Si1070X Datasheet by Vishay Siliconix

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Vishay Siliconix
Si1070X
Document Number: 73893
S10-2542-Rev. D, 08-Nov-10
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1
N-Channel 30 V (D-S) MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
•TrenchFET
® Power MOSFET
100 % Rg and UIS Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Load Switch for Portable Devices
PRODUCT SUMMARY
VDS (V) RDS(on) ()I
D (A) Qg (Typ.)
30 0.099 at VGS = 4.5 V 1.2a
3.5
0.140 at VGS = 2.5 V 1.0
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 650 °C/W.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ± 12
Continuous Drain Current (TJ = 150 °C)aTA = 25 °C ID
1.2b, c
A
TA = 70 °C 1b, c
Pulsed Drain Current IDM 6
Avalanche Current L = 0.1 mH IAS 9
Repetitive Avalanche Energy EAS 4.01 mJ
Continuous Source-Drain Diode Current TA = 25 °C IS0.2b, c A
Maximum Power Dissipationa
TA = 25 °C PD
0.236b, c
W
TA = 70 °C 0.151b, c
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientb, d t 5 s RthJA
440 530 °C/W
Steady State 540 650
Ordering Information: Si1070X-T1-GE3 (Lead (Pb)-free and Halogen-free)
Marking Code
U XX
Lot Traceability
and Date Code
Part # Code
Y
Y
SC-89 (6-LEADS)
6
4
1
2
3
5
Top View
D
D
G
D
D
S
(TJ — VISHAYD
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Document Number: 73893
S10-2542-Rev. D, 08-Nov-10
Vishay Siliconix
Si1070X
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 30 V
VDS Temperature Coefficient VDS/TJID = 250 µA 24.5 mV/°C
VGS(th) Temperature Coefficient VGS(th)/TJ- 3.81
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.7 1.55 V
Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 30 V, VGS = 0 V 1nA
VDS = 30 V, VGS = 0 V, TJ = 85 °C 10 µA
On-State Drain CurrentaID(on) VDS = 5 V, VGS = 4.5 V 6 A
Drain-Source On-State ResistanceaRDS(on)
VGS = 4.5 V, ID = 1.2 A 0.082 0.099
VGS = 2.5 V, ID = 1.0 A 0.116 0.140
Forward Transconductance gfs VDS = 15 V, ID = 1.2 A 5S
Dynamicb
Input Capacitance Ciss
VDS = 15 V, VGS = 0 V, f = 1 MHz
385
pFOutput Capacitance Coss 55
Reverse Transfer Capacitance Crss 30
Total Gate Charge Qg VDS = 15 V, VGS = 5 V, ID = 1.2 A 3.8 8.3
nC
VDS = 15 V, VGS = 4.5 V, ID = 4.6 A
3.5 4.1
Gate-Source Charge Qgs 1.1
Gate-Drain Charge Qgd 0.98
Gate Resistance Rgf = 1 MHz 4.7 6.2
Tur n - O n D e l ay Time td(on)
VDD = 15 V, RL = 15
ID 1.0 A, VGEN = 4.5 V, Rg = 1
10 15
ns
Rise Time tr22 33
Turn-Off DelayTime td(off) 14 21
Fall Time tf69
Drain-Source Body Diode Characteristics
Pulse Diode Forward CurrentaISM 6A
Body Diode Voltage VSD IS = 1.2 A 0.8 1.2 V
Body Diode Reverse Recovery Time trr
IF = 3.8 A, dI/dt = 100 A/µs
19.4 29.5 nC
Body Diode Reverse Recovery Charge Qrr 18.43 27.5
nsReverse Recovery Fall Time ta16.4
Reverse Recovery Rise Time tb3
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Document Number: 73893
S10-2542-Rev. D, 08-Nov-10
www.vishay.com
3
Vishay Siliconix
Si1070X
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
1
2
3
4
5
6
0.0 0.6 1.2 1.82.4
V
GS
= 5 V thru 3 V
VDS - Drain-to-Source Voltage (V)
)A( tnerruC niarD -I D
V
GS
= 2.5 V
V
GS
= 2 V
VGS = 1.5 V
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0123456
V
GS
= 4.5 V
e (Ω)cnats
i
s
e
R
-
nO
-
R
)
no(SD
ID - Drain Current (A)
V
GS
= 2.5 V
0
1
2
3
4
5
012345
I
D
= 1.2 A
)V( ega
tlo
V
e
cruo
S
-ot-etaG
-
Q
g
- Total Gate Charge (nC)
VGS
VGS = 24 V
V
DS
= 15 V
Transfer Characteristics Curves vs. Temp.
Capacitance
On-Resistance vs. Junction Temperature
0.0
0.6
1.2
1.8
2.4
3.0
0.0 0.6 1.2 1.82.4 3.0
25 °C
T
C
= 125 °C
- 55 °C
VGS - Gate-to-Source Voltage (V)
)A( tnerruC niarD -I
D
T =
C T =
C
0
100
200
300
400
500
0 6 12 1824 30
C
rss
C
oss
C
iss
VDS - Drain-to-Source Voltage (V)
)Fp( ecn
a
tica
pa
C
-
C
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 4.5 V
I
D
= 1.2 A
TJ- Junction Temperature (°C)
)
d
ezi
l
a
m
ro
N(
cenatsi
s
eR-nO
-R
)no(SD
V
GS
= 2.5 V
I
D
= 1 A
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Document Number: 73893
S10-2542-Rev. D, 08-Nov-10
Vishay Siliconix
Si1070X
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
0.001
0.01
0.1
1
10
0 0.2 0.4 0.6 0.81
VSD - Source-to-Drain Voltage (V)
)A( tnerruC ecruoS -I S
TJ = 150 °C
TJ = 25 °C
RDS(on) vs. VGS vs. Temperature
Single Pulse Power
0.00
0.06
0.12
0.18
0.24
012345
T
A
= 25 °C
e (Ω)cnatsiseR-nO -R )no(SD
GS - Gate-to-Source Voltage (V)
I
D
= 1.2 A
T
A
= 125 °C
V
) W (
r e w o P
Time (s)
0.0
1.0
2.0
3.0
4.0
5.0
0.01 0.1 1 10 100 1000
Safe Operating Area, Junction-to-Ambient
0.001
10
1
0.1 1 100
0.01
)
A
(tn
e
r
r
uCniarD-
ID
0.1
VDS - Drain-to-Source Voltage (V)
10
T
A
= 25 °C
Single Pulse
Limited by RDS(on)*
BVDSS Limited
100 ms
DC
1 s
10 s
10 ms
1 ms
100 µs
* VGS > minimum VGS at which RDS(on) is specified
VISHAYm www vrshay com/gag 773393
Document Number: 73893
S10-2542-Rev. D, 08-Nov-10
www.vishay.com
5
Vishay Siliconix
Si1070X
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73893.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3 10
-2 1 10 100 100010
-1
10
-4
Square Wave Pulse Duration (s)
t n e i s n a r T e v i t c e f f E d e z i l a m r o N
e c n a d e p m I l a m r e h T
10
-4
10
-3
10
-2
10
-1
1
Single Pulse
0.02
0.05
0.1
0.2
Duty Cycle = 0.5
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 540 ° C/W
3. T
JM
- T
A = PDMZthJA(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
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Package Information
www.vishay.com Vishay Siliconix
Revision: 11-Aug-14 1Document Number: 71612
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SC-89 6-Leads (SOT-563F)
Notes
1. Dimensions in millimeters.
2. Dimension D does not include mold flash, protrusions or gate
burrs. Mold flush, protrusions or gate burrs shall not exceed
0.15 mm per dimension E1 does not include interlead flash
or protrusion, interlead flash or protrusion shall not exceed
0.15 mm per side.
3. Dimensions D and E1 are determined at the outmost extremes
of the plastic body exclusive of mold flash, the bar burrs, gate
burrs and interlead flash, but including any mismatch between
the top and the bottom of the plastic body.
4. Datums A, B and D to be determined 0.10 mm from the lead tip.
5. Terminal numbers are shown for reference only.
6. These dimensions apply to the flat section of the lead between
0.08 mm and 0.15 mm from the lead tip.
6
4
32
4
32
5
4
Caaa
C
M
ddd A–B D
2x
e
B6x b
Caaa
2x
D
E/2
E
Cbbb
2x
123
654
E1
E1/2
A
D
e1
L1
L
A
B
C
A1
A1
SECTION B-B
DETAIL “A”
SEE DETAIL “A”
DIM. MILLIMETERS
MIN. NOM. MAX.
A 0.56 0.58 0.60
A1 0 0.02 0.10
b 0.15 0.22 0.30
c 0.10 0.14 0.18
D 1.50 1.60 1.70
E 1.50 1.60 1.70
E1 1.15 1.20 1.25
e 0.45 0.50 0.55
e1 0.95 1.00 1.05
L 0.25 0.35 0.50
L1 0.10 0.20 0.30
C14-0439-Rev. C, 11-Aug-14
DWG: 5880
— VISHAY.. u use 11.753) m; com 21 Ducq'vve'n Vumbsr 72505 Re "2er 708
Application Note 826
Vishay Siliconix
Document Number: 72605 www.vishay.com
Revision: 21-Jan-08 21
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead
0.051
(1.300)
0.069
(1.753)
0.019
(0.478)
0.031
(0.798)
0.012
(0.300)
0.051
(0.201)
0.020
(0.500)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
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Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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