BTS723GW Datasheet by Infineon Technologies

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@neon Operaling Vollage V 7.0 58V Aclive channels One two parallel On-state Resistance R N 105m!) 53m!) Nominal load currenl l 2.9A 4.2A Current limitalion l 8A 8A 12V and 24V and fl rSlams pull Vbb
Data Sheet 1 V1.1, 2007-09-25
Smart High-Side Power Switch
BTS723GW
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Data Sheet 2 V1.1, 2007-09-25
Smart High-Side Power Switch
BTS723GW
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@neon
Data Sheet 3 V1.1, 2007-09-25
Smart High-Side Power Switch
BTS723GW
Pin Definitions and Functions
Pin Symbol Function
1,7,
8,14, Vbb
Positive power supply voltage. Design the
wiring for the simultaneous max. short circuit
currents from channel 1 to 2 and also for low
thermal resistance
2 IN1
6 IN2
Input 1,2 activates channel 1,2 in case
of logic high signal
12,13 OUT1
9,10 OUT2
Output 1,2 protected high-side power output
of channel 1,2. Design the wiring for the max.
short circuit current; both outputpins have to be
connected in parallel for operation according
this spec.
3 ST1
5 ST2
Diagnostic feedback 1,2 of channel 1,2
open drain
4 GND Logic Ground
11 SPU
Connection for external pull up voltage source
for the open drain status output.
Pull up resistors are integrated.
Pin configuration
(top view)
Vbb 1 14 Vbb
IN1 2 13 OUT1
ST1 3 12 OUT1
GND 4 11 SPU
ST2 5 10 OUT2
IN2 6 9 OUT2
Vbb 7 8 Vbb
@neon |_|_ZO\|(D(D "U (DO
Data Sheet 4 V1.1, 2007-09-25
Smart High-Side Power Switch
BTS723GW
P
arameter Symbol Values Unit
S
upply voltage (overvoltage protection see page 6)
V
bb 58 V
S
upply voltage for full short circuit protection
T
j,start =-40 ...+150°C
V
bb 50 V
O
utput Voltage to Vbb
V
ON 70 V
N
egative voltage slope at output -d
V
OUT/d
t
20 V/µs
L
oad current (Short-circuit current, see page 7)
I
L
I
L(LIM)1)A
L
oad dump protection2)
V
LoadDump =
V
A +
V
s,
V
A = 27 V
R
I3)= 8 ,
t
d= 200 ms; IN = low or high,
each channel loaded with
R
L=20 ,
V
Load dump4)70 V
O
perating temperature range
S
torage temperature range
T
j
T
stg
-40 ...+150
-55 ...+150
°C
Power dissipation (DC)5)
T
a = 25°C:
(all channels active)
T
a = 85°C:
P
tot 3.0
1.6
W
M
aximal switchable inductance, single pulse
Vbb = 12V,
T
j,start = 150°C5),
I
L= 2.5 A,
E
AS = 110 mJ, 0 one channel:
I
L= 3.5 A,
E
AS = 278 mJ, 0 two parallel channels:
s
ee diagrams on page 12
ZL23.0
30.0
mH
Electrostatic discharge capability (ESD):
(
Human Body Model) acc. MIL-STD883D, method 3015.7 and ESD
a
ssn. std. S5.1-1993 R=1.5k; C=100pF
V
ESD 1.0 kV
Input voltage (DC)
V
IN ±42 V
C
urrent through input pin (DC)
C
urrent through status pin (DC)
I
IN
I
ST
±2.0
±2.0
mA
S
tatus pull up voltage
V
SPU ±42 V
1
) Current limit is a protection function. Operation in current limitation is considered as "outside" normal
operating range. Protection functions are not designed for continuous repetitive operation.
2
) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150
resistor for the GND connection is recommended.
3
)
R
I = internal resistance of the load dump test pulse generator
4
)VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
5
) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 15
@neon Values
Data Sheet 5 V1.1, 2007-09-25
Smart High-Side Power Switch
BTS723GW
Parameter and Conditions Symbol Values Unit
min typ Max
Thermal resistance
junction - soldering point5),6) each channel:
R
thjs -- -- 25 K/W
junction - ambient5) one channel active:
all channels active:
R
thja --
--
45
41
--
--
6) Soldering point: Upper side of solder edge of device pin 15. See page 15
Electrical Characteristics
Parameter and Conditions, each of the two channels Symbol Values Unit
at Tj = -40...+150°C,
V
bb = 24 V unless otherwise specified min typ Max
Load Switching Capabilities and Characteristics
On-state resistance (Vbb to OUT); IL = 2 A, Vbb 7V
each channel,
T
j = 25°C:
T
j = 150°C:
two parallel channels,
T
j = 25°C:
see diagram, page 12
R
ON --
--
--
90
170
45
105
210
53
m
@neon WW
Data Sheet 6 V1.1, 2007-09-25
Smart High-Side Power Switch
BTS723GW
Parameter and Conditions,
each of the two channels
Symbol Values Unit
at Tj = -40...+150°C,
V
bb = 24 V unless otherwise specified
min typ Max
Nominal load current one channel active:
two parallel channels active:
Device on PCB7),
T
a= 85°C,
T
j 150°C
I
L(NOM)
2.5
4.0
2.9
4.2
--
--
A
Output current
while GND disconnected or pulled up 8);
Vbb = 30 V,
V
IN = 0,
see diagram page 11
I
L(GNDhigh)
-- -- 1.0 mA
Turn-on time
9)
IN to 90%
V
OUT
:
Turn-off time IN to 10%
V
OUT
:
R
L
=12
t
on
t
off
--
--
--
--
55
95
µs
Slew rate on
9
)
10 to 30%
V
OUT,
R
L
=12:
d
V
/d
t
on
1.0 -- 5 V/µs
Slew rate off
9
)
70 to 40%
V
OUT
,
R
L
=12:
-d
V
/d
t
off
1.0 -- 5 V/µs
Operating Parameters
Operating voltage
V
bb(on)
7.0 -- 58 V
Undervoltage restart of charge pump
T
j
=-40...+25°C:
T
j
=+150°C:
V
bb(ucp)
--
--
4
--
5.5
7.0
V
Overvoltage protection
10)
I
bb
= 40 mA
V
bb(AZ)
58.5 63 69 V
Standby current
11
)
T
j
=-40°C...+25°C
:
T
j
=+125°C
12):
V
IN
=0;
see diagram page 10
T
j
=+150°C:
I
bb(off)
--
--
--
13
25
23
23
35
µA
Off-State output current (included in
I
bb(off)
)
V
IN
= 0; each channel
I
L(off)
-- 3 -- µA
Operating current
13)
,
V
IN
= 5V,
one channel on:
all channels on:
I
GND
--
--
1.0
2.0
1.5
3.0
mA
7) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 15
8) not subject to production test, specified by design
9) See timing diagram on page 13.
10)Supply voltages higher than Vbb(AZ) require an external current limit for the GND; a 150 resistor is
recommended. See also
V
ON(CL) in table of protection functions and circuit diagram on page 10.
11) Measured with load; for the whole device; all channels off
12) not subject to production test, specified by design
13)Add
I
ST, if
I
ST > 0
@neon IL=-3‘OA, T =+150°C hig omp mal up up
Data Sheet 7 V1.1, 2007-09-25
Smart High-Side Power Switch
BTS723GW
Parameter and Conditions,
each of the two channels
Symbol Values Unit
at Tj = -40...+150°C,
V
bb = 24 V unless otherwise specified
min typ Max
Protection Functions
14)
Current limit,
(see timing diagrams, page 13)
T
j
=-40°C:
T
j
=25°C:
T
j
=+150°C:
I
L(lim)
--
--
5
10
9
8
12
--
--
A
Repetitive short circuit current limit
15)
,
T
j
=
T
jt
each channel
two parallel channels
(see timing diagrams, page 13)
I
L(SCr)
--
--
8
8
--
--
A
Initial short circuit shutdown time
T
j,start
=25°C:
(see timing diagrams on page 13)
t
off(SC)
-- 2 -- ms
Output clamp (inductive load switch off)
16)
at VON(CL) = Vbb - VOUT,
I
L = 1 A
V
ON(CL)
59 64 70 V
Thermal overload trip temperature
T
jt
150 -- -- °C
Thermal hysteresis
T
jt
-- 10 -- K
Reverse Battery
Reverse battery voltage
17
) -
V
bb
-- -- 24 V
Drain-source diode voltage
(Vout > Vbb)18)
I
L
= - 3.0 A,
T
j
= +150°C
-
V
ON
-- 650 -- mV
Inverse current
19)
GND current in case of 3A inverse current
20
) I
GND(inv cur)
-- -- 15 mA
14) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
15) not subject to production test, specified by design
16)If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest
VON(CL)
17) Requires a 150 resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Power dissipation is higher compared to normal operating
conditions due to the voltage drop across the drain-source diode. The temperature protection is not active
during reverse current operation! Input and Status currents have to be limited (see max. ratings page 4 and
circuit page 10).
18) not subject to production test, specified by design
19) not subject to production test, specified by design
20) In case of an inverse current of 3A the both status outputs must not be disturbed.
The neighbour channel can be switched normally; not all paramters lay within the range of the spec
Please note, that in case of an inverse current no protection function is active. The power dissipation is
hi
g
her com
p
ared to normal o
p
eration in forward mode due to the volta
g
e dro
p
across the drain-source diode
@neon HS VSFU
Data Sheet 8 V1.1, 2007-09-25
Smart High-Side Power Switch
BTS723GW
Parameter and Conditions, each of the two channels Symbol Values Unit
at Tj = -40...+150°C,
V
bb = 24 V unless otherwise specified min typ Max
Diagnostic Characteristics
Open load detection current 21)
I
L(off) -- 3 -- µA
Open load detection voltage
V
OUT(OL) 2.0 2.85 3.7 V
Short circuit detection voltage 22)
Vbb(pin 1,7,8,14) to OUT1 (pin 12,13) resp.
Vbb(pin 1,7,8,14) to OUT2 ( pin 9,10)
V
ON(SC) -- 4.0 -- V
Input and Status Feedback 23)
Integrated resistors;
T
j =25°C: Input
(see circuit page 2) Status
Status pull up
R
I
R
ST
R
pull up
--
0.53
--
20
0.85
12
--
1.2
--
k
k
k
Input turn-on threshold voltage
V
IN(T+) 1.2 -- 2.2 V
Input turn-off threshold voltage
V
IN(T-) 1.0 -- -- V
Input threshold hysteresis
V
IN(T) -- 0.25 -- V
Off state input current
V
IN = 0.4 V:
I
IN(off) 1 -- 15 µA
On state input current
V
IN = 5 V:
I
IN(on) 10 25 50 µA
Status output (open drain)
Zener limit voltage
Status low voltage
V
SPU = 5V:
V
ST(high)
V
ST(low)
5.4
--
6.1
--
--
0.4
V
21) not subject to production test, specified by design
22) not subject to production test, specified by design
23)If a ground resistor RGND is used, add the voltage drop across these resistors.
@neon I? '*
Data Sheet 9 V1.1, 2007-09-25
Smart High-Side Power Switch
BTS723GW
Truth Table
Channel 1 Input 1 Output 1 Status 1
Channel 2 Input 2 Output 2 Status 2
level level BTS 723
Normal
operation
L
H
L
H
L
H
Open load L
H
VOUT > 2.7V
H
H
H
Short circuit
to GND
L
H
L
L
L
L
Short circuit
to Vbb
L
H
H
H
H
H
Overtem-
perature
L
H
L
L
L
L
Parallel switching of channel 1 and 2 is easily possible by connecting the inputs and outputs in parallel. In this
mode it is recommended to use only one status.
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Leadframe (Vbb) is connected to pin 1,7,8,14
External RGND optional; a single resistor RGND = 150 for reverse battery protection up to the max.
operating voltage.
@ineon
Data Sheet 10 V1.1, 2007-09-25
Smart High-Side Power Switch
BTS723GW
Input circuit (ESD protection), IN1 or IN2
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The use of ESD zener diodes as voltage clamp at DC
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RST = 850 typ., Rpull up =12k typ.
The use of ESD zener diodes as voltage clamp at DC
conditions is not recommended
Short Circuit detection
Fault Signal at ST-Pin:
V
ON > 4.0 V typ, no switch off by
the PROFET itself, external switch off recommended!
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Z1 = 6.1 V typ.,
V
Z2 = 63 V typ.,
R
GND = 150 ,
RI= 850 W\S, RST =20k typ., Rpull up =12k typ
In case of reverse battery the load current has to be
limited by the load. Temperature protection is not
active
@ineon
Data Sheet 11 V1.1, 2007-09-25
Smart High-Side Power Switch
BTS723GW
Open-load detection,
OUT1 or OUT2
OFF-state diagnostic condition:
Open load, if
V
OUT > 2.7 V typ. (IN low)
IL(OL) typ. 2µA
An external resitor can be used to increase the open
load detection current
2SHQORDG
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/RJLF
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921
287
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GND disconnect
352)(7
9
,1
67
287
*1'
EE
9EE 9,1 967 9
*1'
Any kind of load.
Due to VGND > 0, no VST = low signal available.
GND disconnect with GND pull up
352)(7
9
,1
67
287
*1'
EE
9EE 9*1'
9,1 967
Any kind of load. If VGND >
V
IN -
V
IN(T+) device stays off
Due to VGND > 0, no VST = low signal available.
V
bb
disconnect with energized inductive
load
352)(7
9
,1
67
287
*1'
EE
9EE
KLJK
For inductive load currents up to the limits defined by ZL
(max. ratings and diagram on page 12) each switch is
protected against loss of Vbb.
Consider at your PCB layout that in the case of Vbb dis-
connection with energized inductive load all the load current
flows through the GND connection.
@neon IL‘ \\ 11 TJ =150° 7f \ j/ 25%: (K J] -40“C (f
Data Sheet 12 V1.1, 2007-09-25
Smart High-Side Power Switch
BTS723GW
Inductive load switch-off energy
dissipation
352)(7
9
,1
67
287
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EE
(
(
(
($6
EE
/
5
(/RDG
5/
/
^
/
=
Energy stored in load inductance:
E
L = 1/2·L·I2
L
While demagnetizing load inductance, the energy
dissipated in PROFET is
E
AS= Ebb + EL - ER=
VON(CL)·iL(t) dt,
with an approximate solution for RL> 0 :
E
AS=IL·L
2·RL
(Vbb +|V
OUT(CL)|) OQ(1+ IL·RL
|VOUT(CL)| )
Maximum allowable load inductance for
a single switch off (one channel)5)
/ I,/Tj,start = 150°C, Vbb = 12 V, RL=0
ZL [mH]




I
L
[A]
Typ. on-state resistance
521 I9EE7M; IL= 2 A, IN = high
RON [mOhm]





  
7M &
&
&
V
bb [V]
Typ. standby current
,EERII I7M;Vbb = 9...34 V, IN1,2,3,4 = low
Ibb(off) [µA]








    
T
j [°C]
@neon Timing diagrams
Data Sheet 13 V1.1, 2007-09-25
Smart High-Side Power Switch
BTS723GW
Figure 1a: Vbb turn on, :
,1
9
287
W
9
EE
67RSHQGUDLQ
$
$
GEE,1
W
in case of too early
V
IN=high the device may not turn on (curve A)
t
d(bb IN) approx. 150 µs
Figure 2a: Switching a resistive load,
turn-on/off time and slew rate definition:
,1
W
9287
,/
W
W
on
off

G9GWRQ
G9GWRII

Figure 2b: Switching an inductive load
,1
67
287
/
W
9
,
Figure 3a: Short circuit:
shut down by overtempertature, reset by cooling
,1
67
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W
,
/6&U
,
,/OLP
9287
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RII6&
W
Timing diagrams
All channels are symmetric and consequently the diagrams are valid for channel 1 and
channel 2
@neon
Data Sheet 14 V1.1, 2007-09-25
Smart High-Side Power Switch
BTS723GW
Figure 4a: Overtemperature:
Reset if
T
j <
T
jt
,1
67
287
-
W
9
7
Figure 5a: Open load, : detection in OFF-state, open
load occurs in off-state
,1
67
287
/
W
9
,RSHQ QRUPDO
QRUPDO
 
2872/
9
*) IL = A typ. VOUT > 2.7V
Figure 6: Overvoltage, no shutdown:
,1
9
287
W
9
bb
67
ON(CL)
V
OUT(OL)
V
@neon
Data Sheet 15 V1.1, 2007-09-25
Smart High-Side Power Switch
BTS723GW
Package Outlines
Figure 1PG-DSO-14-37 (Plastic Dual Small Outline Package) (RoHS-compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-
free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Please specify the package needed (e.g. green package) when placing an order
1) Does not include plastic or metal protrusion of 0.15 max. per side
2) Lead width can be 0.61 max. in dambar area
-0.2
8.75
1)
0.64
0.19
+0.06
Index Marking
1.27
+0.10
0.41
0.1
1
14
2)
7
14x
8
0.175
(1.47)
±
0.07
±0.2
6
0.35 x 45˚
-0.2
1.75 MAX.
4
1)
±0.25
8˚MAX.
-0.06
0.2
M
AB
M
0.2 C
C
B
A
GPS01230
You can find all of our packages, sorts of packing and others in our
Infineon Internet Page “Products”: http://www.infineon.com/products.Dimensions in mm
@neon
Data Sheet 16 V1.1, 2007-09-25
Smart High-Side Power Switch
BTS723GW
Revision History
Version Date Changes
V1.1 2007-09-25 Modification of the package drawing
V1.0 2007-05-25 Creation of the green datasheet.
First page :
Adding the green logo and the AEC qualified
Adding the bullet AEC qualified and the RoHS compliant features
Package page :
Modification of the package to be green.
Edition 2007-09-25
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 9/25/07.
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.

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