MCP1703 Datasheet by Microchip Technology

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© 2011 Microchip Technology Inc. DS22049F-page 1
MCP1703
Features:
2.0 µA Typical Quiescent Current
Input Operating Voltage Range: 2.7V to16.0V
250 mA Output Current for Output Voltages 2.5V
200 mA Output Current for Output Voltages < 2.5V
Low Dropout Voltage, 625 mV typical @ 250 mA
for VR = 2.8V
0.4% Typical Output Voltage Tolerance
Standard Output Voltage Options:
- 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V,
5.0V
Output Voltage Range: 1.2V to 5.5V in 0.1V
Increments (50 mV increments available upon
request)
Stable with 1.0 µF to 22 µF Ceramic Output
Capacitance
Short-Circuit Protection
Overtemperature Protection
Applications:
Battery-Powered Devices
Battery-Powered Alarm Circuits
Smoke Detectors
•CO
2 Detectors
Pagers and Cellular Phones
Smart Battery Packs
Low Quiescent Current Voltage Reference
•PDAs
•Digital Cameras
Microcontroller Power
Solar-Powered Instruments
Consumer Products
Battery-Powered Data Loggers
Related Literature:
AN765, “Using Microchip’s Micropower LDOs”,
DS00765, Microchip Technology Inc., 2002
AN766, “Pin-Compatible CMOS Upgrades to
Bipolar LDOs”, DS00766,
Microchip Technology Inc., 2002
AN792, “A Method to Determine How Much
Power a SOT23 Can Dissipate in an Application”,
DS00792, Microchip Technology Inc., 2001
Description:
The MCP1703 is a family of CMOS low dropout (LDO)
voltage regulators that can deliver up to 250 mA of
current while consuming only 2.0 µA of quiescent
current (typical). The input operating range is specified
from 2.7V to 16.0V, making it an ideal choice for two to
six primary cell battery-powered applications, 9V
alkaline and one or two cell Li-Ion-powered
applications.
The MCP1703 is capable of delivering 250 mA with
only 625 mV (typical) of input to output voltage
differential (VOUT = 2.8V). The output voltage tolerance
of the MCP1703 is typically ±0.4% at +25°C and ±3%
maximum over the operating junction temperature
range of -40°C to +125°C. Line regulation is ±0.1%
typical at +25°C.
Output voltages available for the MCP1703 range from
1.2V to 5.5V. The LDO output is stable when using only
1 µF of output capacitance. Ceramic, tantalum, or
aluminum electrolytic capacitors can all be used for
input and output. Overcurrent limit and overtemperature
shutdown provide a robust solution for any application.
Package options include the SOT-223-3, SOT-23A,
2x3 DFN-8, and SOT-89-3.
Package Types
1
3
2
VIN
GND VOUT
123
VIN
GND VOUT
3-Pin SOT-23A
3-Pin SOT-89
VIN
123
SOT-223-3
GND
VIN VOUT
NC
NC
GND
NC
NC
1
2
3
4
8
7
6
5NC
VOUT
EP
9
* Includes Exposed Thermal Pad (EP); see Table 3-1.
VIN
2x3 DFN-8 *
250 mA, 16V, Low Quiescent Current LDO Regulator
MCP1703
DS22049F-page 2 © 2011 Microchip Technology Inc.
Functional Block Diagrams
Typical Application Circuits
+
-
MCP1703
VIN VOUT
GND
+VIN
Error Amplifier
Voltage
Reference
Overcurrent
Overtemperature
MCP1703
VIN
CIN
F Ceramic
COUT
F Ceramic
VOUT
V
IN
3.3V
IOUT
50 mA
VIN
VOUT
9V
Battery
+
GND
© 2011 Microchip Technology Inc. DS22049F-page 3
MCP1703
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
VDD..................................................................................+18V
All inputs and outputs w.r.t. .............(VSS-0.3V) to (VIN+0.3V)
Peak Output Current ...................................................500 mA
Storage temperature .....................................-65°C to +150°C
Maximum Junction Temperature.................................+150°C
ESD protection on all pins (HBM;MM)............... 4kV; 400V
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, all limits are established for VIN = VOUT(MAX) + VDROPOUT(MAX), Note 1,
ILOAD = 100 µA, COUT = 1 µF (X7R), CIN = 1 µF (X7R), TA = +25°C.
Boldface type applies for junction temperatures, TJ (Note 7) of -40°C to +125°C.
Parameters Symbol Min Typ Max Units Conditions
Input / Output Characteristics
Input Operating Voltage VIN 2.7 16.0 VNote 1
Input Quiescent Current Iq—2.0 5µA IL = 0 mA
Maximum Output Current IOUT_mA 250 mA For VR 2.5V
50 100 mA For VR < 2.5V, VIN 2.7V
100 130 mA For VR < 2.5V, VIN 2.95V
150 200 mA For VR < 2.5V, VIN 3.2V
200 250 mA For VR < 2.5V, VIN 3.45V
Output Short Circuit Current IOUT_SC 400 mA VIN = VIN(MIN) (Note 1), VOUT = GND,
Current (average current) measured
10 ms after short is applied.
Output Voltage Regulation VOUT VR-3.0% VR±0.4% VR+3.0% VNote 2
VR-2.0% VR±0.4% VR+2.0% V
VR-1.0% VR±0.4% VR+1.0% V 1% Custom
VOUT Temperature Coefficient TCVOUT 50 ppm/°C Note 3
Line Regulation ΔVOUT/
(VOUTXΔVIN)
-0.3 ±0.1 +0.3 %/V (VOUT(MAX) + VDROPOUT(MAX)) VIN
16V, Note 1
Load Regulation ΔVOUT/VOUT -2.5 ±1.0 +2.5 %I
L = 1.0 mA to 250 mA for VR >= 2.5V
IL = 1.0 mA to 200 mA for VR < 2.5V
VIN = 3.65V, Note 4
Note 1: The minimum VIN must meet two conditions: VIN2.7V and VIN (VOUT(MAX) + VDROPOUT(MAX)).
2: VR is the nominal regulator output voltage. For example: VR = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, or 5.0V.
The input voltage VIN = VOUT(MAX) + VDROPOUT(MAX) or ViIN = 2.7V (whichever is greater); IOUT = 100 µA.
3: TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * ΔTemperature), VOUT-HIGH = highest voltage measured over the
temperature range. VOUT-LOW = lowest voltage measured over the temperature range.
4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCVOUT.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired junction temperature. The test time is small enough such that the rise in the junction temperature over the
ambient temperature is not significant.
MCP1703
DS22049F-page 4 © 2011 Microchip Technology Inc.
TEMPERATURE SPECIFICATIONS(1)
Dropout Voltage
Note 1, Note 5
VDROPOUT 330 650 mV IL = 250 mA, VR = 5.0V
525 725 mV IL = 250 mA, 3.3V VR < 5.0V
625 975 mV IL = 250 mA, 2.8V VR < 3.3V
750 1100 mV IL = 250 mA, 2.5V VR < 2.8V
—— — mVV
R < 2.5V, See Maximum Output
Current Parameter
Output Delay Time TDELAY 1000 µs VIN = 0V to 6V, VOUT = 90% VR,
RL = 50Ω resistive
Output Noise eN—8 µV/(Hz)
1/2 IL = 50 mA, f = 1 kHz, COUT = 1 µF
Power Supply Ripple
Rejection Ratio
PSRR 44 dB f = 100 Hz, COUT = 1 µF, IL = 100 µA,
VINAC = 100 mV pk-pk, CIN = 0 µF,
VR=1.2V
Thermal Shutdown Protection TSD — 150 °C
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Operating Junction Temperature Range TJ-40 +125 °C Steady State
Maximum Junction Temperature TJ +150 °C Transient
Storage Temperature Range TA-65 +150 °C
Thermal Package Resistance (Note 2)
Thermal Resistance, 3LD SOT-223 θJA
θJC
62
15
°C/W EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
Thermal Resistance, 3LD SOT-23A θJA
θJC
336
110
°C/W EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
Thermal Resistance, 3LD SOT-89 θJA
θJC
153,3
100
°C/W EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
Thermal Resistance, 8LD 2x3 DFN θJA
θJC
93
26
°C/W EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
2: Thermal Resistance values are subject to change. Please visit the Microchip web site for the latest packaging
information.
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise specified, all limits are established for VIN = VOUT(MAX) + VDROPOUT(MAX), Note 1,
ILOAD = 100 µA, COUT = 1 µF (X7R), CIN = 1 µF (X7R), TA = +25°C.
Boldface type applies for junction temperatures, TJ (Note 7) of -40°C to +125°C.
Parameters Symbol Min Typ Max Units Conditions
Note 1: The minimum VIN must meet two conditions: VIN2.7V and VIN (VOUT(MAX) + VDROPOUT(MAX)).
2: VR is the nominal regulator output voltage. For example: VR = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, or 5.0V.
The input voltage VIN = VOUT(MAX) + VDROPOUT(MAX) or ViIN = 2.7V (whichever is greater); IOUT = 100 µA.
3: TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * ΔTemperature), VOUT-HIGH = highest voltage measured over the
temperature range. VOUT-LOW = lowest voltage measured over the temperature range.
4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCVOUT.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired junction temperature. The test time is small enough such that the rise in the junction temperature over the
ambient temperature is not significant.
© 2011 Microchip Technology Inc. DS22049F-page 5
MCP1703
2.0 TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater.
Note: Junction Temperature (TJ) is approximated by soaking the device under test to an ambient temperature equal to the desired junction
temperature. The test time is small enough such that the rise in Junction temperature over the Ambient temperature is not significant.
FIGURE 2-1: Quiescent Current vs. Input
Voltage.
FIGURE 2-2: Quiescent Current vs. Input
Voltage.
FIGURE 2-3: Quiescent Current vs. Input
Voltage.
FIGURE 2-4: Ground Current vs. Load
Current.
FIGURE 2-5: Ground Current vs. Load
Current.
FIGURE 2-6: Quiescent Current vs.
Junction Temperature.
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0.00
1.00
2.00
3.00
4.00
5.00
6.00
24681012141618
Input Voltage (V)
Quiescent Current (µA)
VOUT = 1.2V
IOUT = 0 µA
+25°C
+130°C
-45°C
0°C
+90°C
0.00
1.00
2.00
3.00
4.00
5.00
6.00
24681012141618
Input Voltage (V)
Quiescent Current (µA)
VOUT = 2.5V
IOUT = 0 µA
+25°C
+130°C
-45°C
0°C
+90°C
1.00
2.00
3.00
4.00
5.00
6.00
6 8 10 12 14 16 18
Input Voltage (V)
Quiescent Current (µA)
VOUT = 5.0V
IOUT = 0 µA
+25°C
+130°C -4C
C
+90°C
0
20
40
60
80
100
120
0 40 80 120 160 200
Load Current (mA)
GND Current (µA)
VOUT = 1.2V
VIN = 2.7V
0
20
40
60
80
100
120
0 50 100 150 200 250
Load Current (mA)
GND Current (µA)
VOUT = 5.0V
VIN = 6.0V
VOUT = 2.5V
VIN = 3.5V
0.00
0.50
1.00
1.50
2.00
2.50
3.00
-45 -20 5 30 55 80 105 130
Junction Temperature (°C)
Quiescent Current (µA)
IOUT = 0 mA
VOUT = 5.0V
VIN = 6.0V
VOUT = 1.2V
VIN = 2.7V
VOUT = 2.5V
VIN = 3.5V
§ W
MCP1703
DS22049F-page 6 © 2011 Microchip Technology Inc.
Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater.
FIGURE 2-7: Output Voltage vs. Input
Voltage.
FIGURE 2-8: Output Voltage vs. Input
Voltage.
FIGURE 2-9: Output Voltage vs. Input
Voltage.
FIGURE 2-10: Output Voltage vs. Load
Current.
FIGURE 2-11: Output Voltage vs. Load
Current.
FIGURE 2-12: Output Voltage vs. Load
Current.
1.180
1.190
1.200
1.210
1.220
1.230
1.240
2 4 6 8 10 12 14 16 18
Input Voltage (V)
Output Voltage (V)
VOUT = 1.2V
ILOAD = 0.1 mA
+25°C
+130°C
-45°C
0°C
+90°C
2.44
2.46
2.48
2.50
2.52
2.54
2.56
2.58
24681012141618
Input Voltage (V)
Output Voltage (V)
VOUT = 2.5V
ILOAD = 0.1 mA
+25°C
+130°C
-45°C0°C
+90°C
4.88
4.92
4.96
5.00
5.04
5.08
5.12
5.16
6 8 10 12 14 16 18
Input Voltage (V)
Output Voltage (V)
VOUT = 5.0V
ILOAD = 0.1 mA
+25°C
+130°C
-45°C
0°C
+90°C
1.18
1.19
1.20
1.21
1.22
1.23
1.24
0 20 40 60 80 100 120 140 160 180 200
Load Current (mA)
Output Voltage (V)
VIN = 3.0V
VOUT = 1.2V
+25°C
+130°C
-45°C 0°C
+90°C
2.46
2.47
2.48
2.49
2.50
2.51
2.52
2.53
2.54
0 50 100 150 200 250
Load Current (mA)
Output Voltage (V)
VIN = 3.5V
VOUT = 2.5V
+25°C
+130°C
-45°C
0°C
+90°C
4.92
4.94
4.96
4.98
5.00
5.02
5.04
5.06
0 50 100 150 200 250
Load Current (mA)
Output Voltage (V)
VIN = 6V
VOUT = 5.0V
+25°C
+130°C
-45°C
0°C
+90°C
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© 2011 Microchip Technology Inc. DS22049F-page 7
MCP1703
Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater.
FIGURE 2-13: Dropout Voltage vs. Load
Current.
FIGURE 2-14: Dropout Voltage vs. Load
Current.
FIGURE 2-15: Dynamic Line Response.
FIGURE 2-16: Dynamic Line Response.
FIGURE 2-17: Short Circuit Current vs.
Input Voltage.
FIGURE 2-18: Load Regulation vs.
Temperature.
0.00
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
0 25 50 75 100 125 150 175 200 225 250
Load Current (mA)
Dropout Voltage (V)
VOUT = 2.5V
+25°C
+130°C
+0°C
-45°C
+90°C
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0 25 50 75 100 125 150 175 200 225 250
Load Current (mA)
Dropout Voltage (V)
VOUT = 5.0V
+25°C
+130°C
+0°C
-45°C
+90°C
0
100
200
300
400
500
600
700
800
900
24681012141618
Input Voltage (V)
Short Circuit Current (mA)
VOUT = 2.5V
ROUT < 0.1?
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
-45 -20 5 30 55 80 105 130
Temperature (°C)
Load Regulation (%)
VOUT = 1.2V
IOUT = 1 mA to 200 mA
VIN = 3.8V
VIN = 14V
VIN = 16V
VIN = 12V
VIN = 6V
VIN = 3.2V
MCP1703
DS22049F-page 8 © 2011 Microchip Technology Inc.
Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater.
FIGURE 2-19: Load Regulation vs.
Temperature.
FIGURE 2-20: Load Regulation vs.
Temperature.
FIGURE 2-21: Line Regulation vs.
Temperature.
FIGURE 2-22: Line Regulation vs.
Temperature.
FIGURE 2-23: Line Regulation vs.
Temperature.
FIGURE 2-24: PSRR vs. Frequency.
-0.40
-0.20
0.00
0.20
0.40
0.60
0.80
1.00
1.20
-45 -20 5 30 55 80 105 130
Temperature (°C)
Load Regulation (%)
VOUT = 2.5V
IOUT = 1 mA to 250 mA
VIN = 3.5V
VIN = 14V
VIN = 12V
VIN = 6V
VIN = 16V
-0.40
-0.20
0.00
0.20
0.40
0.60
0.80
1.00
-45-20 5 305580105130
Temperature (°C)
Load Regulation (%)
VOUT = 5.0V
IOUT = 1 to 250 mA
VIN = 6V
VIN = 14V
VIN = 12V
VIN = 8V
VIN = 16V
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
-45 -20 5 30 55 80 105 130
Temperature (°C)
Line Regulation (%/V)
VIN = 3.0 to 16.0V
VOUT = 1.2V
1 mA
100 mA
0 mA
200 mA
0.00
0.04
0.08
0.12
0.16
0.20
-45 -20 5 30 55 80 105 130
Temperature (°C)
Line Regulation (%/V)
VOUT = 2.5V
VIN = 3.5V to 16V
200 mA
100 mA
0 mA
250 mA
0.06
0.08
0.10
0.12
0.14
0.16
0.18
-45 -20 5 30 55 80 105 130
Temperature (°C)
Line Regulation (%/V)
VOUT = 5.0V
VIN = 6.0V to 16.0V
200mA
100 mA
0 mA
250 mA
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
0.01 0.1 1 10 100 1000
Frequency (kHz)
PSRR (dB)
VR=1.2V
VIN=2.7V
VINAC = 100 mV p-p
CIN=0 μF
IOUT=100 µA
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© 2011 Microchip Technology Inc. DS22049F-page 9
MCP1703
Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater.
FIGURE 2-25: PSRR vs. Frequency.
FIGURE 2-26: Output Noise vs. Frequency.
FIGURE 2-27: Power Up Timing.
FIGURE 2-28: Dynamic Load Response.
FIGURE 2-29: Dynamic Load Response.
FIGURE 2-30: Output Voltage vs. Input
Voltage.
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
0.01 0.1 1 10 100 1000
Frequency (KHz)
PSRR (dB)
VR=5.0V
VIN=6.0V
VINAC = 100 mV p-p
CIN=0 μF
IOUT=100 µA
0.001
0.01
0.1
1
10
100
0.01 0.1 1 10 100 1000
Frequency (kHz)
Noise (µV/ Hz)
VR=5.0V, VIN=6.0V IOUT=50 mA
VR=2.8V, VIN=3.8V
VR=1.2V, VIN=2.7V
0.0
1.0
2.0
3.0
4.0
0.01.02.03.04.0
Input Voltage (V)
Output Voltage (V)
RLOAD=10 k
VR = 2.5V
MCP1703
DS22049F-page 10 © 2011 Microchip Technology Inc.
FIGURE 2-31: Output Voltage vs. Input
Voltage.
0.0
1.0
2.0
3.0
4.0
0.01.02.03.04.0
Input Voltage (V)
Output Voltage (V)
VR = 3.3V
ILOAD = 1 mA ILOAD = 44 µA
© 2011 Microchip Technology Inc. DS22049F-page 11
MCP1703
3.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1: MCP1703 PIN FUNCTION TABLE
3.1 Ground Terminal (GND)
Regulator ground. Tie GND to the negative side of the
output and the negative side of the input capacitor.
Only the LDO bias current (2.0 µA typical) flows out of
this pin; there is no high current. The LDO output
regulation is referenced to this pin. Minimize voltage
drops between this pin and the negative side of the
load.
3.2 Regulated Output Voltage (VOUT)
Connect VOUT to the positive side of the load and the
positive terminal of the output capacitor. The positive
side of the output capacitor should be physically
located as close to the LDO VOUT pin as is practical.
The current flowing out of this pin is equal to the DC
load current.
3.3 Unregulated Input Voltage (VIN)
Connect VIN to the input unregulated source voltage.
Like all low dropout linear regulators, low source
impedance is necessary for the stable operation of the
LDO. The amount of capacitance required to ensure
low source impedance will depend on the proximity of
the input source capacitors or battery type. For most
applications, 1 µF of capacitance will ensure stable
operation of the LDO circuit. For applications that have
load currents below 100 mA, the input capacitance
requirement can be lowered. The type of capacitor
used can be ceramic, tantalum, or aluminum
electrolytic. The low ESR characteristics of the ceramic
will yield better noise and PSRR performance at
high-frequency.
3.4 Exposed Thermal Pad (EP)
There is an internal electrical connection between the
Exposed Thermal Pad (EP) and the VSS pin; they must
be connected to the same potential on the Printed
Circuit Board (PCB).
Pin No.
2x3 DFN-8
Pin No.
SOT-223-3
Pin No.
SOT-23A
Pin No.
SOT-89-3 Name Function
4 2,Tab 1 1 GND Ground Terminal
1323V
OUT Regulated Voltage Output
8132,TabV
IN Unregulated Supply Voltage
2, 3, 5, 6, 7 NC No Connection
9 EP Exposed Thermal Pad (EP); must be
connected to VSS
MCP1703
DS22049F-page 12 © 2011 Microchip Technology Inc.
4.0 DETAILED DESCRIPTION
4.1 Output Regulation
A portion of the LDO output voltage is fed back to the
internal error amplifier and compared with the precision
internal band gap reference. The error amplifier output
will adjust the amount of current that flows through the
P-Channel pass transistor, thus regulating the output
voltage to the desired value. Any changes in input
voltage or output current will cause the error amplifier
to respond and adjust the output voltage to the target
voltage (refer to Figure 4-1).
4.2 Overcurrent
The MCP1703 internal circuitry monitors the amount of
current flowing through the P-Channel pass transistor.
In the event of a short-circuit or excessive output
current, the MCP1703 will turn off the P-Channel
device for a short period, after which the LDO will
attempt to restart. If the excessive current remains, the
cycle will repeat itself.
4.3 Overtemperature
The internal power dissipation within the LDO is a
function of input-to-output voltage differential and load
current. If the power dissipation within the LDO is
excessive, the internal junction temperature will rise
above the typical shutdown threshold of 150°C. At that
point, the LDO will shut down and begin to cool to the
typical turn-on junction temperature of 130°C. If the
power dissipation is low enough, the device will
continue to cool and operate normally. If the power
dissipation remains high, the thermal shutdown
protection circuitry will again turn off the LDO,
protecting it from catastrophic failure.
FIGURE 4-1: Block Diagram.
+
-
MCP1703
VIN VOUT
GND
+VIN
Error Amplifier
Voltage
Reference
Overcurrent
Overtemperature
© 2011 Microchip Technology Inc. DS22049F-page 13
MCP1703
5.0 FUNCTIONAL DESCRIPTION
The MCP1703 CMOS low dropout linear regulator is
intended for applications that need the lowest current
consumption while maintaining output voltage
regulation. The operating continuous load range of the
MCP1703 is from 0 mA to 250 mA (VR 2.5V). The
input operating voltage range is from 2.7V to 16.0V,
making it capable of operating from two or more
alkaline cells or single and multiple Li-Ion cell batteries.
5.1 Input
The input of the MCP1703 is connected to the source
of the P-Channel PMOS pass transistor. As with all
LDO circuits, a relatively low source impedance (10Ω)
is needed to prevent the input impedance from causing
the LDO to become unstable. The size and type of the
capacitor needed depends heavily on the input source
type (battery, power supply) and the output current
range of the application. For most applications (up to
100 mA), a 1 µF ceramic capacitor will be sufficient to
ensure circuit stability. Larger values can be used to
improve circuit AC performance.
5.2 Output
The maximum rated continuous output current for the
MCP1703 is 250 mA (VR 2.5V). For applications
where VR < 2.5V, the maximum output current is
200 mA.
A minimum output capacitance of 1.0 µF is required for
small signal stability in applications that have up to
250 mA output current capability. The capacitor type
can be ceramic, tantalum, or aluminum electrolytic. The
Equivalent Series Resistance (ESR) range on the
output capacitor can range from 0Ω to 2.0Ω.
The output capacitor range for ceramic capacitors is
1 µF to 22 µF. Higher output capacitance values may
be used for tantalum and electrolytic capacitors. Higher
output capacitor values pull the pole of the LDO
transfer function inward that results in higher phase
shifts which in turn cause a lower crossover frequency.
The circuit designer should verify the stability by
applying line step and load step testing to their system
when using capacitance values greater than 22 µF.
5.3 Output Rise Time
When powering up the internal reference output, the
typical output rise time of 1000 µs is controlled to
prevent overshoot of the output voltage.
MCP1703
DS22049F-page 14 © 2011 Microchip Technology Inc.
6.0 APPLICATION CIRCUITS &
ISSUES
6.1 Typical Application
The MCP1703 is most commonly used as a voltage
regulator. Its low quiescent current and low dropout
voltage make it ideal for many battery-powered
applications.
FIGURE 6-1: Typical Application Circuit.
6.1.1 APPLICATION INPUT CONDITIONS
6.2 Power Calculations
6.2.1 POWER DISSIPATION
The internal power dissipation of the MCP1703 is a
function of input voltage, output voltage and output
current. The power dissipation, as a result of the
quiescent current draw, is so low, it is insignificant
(2.0 µA x VIN). The following equation can be used to
calculate the internal power dissipation of the LDO.
EQUATION 6-1:
The maximum continuous operating junction
temperature specified for the MCP1703 is +125°C. To
estimate the internal junction temperature of the
MCP1703, the total internal power dissipation is
multiplied by the thermal resistance from junction to
ambient (RθJA). The thermal resistance from junction to
ambient for the SOT-23A pin package is estimated at
336°C/W.
EQUATION 6-2:
The maximum power dissipation capability for a
package can be calculated given the junction-to-
ambient thermal resistance and the maximum ambient
temperature for the application. The following equation
can be used to determine the package maximum
internal power dissipation.
EQUATION 6-3:
EQUATION 6-4:
EQUATION 6-5:
Package Type = SOT-23A
Input Voltage Range = 2.7V to 4.8V
VIN maximum = 4.8V
VOUT typical = 1.8V
IOUT = 50 mA maximum
MCP1703
GND
VOUT
VIN CIN
F Ceramic
COUT
F Ceramic
VOUT
VIN
2.7V to 4.8V
1.8V
IOUT
50 mA
PLDO VIN MAX)()
VOUT MIN()
()IOUT MAX)()
×=
Where:
PLDO = LDO Pass device internal power
dissipation
VIN(MAX) = Maximum input voltage
VOUT(MIN) = LDO minimum output voltage
TJMAX()
PTOTAL RθJA
×TAMAX
+=
Where:
TJ(MAX) = Maximum continuous junction
temperature
PTOTAL = Total device power dissipation
RθJA = Thermal resistance from
junction-to-ambient
TAMAX = Maximum ambient temperature
PDMAX()
TJMAX()
TAMAX()
()
RθJA
---------------------------------------------------=
Where:
PD(MAX) = Maximum device power dissipation
TJ(MAX) = Maximum continuous junction
temperature
TA(MAX) = Maximum ambient temperature
RθJA = Thermal resistance from
junction-to-ambient
TJRISE()
PDMAX()
RθJA
×=
Where:
TJ(RISE) = Rise in device junction temperature
over the ambient temperature
PTOTAL = Maximum device power dissipation
RθJA = Thermal resistance from junction to
ambient
TJTJRISE()
TA
+=
Where:
TJ= Junction temperature
TJ(RISE) = Rise in device junction temperature
over the ambient temperature
TA= Ambient temperature
5
© 2011 Microchip Technology Inc. DS22049F-page 15
MCP1703
6.3 Voltage Regulator
Internal power dissipation, junction temperature rise,
junction temperature and maximum power dissipation
are calculated in the following example. The power
dissipation, as a result of ground current, is small
enough to be neglected.
6.3.1 POWER DISSIPATION EXAMPLE
Device Junction Temperature Rise
The internal junction temperature rise is a function of
internal power dissipation and the thermal resistance
from junction to ambient for the application. The
thermal resistance from junction to ambient (RθJA) is
derived from an EIA/JEDEC standard for measuring
thermal resistance for small surface mount packages.
The EIA/JEDEC specification is JESD51-7, “High
Effective Thermal Conductivity Test Board for Leaded
Surface Mount Packages”. The standard describes the
test method and board specifications for measuring the
thermal resistance from junction to ambient. The actual
thermal resistance for a particular application can vary
depending on many factors, such as copper area and
thickness. Refer to AN792, “A Method to Determine
How Much Power a SOT23 Can Dissipate in an
Application”, (DS00792), for more information
regarding this subject.
Junction Temperature Estimate
To estimate the internal junction temperature, the
calculated temperature rise is added to the ambient or
offset temperature. For this example, the worst-case
junction temperature is estimated below.
Maximum Package Power Dissipation at +40°C
Ambient Temperature Assuming Minimal Copper
Usage.
6.4 Voltage Reference
The MCP1703 can be used not only as a regulator, but
also as a low quiescent current voltage reference. In
many microcontroller applications, the initial accuracy
of the reference can be calibrated using production test
equipment or by using a ratio measurement. When the
initial accuracy is calibrated, the thermal stability and
line regulation tolerance are the only errors introduced
by the MCP1703 LDO. The low-cost, low quiescent
current and small ceramic output capacitor are all
advantages when using the MCP1703 as a voltage
reference.
FIGURE 6-2: Using the MCP1703 as a
Voltage Reference.
Package
Package Type: SOT-23A
Input Voltage:
VIN = 2.7V to 4.8V
LDO Output Voltages and Currents
VOUT = 1.8V
IOUT =50mA
Maximum Ambient Temperature
TA(MAX) = +40°C
Internal Power Dissipation
Internal Power dissipation is the product of the LDO
output current times the voltage across the LDO
(VIN to VOUT).
PLDO(MAX) =(V
IN(MAX) - VOUT(MIN)) x IOUT(MAX)
PLDO = (4.8V - (0.97 x 1.8V)) x 50 mA
PLDO = 152.7 milli-Watts
TJ(RISE) =P
TOTAL x RqJA
TJRISE = 152.7 milli-Watts x 336.0°C/Watt
TJRISE =51.3°C
TJ =T
JRISE + TA(MAX)
TJ =91.3°C
SOT-23A (336.0°C/Watt = RθJA)
PD(MAX) = (+125°C - 40°C) / 336°C/W
PD(MAX) = 253 milli-Watts
SOT-89 (153.3°C/Watt = RθJA)
PD(MAX) = (+125°C - 40°C) / 153.3°C/W
PD(MAX) = 0.554 Watts
SOT-223 (62.9°C/Watt = RθJA)
PD(MAX) = (+125°C - 40°C) / 62.9°C/W
PD(MAX) = 1.35 Watts
PIC®
MCP1703
GND
VIN
CIN
F COUT
F
Bridge Sensor
VOUT VREF
ADO
AD1
Ratio Metric Reference
2 µA Bias Microcontroller
MCP1703
DS22049F-page 16 © 2011 Microchip Technology Inc.
6.5 Pulsed Load Applications
For some applications, there are pulsed load current
events that may exceed the specified 250 mA
maximum specification of the MCP1703. The internal
current limit of the MCP1703 will prevent high peak
load demands from causing non-recoverable damage.
The 250 mA rating is a maximum average continuous
rating. As long as the average current does not exceed
250 mA, pulsed higher load currents can be applied to
the MCP1703. The typical current limit for the
MCP1703 is 500 mA (TA +25°C).
UUU UUU LIIJ U ’3‘ LIU U NNN
© 2011 Microchip Technology Inc. DS22049F-page 17
MCP1703
7.0 PACKAGING INFORMATION
7.1 Package Marking Information
3-Pin SOT-23A
XXNN
Standard Options for SOT-23A and SOT-89
Extended Temp
Symbol Voltage * Symbol Voltage *
HM 1.2 HT 3.0
HP 1.5 HU 3.3
HQ 1.8 HV 4.0
HR 2.5 HW 5.0
HS 2.8
* Custom output voltages available upon request. Contact
your local Microchip sales office for more information.
Example:
HWNN
Legend: XX...X Customer-specific information
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
*This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
3
e
3
e
Standard Options for SOT-223
Extended Temp
Symbol Voltage * Symbol Voltage *
121.2303.0
151.5333.3
181.8404.0
252.5505.0
28 2.8
Custom
33 3.3
* Custom output voltages available upon request. Contact
your local Microchip sales office for more information.
3-Lead SOT-89
XXXYYWW
NNN
Example:
HM1014
256
Tab is GND
1 32
XXXXXXX
NNN
3-Lead SOT-223
Tab is GND
Example:
XXXYYWW
MCP1703
256
15E1014
8-Lead DFN (2 x 3)
XXX
YWW
NN
Example:
AAU
014
25
Standard Options for 8-Lead DFN (2 x 3)
Extended Temp
Symbol Voltage * Symbol Voltage *
AAU 1.2 AAY 3.3
AAV 1.8 AFR 4.0
AAW 2.5 AAZ 5.0
AAT 3.0
* Custom output voltages available upon request. Contact
your local Microchip sales office for more information.
MCP1703
DS22049F-page 18 © 2011 Microchip Technology Inc.
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3-Lead Plastic Small Outline Transistor (CB) [SOT-23A] X I 7 7 I y 2 C G | | | —— E <— stlk="" screen="" recommended="" land="" pattern="" unlls="" mtllimeters="" dtmenston="" ltmtts="" mtn="" \="" nom="" |="" max="" contact="" phch="" e="" u="" 95="" 550="" contact="" pad="" spaclng="" c="" 2="" 70="" contact="" pad="" wtdtn="" (x3)="" x="" o="" 60="" contact="" pad="" length="" (x3)="" v="" 1="" 00="" dtstance="" between="" pads="" (3="" 1="" 70="" overalt="" wow="" 2="" 3="" 7o="" notes="" i="" dtmensicnmg="" and="" ioleranctng="" per="" asme="" ym="" 5m="" esc.="" bastc="" dtmensian="" theoretical‘y="" exact="" vatue="" shown="" wt|houl="" ioleranoes.="" mtcrocnip="" tecnnotogy="" drawing="" no="" (30472130a="">
© 2011 Microchip Technology Inc. DS22049F-page 19
MCP1703
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
MCP1703
DS22049F-page 20 © 2011 Microchip Technology Inc.
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3-Lead Plastic Small Outline Transistor Header (MB) [SOT-89] K v2 \J 45" ‘ 5le TYP SCREEN W I J X2 L X1 X1 if E +« E A RECOMMENDED LAND PATTERN Unils MILLIMETERS Dimensmn leils MlN l NOM l MAX Camaol Pilch E 1.50 asc Camaol Pads l a a Widlh x1 0.43 Canlact Pad 2 WW x2 0.56 Heal Slug Pad wlom x3 1 20 Cunlact Pads ’l & 3 Lenglh Y1 l 40 Cunlact 2 Fad Lenglh Y2 4 25 - K 2 60 2 55 Notes 1. Dlmenslonlrlg and toleranclng per ASME Y14.5M BSC: 83le Dlmension. Theoretically exaol value snown without tolerances. Mlcmchlp Technology Drawing No GOA-2029A
© 2011 Microchip Technology Inc. DS22049F-page 21
MCP1703
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
MCP1703
DS22049F-page 22 © 2011 Microchip Technology Inc.
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© 2011 Microchip Technology Inc. DS22049F-page 23
MCP1703
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© 2011 Microchip Technology Inc. DS22049F-page 25
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DS22049F-page 26 © 2011 Microchip Technology Inc.
NOTES:
© 2011 Microchip Technology Inc. DS22049F-page 27
MCP1703
APPENDIX A: REVISION HISTORY
Revision F (February 2011)
The following is the list of modifications:
1. Added a new line to Output Voltage Regulation
in the DC Characteristics table.
2. Added Figure 2-30 and Figure 2-31.
3. Added a new line to the Tolerance field in the
Product Identification System section.
4. Added a new custom part to the Standard
Options for SOT-223 table in the Package
Marking Information section.
Revision E (November 2010)
The following is the list of modifications:
1. Updated the Thermal Resistance Typical value
for the SOT-89 package in the Junction
Temperature Estimate section.
Revision D (September 2009)
The following is the list of modifications:
1. Added the 8-Lead 2x3 DFN package.
2. Updated the Temperature Specification table.
3. Updated Table 3-1.
4. Added Section 3.4 “Exposed Thermal Pad
(EP)”.
5. Updated the Package Outline Drawings and the
information for the 8-Lead 2x3 DFN package.
6. Added the information for the 8-Lead 2x3 DFN
package in the Product Identification System
section.
Revision C (June 2009)
The following is the list of modifications:
1. Absolute Maximum Ratings: Updated this
section.
2. DC Characteristics table: Updated.
3. Temperature Specifications table: Updated.
4. Package Information: Update Package Outline
Drawings.
Revision B (February 2008)
The following is the list of modifications:
1. Updated Temperature Specifications table.
2. Updated Table 3-1.
3. Updated Section 5.2 “Output”.
4. Added SOT-223 Landing Pattern Outline
drawing.
Revision A (June 2007)
Original Release of this Document.
MCP1703
DS22049F-page 28 © 2011 Microchip Technology Inc.
NOTES:
PART No. v x- 44x 44x
© 2011 Microchip Technology Inc. DS22049F-page 29
MCP1703
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
Device: MCP1703: 250 mA, 16V Low Quiescent Current LDO
Tape and Reel: T = Tape and Reel
Output Voltage *: 12 = 1.2V “Standard”
15 = 1.5V “Standard
18 = 1.8V “Standard
25 = 2.5V “Standard
28 = 2.8V “Standard
30 = 3.0V “Standard
33 = 3.3V “Standard
40 = 4.0V “Standard
50 = 5.0V “Standard
*Contact factory for other output voltage options.
Extra Feature
Code:
0 = Fixed
Tolerance: 1 = 1.0% (Custom)
2 = 2.0% (Standard)
Temperature: E= -40°C to +125°C
Package Type: CB = Plastic Small Outline Transistor (SOT-23A) 3-lead,
DB = Plastic Small Outline Transistor (SOT-223) 3-lead,
MB = Plastic Small Outline Transistor (SOT-89) 3-lead.
MC = Plastic Dual Flat, No Lead Package (DFN) 2x3, 8-lead.
PART NO. XXX
Output Feature
Code
Device
Voltage
X
Tolerance
X/
Temp.
XX
Package
X-
Tape
and Reel
Examples:
a) MCP1703T-1202E/XX: 1.2V Low Quiescent
LDO, Tape and Reel
b) MCP1703T-1502E/XX: 1.5V Low Quiescent
LDO, Tape and Reel
c) MCP1703T-1802E/XX: 1.8V Low Quiescent
LDO, Tape and Reel
d) MCP1703T-2502E/XX: 2.5V Low Quiescent
LDO, Tape and Reel
e) MCP1703T-2802E/XX: 2.8V Low Quiescent
LDO, Tape and Reel
f) MCP1703T-3002E/XX: 3.0V Low Quiescent
LDO, Tape and Reel
g) MCP1703T-3302E/XX: 3.3V Low Quiescent
LDO, Tape and Reel
h) MCP1703T-3602E/XX: 3.6V Low Quiescent
LDO, Tape and Reel
i) MCP1703T-4002E/XX: 4.0V Low Quiescent
LDO, Tape and Reel
j) MCP1703T-5002E/XX: 5.0V Low Quiescent
LDO, Tape and Reel
XX = CB for 3LD SOT-23A package
= DB for 3LD SOT-223 package
= MB for 3LD SOT-89 package
= MC for 8LD DFN package.
MCP1703
DS22049F-page 30 © 2011 Microchip Technology Inc.
NOTES:
QUALITY MANAGEMENT SYSTEM CERTIFIED BY DNV = ISO/TS 16949:2002 =
© 2011 Microchip Technology Inc. DS22049F-page 31
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART,
PIC32 logo, rfPIC and UNI/O are registered trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MXDEV, MXLAB, SEEVAL and The Embedded Control
Solutions Company are registered trademarks of Microchip
Technology Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, CodeGuard,
dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial
Programming, ICSP, Mindi, MiWi, MPASM, MPLAB Certified
logo, MPLIB, MPLINK, mTouch, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, REAL ICE, rfLAB, Select Mode, Total Endurance,
TSHARC, UniWinDriver, WiperLock and ZENA are
trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2011, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 978-1-60932-941-9
Note the following details of the code protection feature on Microchip devices:
Microchip products meet the specification contained in their particular Microchip Data Sheet.
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Microchip received ISO/TS-16949:2002 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
’3‘ MICRDCHIP AMERICAS ASIA/PACIFIC ASIA/PACIFIC EUROPE
DS22049F-page 32 © 2011 Microchip Technology Inc.
AMERICAS
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02/18/11

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