BAT54HT1G Datasheet by ON Semiconductor

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— FAIRGHILD — SEMCQNDUGTQR'
BAT54HT1G — Schottky Barrier Diodes
© 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
BAT54HT1G Rev. 1.2.0 1
July 2013
BAT54HT1G
Schottky Barrier Diodes
Ordering Information
Absolute Maximum Ratings(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
* These ratings are limiting values above which the serviceability of the diode may be impaired.
Note:
1)These ratings are based on a maximum junction temperature of 150 °C.
These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Part Number Marking Package Packing Method
BAT54HT1G A2 SOD-323 2L Tape and Reel
Symbol Parameter Value Units
VRRM Maximum Repetitive Reverse Voltage 30 V
IF(AV) Average Rectified Forward Current 200 mA
IFSM Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second 600 mA
TSTG Storage Temperature Range -65 to +150 °C
TJOperating Junction Temperature -55 to +150 °C
Connection Diagram
1
2
2
1
A2
SOD-323
BAT54HT1G — Schottky Barrier Diodes
© 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
BAT54HT1G Rev. 1.2.0 2
Thermal Characteristics
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Value Units
PDPower Dissipation 200 mW
RθJA Thermal Resistance, Junction to Ambient 600 °C/W
Symbol Parameter Test Conditions Min. Max. Units
VRBreakdown Voltage IR = 10 μA30V
VFForward Voltage
IF = 0.1 mA 240 mV
IF = 1.0 mA 320 mV
IF = 10 mA 400 mV
IF = 30 mA 500 mV
IF = 100 mA 0.8 V
IRReverse Leakage VR = 25 V 2.0 μA
CTTotal Capacitance VR = 1 V, f = 1.0 MHz 10 pF
trr Reverse Recovery Time IF = IR = 10 mA, IRR = 1.0 mA,
RL = 100 Ω5.0 ns
BAT54HT1G — Schottky Barrier Diodes
© 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
BAT54HT1G Rev. 1.2.0 3
Typical Performance Characteristics
Figure 1. Forward Current Characteristics Figure 2. Reverse Leakage Current
Figure 3. Junction Capacitance
1E-6
1E-5
1E-4
1E-3
0.01
0.1
0.0 0.2 0.4 0.6 0.8
75 oC
150 oC
25 oC
100 oC
125 oC
Forward Voltage Drop, VF[V]
Forward Current, IF[A]
0 5 10 15 20 25 30
1E-8
1E-7
1E-6
1E-5
1E-4
1E-3
150 oC
125 oC
100 oC
75 oC
25 oC
Reverse Current, IR[A]
Reverse Voltage, VR[V]
0246810
3
4
5
7
8
9
11
12
13
15
16
Juntion Capacitance, CJ[pF]
Reverse Voltage, VR[V]
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BAT54HT1G — Schottky Barrier Diodes
© 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
BAT54HT1G Rev. 1.2.0 4
Physical Dimensions
Figure 4. 2-LEAD, SOD323, JEITA SC76 (FORMED LEADS) (ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/SO/SOD323.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-SOD323_BK.pdf.
SOD-323 2L
— FAIRCHILD — SEM‘EDNDUGTDR‘ FE SVS'IEM GENERAL: u M @555
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I64
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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
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