SI4427BDY Datasheet by Vishay Siliconix

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Vishay Siliconix
Si4427BDY
Document Number: 72295
S09-0764-Rev. D, 04-May-09
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1
P-Channel 30-V (D-S) MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
TrenchFET® Power MOSFETs
Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω)I
D (A)
- 30
0.0105 at VGS = - 10 V - 12.6
0.0125 at VGS = - 4.5 V - 11.5
0.0195 at VGS = - 2.5 V - 9.2
S
S
D
D
D
S
GD
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si4427BDY-T1-E3 (Lead (Pb)-free)
Si4427BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
G
D
P-Channel MOSFE
T
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage VDS - 30 V
Gate-Source Voltage VGS ± 12
Continuous Drain Current (TJ = 150 °C)aTA = 25 °C ID
- 12.6 - 9.7
A
TA = 70 °C - 10.1 - 7.7
Pulsed Drain Current IDM - 50
Continuous Source Current (Diode Conduction)aIS- 2.5 - 1.3
Maximum Power DissipationaTA = 25 °C PD
2.5 1.5 W
TA = 70 °C 1.6 0.9
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientat 10 s RthJA
40 50
°C/W
Steady State 70 85
Maximum Junction-to-Foot (Drain) Steady State RthJF 15 18
//
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Document Number: 72295
S09-0764-Rev. D, 04-May-09
Vishay Siliconix
Si4427BDY
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.60 - 1.4 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = - 30 V, VGS = 0 V - 1 µA
VDS = - 30 V, VGS = 0 V, TJ = 55 °C - 5
On-State Drain CurrentaID(on) V
DS - 5 V, VGS = - 10 V - 50 A
Drain-Source On-State ResistanceaRDS(on)
VGS = - 10 V, ID = - 12.6 A 0.0088 0.0105
Ω
VGS = - 4.5 V, ID = - 11.5 A 0.0105 0.0125
VGS = - 2.5 V, ID = - 5.1 A 0.0150 0.0195
Forward Transconductanceagfs VDS = - 15 V, ID = - 12.6 A 44 S
Diode Forward VoltageaVSD IS = - 2.5 A, VGS = 0 V - 0.8 - 1.2 V
Dynamicb
Total Gate Charge Qg
VDS = - 15 V, VGS = - 4.5 V, ID = - 12.6 A
47.2 70
nCGate-Source Charge Qgs 9.5
Gate-Drain Charge Qgd 16.6
Tur n - On De l ay T im e td(on)
VDD = - 15 V, RL = 15 Ω
ID - 1 A, VGEN = - 10 V, Rg = 6 Ω
12 20
ns
Rise Time tr15 25
Turn-Off Delay Time td(off) 242 360
Fall Time tf110 165
Source-Drain Reverse Recovery Time trr IF = - 2.5 A, dI/dt = 100 A/µs 70 110
Output Characteristics
0
10
20
30
40
50
012345
V
GS
= 10 V thru 2.5 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
2 V
1.5 V
Transfer Characteristics
0
10
20
30
40
50
0.0 0.5 1.0 1.5 2.0 2.5
TC = 125 °C
- 55 °C
25 °C
VGS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
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Document Number: 72295
S09-0764-Rev. D, 04-May-09
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Vishay Siliconix
Si4427BDY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
- On-Resistance (RDS(on) )
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0 1020304050
ID - Drain Current (A)
VGS = 10 V
VGS = 2.5 V
VGS = 4.5 V
0
2
4
6
8
10
0 20406080100
VDS = 15 V
ID = 12.6 A
- Gate-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
V
GS
0.0 0.2 0.4 0.6 0.8 1.0 1.2
TJ = 25 °C
50
10
1
VSD - Source-to-Drain Voltage (V)
- Source Current (A)IS
TJ = 150 °C
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
1000
2000
3000
4000
5000
6000
0 6 12 18 24 30
VDS
- Drain-to-Source Voltage (V)
Crss
Coss
Ciss
C - Capacitance (pF)
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
VGS = 10 V
ID = 12.6 A
TJ - Junction Temperature (°C)
RDS(on) - On-Resistance
(Normalized)
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0246810
ID = 12.6 A
- On-Resistance (R
DS(on)
)
VGS - Gate-to-Source Voltage (V)
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Document Number: 72295
S09-0764-Rev. D, 04-May-09
Vishay Siliconix
Si4427BDY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Threshold Voltage
- 0.2
0.0
0.2
0.4
0.6
- 50 - 25 0 25 50 75 100 125 150
ID = 250 µA
Variance (V)VGS(th)
TJ - Temperature (°C)
Single Pulse Power, Junction-to-Ambient
0
30
10
20
Power (W)
Time (s)
1 60010010-1
10-210
5
25
15
Safe Operating Area
100
1
0.1 1 10 100
0.01
TA = 25 °C
Single Pulse
- Drain Current (A)ID
P(t) = 10
DC
0.1
IDM
Limited
ID(on)
Limited
BVDSS Limited
P(t) = 1
P(t) = 0.1
P(t) = 0.01
P(t) = 0.001
P(t) = 0.0001
VDS
- Drain-to-Source Voltage (V)
* VGS minimum VGS at which RDS(on) is specified
>
Limited by
R(DS)on*
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
10-310-21 10 60010-1
10-4100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R thJA = 70 °C/W
3. TJM - TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
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Document Number: 72295
S09-0764-Rev. D, 04-May-09
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Vishay Siliconix
Si4427BDY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72295.
Normalized Thermal Transient Impedance, Junction-to-Foot
10-310-211010-1
10-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
— VISHAYm V HRH |-——-|
Vishay Siliconix
Package Information
Document Number: 71192
11-Sep-06
www.vishay.com
1
DIM
MILLIMETERS INCHES
Min Max Min Max
A 1.35 1.75 0.053 0.069
A10.10 0.20 0.004 0.008
B 0.35 0.51 0.014 0.020
C 0.19 0.25 0.0075 0.010
D 4.80 5.00 0.189 0.196
E 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.50 0.93 0.020 0.037
q0°8°0°8°
S 0.44 0.64 0.018 0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
4
3
12
5
6
87
HE
h x 45
C
All Leads
q0.101 mm
0.004"
L
BA
1
A
e
D
0.25 mm (Gage Plane)
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
S
Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR 50-8 0172 (A 359} n 246 (a 248) Recommended Mwmmum Pads Dwmensmns m Inches/(mm) VISHAY» Docmem Number 72606 Re w 2‘ rJaurOB
Application Note 826
Vishay Siliconix
www.vishay.com Document Number: 72606
22 Revision: 21-Jan-08
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR SO-8
0.246
(6.248)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.172
(4.369)
0.152
(3.861)
0.047
(1.194)
0.028
(0.711)
0.050
(1.270)
0.022
(0.559)
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Revision: 01-Jan-2021 1Document Number: 91000
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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