SI7615DN Datasheet by Vishay Siliconix

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m SPICE Device Model Si7615DN ‘ _L JI: {IT Le www.mshay Com/605791000
SPICE Device Model Si7615DN
www.vishay.com Vishay Siliconix
S12-2998-Rev. B, 10-Dec-12 1Document Number: 64900
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P-Channel 20 V (D-S) MOSFET
DESCRIPTION
The attached SPICE model describes the typical electrical
characteristics of the p-channel vertical DMOS. The
subcircuit model is extracted and optimized over the - 55 °C
to + 125 °C temperature ranges under the pulsed 0 V to
10 V gate drive. The saturated output impedance is best fit
at the gate bias near the threshold voltage. A novel
gate-to-drain feedback capacitance network is used to
model the gate charge characteristics while avoiding
convergence difficulties of the switched Cgd model. All
model parameter values are optimized to provide a best fit
to the measured electrical data and are not intended as an
exact physical interpretation of the device.
CHARACTERISTICS
P-Channel Vertical DMOS
Macro Model (Subcircuit Model)
•Level 3 MOS
Apply for both Linear and Switching Application
Accurate over the - 55 °C to + 125 °C Temperature Range
Model the Gate Charge, Transient, and Diode Reverse
Recovery Characteristics
SUBCIRCUIT MODEL SCHEMATIC
Note
This document is intended as a SPICE modeling guideline and does not constitute a commercial product datasheet. Designers should refer
to the appropriate datasheet of the same number for guaranteed specification limits.
D
S
DBD
C
GS
M1
G
3
R1
M2
Gx
R
G
C
GD
Gy
ETCV
+
m SPICE Device Model Si7615DN www.mshay com/d05791000
SPICE Device Model Si7615DN
www.vishay.com Vishay Siliconix
S12-2998-Rev. B, 10-Dec-12 2Document Number: 64900
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS
SIMULATED
DATA
MEASURED
DATA UNIT
Static
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 μA 0.80 - V
Drain-Source On-State Resistancea R
DS(on) VGS = - 10 V, ID = - 20 A 0.0034 0.0031
VGS = - 4.5 V, ID = - 15 A 0.0047 0.0043
Forward Transconductanceagfs VDS = - 10 V, ID = - 20 A 57 70 S
Diode Forward VoltageaVSD IS = - 4 A - 0.69 - 0.68 V
Dynamicb
Input Capacitance Ciss
VDS = - 10 V, VGS = 0 V, f = 1 MHz
6060 6000
pF Output Capacitance Coss 766 780
Reverse Transfer Capacitance Crss 412 820
Total Gate Charge Qg VDS = - 10 V, VGS = - 10 V, ID = - 10 A 107 122
nC
VDS = - 10 V, VGS = - 4.5 V, ID = - 10 A
54 62
Gate-Source Charge Qgs 9.4 9.4
Gate-Drain Charge Qgd 17.2 17.2
m SPICE Device Model Si7615DN V \ fie www.mshay Com/605791000
SPICE Device Model Si7615DN
www.vishay.com Vishay Siliconix
S12-2998-Rev. B, 10-Dec-12 3Document Number: 64900
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
COMPARISON OF MODEL WITH MEASURED DATA (TJ = 25 °C, unless otherwise noted)
Note
Dots and squares represent measured data.
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
ID - Drain Current (A)
Capacitance (pF)
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
VGS - Gate-to-Source Voltage (V)
IS - Source Current (A)
VSD - Source-to-Drain Voltage (V)
RDS(on) - On-Resistance (Ω)
0
16
32
48
64
80
0.0 0.5 1.0 1.5 2.0 2.5
VGS = 10 V, 6 V, 5 V, 4 V, 3 V
VGS = 2 V
0
2
4
6
8
10
0.0 0.6 1.2 1.8 2.4 3.0
TJ = 125 °C
TJ = 25 °C
TJ = - 55 °C
0.000
0.004
0.008
0.012
0.016
0.020
01632486480
VGS = 4.5 V
VGS = 10 V
0
1700
3400
5100
6800
8500
0 5 10 15 20
Ciss
Coss
Crss
0
2
4
6
8
10
0 25 50 75 100 125
VDS = 20 V
VDS = 15 V
ID = 10 A
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2
TJ = 150 °C
TJ = 25 °C
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Revision: 02-Oct-12 1Document Number: 91000
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