transistor
Features
• Dual N-channel
• Enhancement mode
• Logic level
• Avalanche rated
• Fast switching
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
• Halogen-free according to IEC61249-2-21
Parameter 1) Symbol Conditions Unit
Continuous drain current
IDTA=25 °C 0.30 A
TA=70 °C 0.24
Pulsed drain current
ID,pulse TA=25 °C 1.2
Avalanche energy, single pulse
EAS ID=0.3 A, RGS=25 W1.3 mJ
Reverse diode dv/dtdv/dt
ID=0.3 A, VDS=48 V,
di/dt=200 A/µs,
Tj,max=150 °C
6 kV/µs
Gate source voltage
VGS ±20 V
ESD class JESD22-A114 (HBM) class 0 (<250V)
Power dissipation
Ptot TA=25 °C 0.5 W
Operating and storage temperature
Tj, Tstg -55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
1) Remark: one of both transistors in operation.
Value
PG-SOT363
VDS
60
V
R
VGS=10 V
3
W
VGS=4.5 V
4
ID
0.3
A
Product Summary
Type
Package
Marking
HalogenFree
Packing
2N7002DW
PG-SOT363
X8s
Yes
Non Dry
Rev.2.3 page 1 2014-09-19
(ifineon ,
2N7002DW
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - minimal footprint2)
RthJA - - 250 K/W
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V(BR)DSS VGS= 0 V, ID=250 µA 60 - - V
Gate threshold voltage
VGS(th) VDS=VGS, ID=250 µA 1.5 2.1 2.5
Drain-source leakage current
ID (off)
VDS=60 V, VGS=-10 V,
Tj=25 °C
- - 0.1 µA
VDS=60 V,
VGS=0 V, Tj=150 °C
- - 5
Gate-source leakage current
IGSS VGS=20 V, VDS=0 V - 1 10 nA
Drain-source on-state resistance
RDS(on) VGS=4.5 V, ID=0.25 A -2.0 4W
VGS=10 V, ID=0.5 A -1.6 3
Transconductance
gfs
|VDS|>2|ID|RDS(on)max,
ID=0.24 A
0.2 0.36 - S
Values
2) Perfomed on a 40x40mm2 FR4 PCB with both sided Cu sense-force traces, each 1mm wide, 70μm thick and 20mm
long.
Rev.2.3 page 2 2014-09-19
(ifineon , Dynamic characteristics Reverse Diode
2N7002DW
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance
Ciss -13 20 pF
Output capacitance
Coss -4.1 6
Reverse transfer capacitance
Crss -2.0 3
Turn-on delay time
td(on) -3.0 4.5 ns
Rise time
tr-3.3 5
Turn-off delay time
td(off) -5.5 9
Fall time
tf-3.1 5
Gate Charge Characteristics
Gate to source charge
Qgs -0.05 0.1 nC
Gate to drain charge
Qgd -0.2 0.4
Gate charge total
Qg-0.4 0.6
Gate plateau voltage
Vplateau -4.0 - V
Reverse Diode
Diode continous forward current IS- - 0.3 A
Diode pulse current
IS,pulse - - 1.2
Diode forward voltage
VSD
VGS=0 V, IF=0.5 A,
Tj=25 °C
-0.96 1.2 V
Reverse recovery time
trr -8.5 13 ns
Reverse recovery charge
Qrr -2.4 4nC
VR=30 V, IF=0.5 A,
diF/dt=100 A/µs
TA=25 °C
Values
VGS=0 V, VDS=25 V,
f=1 MHz
VDD=30 V, VGS=10 V,
ID=0.5 A, RG,ext=6 W
VDD=48 V, ID=0.5 A,
VGS=0 to 10 V
Rev.2.3 page 3 2014-09-19
2N7002DW
1 Power dissipation 2 Drain current
Ptot=f(TA)ID=f(TA); VGS10 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TA=25 °C; D=0 ZthJA=f(tp)
parameter: tpparameter: D=tp/T
1 µs
10 µs
100 µs
1 ms
10 ms
DC
10-3
10-2
10-1
100
101
110 100
ID [A]
VDS [V]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10-5 10-4 10-3 10-2 10-1 100 101 102 103
100
101
102
103
ZthJA [K/W]
tp [s]
0
0.1
0.2
0.3
0.4
0.5
040 80 120 160
Ptot [W]
TAC]
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
040 80 120 160
ID [A]
TAC]
Rev.2.3 page 4 2014-09-19
2N7002DW
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
2.9 V 3.2 V 3.5 V 4 V
4.5 V
5 V 7 V
10 V
0
1
2
3
4
5
6
0 0.1 0.2 0.3 0.4 0.5
RDS(on) [W]
ID [A]
0
0.1
0.2
0.3
0.4
0.5
0.6
012345
ID [A]
VGS [V]
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0.00 0.10 0.20 0.30 0.40
gfs [S]
ID [A]
2.9 V
3.2 V
3.5 V
4 V
4.5 V
5 V
7 V
10 V
0
0.1
0.2
0.3
0.4
0.5
0.6
012345
ID [A]
VDS [V]
Rev.2.3 page 5 2014-09-19
S [f E
2N7002DW
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=0.3 A; VGS=10 V VGS(th)=f(Tj); VDS=VGS; ID=250 µA
parameter: ID
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz; Tj=25°C IF=f(VSD)
parameter: Tj
typ
98 %
0.0
1.0
2.0
3.0
4.0
5.0
6.0
-60 -20 20 60 100 140
RDS(on) [W]
TjC]
typ
98 %
2 %
0
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
-60 -20 20 60 100 140
VGS(th) [V]
TjC]
Ciss
Coss
Crss
100
101
102
010 20 30
C [pF]
VDS [V]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
10-3
10-2
10-1
100
0 0.4 0.8 1.2 1.6
IF [A]
VSD [V]
Rev.2.3 page 6 2014-09-19
nnnnnnnn Mi
2N7002DW
13Avalanche characteristics 14 Typ. gate charge
IAS =f(t AV ); R GS =25 ΩVGS=f(Qgate); ID=0.5 A pulsed
parameter: TJ(start) parameter: VDD
15 Drain-source breakdown voltage
VBR(DSS)=f(Tj); ID=250 µA
50
55
60
65
70
-40 040 80 120 160
VBR(DSS) [V]
TjC]
12 V
30 V
48 V
0
1
2
3
4
5
6
7
8
9
10
0 0.1 0.2 0.3 0.4 0.5
VGS [V]
Qgate [nC]
25 °C
100 °C
125 °C
100 101 102 103
10-3
10-2
10-1
100
IAV [A]
tAV [µs]
Rev.2.3 page 7 2014-09-19
(fifieon Package Outline: 2m 0.9m ‘ 0232.2 - 6‘ (1mm- ’ >4 d * '5 0.1“ p‘ 0| » A. ”-15 H5 fli A E f 3‘s g X! I) E "' J1 U2 Lia i °v P mavknn 055 055 ‘ 01531;, ‘ F‘ - > < 02="" v="" a="" gpya’isvj-fl="" v="" ~03.="" 23="" h.="" :3="" i]="" n="" n="" o'="" .—="" ij="" d="" d="" '="" 0‘65.="" -="" 4-1="" -="" 065="" warm="" hleosazs="" note:="" for="" symmetric="" types="" ihere="" is="" no="" defined="" pin="" 1="" orientation="" in="" the="" reel.="">
2N7002DW
SOT363
Package Outline:
Footprint: Packing:
Note: For symmetric types there is no defined Pin 1 orientation in the reel.
Dimensions in mm
Rev.2.3 page 8 2014-09-19
(ifineon , www.infineon.com .
2N7002DW
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev.2.3 page 9 2014-09-19

Products related to this Datasheet

MOSFET 2N-CH 60V 0.3A SOT363
MOSFET 2N-CH 60V 0.3A SOT363
MOSFET 2N-CH 60V 0.3A SOT363