BSO201SP H Datasheet by Infineon Technologies

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@neon R HS «‘63 Halogen
BSO201SP H
OptiMOS® P-Power-Transistor
Features
• single P-Channel in SO8
• Qualified according JEDEC1) for target applications
• 150°C operating temperature
• Super Logic Level (2.5V rated)
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
10 secs steady state
Continuous drain current1) IDVGS=4.5 V, TA=25 °C 14.9 12.0 A
VGS=4.5 V, TA=70 °C 11.9 9.4
VGS=2.5 V, TA=25 °C 11.8 9.3
VGS=2.5 V, TA=70 °C 9.4 7.4
Pulsed drain current2) ID,pulse TA=25 °C
Avalanche energy, single pulse EAS ID=-14.9 A, RGS=25 mJ
Gate source voltage VGS V
Power dissipation1) Ptot TA=25 °C 2.5 1.6 W
Operating and storage temperature Tj, Tstg °C
ESD class JESD22-A114 HBM
Soldering temperature °C
IEC climatic category; DIN IEC 68-1
260
1C (< 2 kV)
55/150/56
±12
-55 ... 150
Value
59.6
248
Type Package Marking
BSO201SP H PG-DSO-8 201SP
PG-DSO-8
VDS -20 V
RDS(on),max VGS=4.5 V 8.0 m
VGS=2.5 V 12.9
ID-14.9 A
Product Summary
Lead free Packing
Yes dry
Halogen free
Yes
Rev.1.32 page 1 2009-12-21
@neon
BSO201SP H
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - soldering point RthJS - - 35 K/W
Thermal resistance,
junction - ambient RthJA
minimal footprint,
tp10 s - - 110
minimal footprint,
steady state - - 150
6 cm2 cooling area1),
tp10 s --50
6 cm2 cooling area1),
steady state --80
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS
VGS=0 V, ID= -
0.25 mA -20 - - V
Gate threshold voltage VGS(th) VDS=VGS, ID= -250 µA -0.6 -0.9 -1.2
Zero gate voltage drain current IDSS
VDS=-20 V, VGS=0 V,
Tj=25 °C - 0.1 1 µA
VDS=-20 V, VGS=0 V,
Tj=150 °C - 10 100
Gate-source leakage current IGSS VGS= -12 V, VDS=0 V - - -100 nA
Drain-source on-state resistance RDS(on) VGS=2.5 V, ID=-11.8 A - 10.3 12.9 m
VGS=4.5 V, ID=-14.9 A - 6.7 8.0
Gate resistance RG- 3.8 -
Transconductance gfs
|VDS|>2|ID|RDS(on)max,
ID=-11.8 A 40 71 - S
3) See figure 13 for more detailed information
Values
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2) See figure 3 for more detailed information
Rev.1.32 page 2 2009-12-21
@neon
BSO201SP H
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance Ciss - 6400 9600 pF
Output capacitance Coss - 2100 3150
Reverse transfer capacitance Crss - 1700 2550
Turn-on delay time td(on) -2132ns
Rise time tr- 99 149
Turn-off delay time td(off) - 99 149
Fall time tf- 162 243
Gate Char
g
e Characteristics4)
Gate to source charge Qgs - -10 -15 nC
Gate charge at threshold Qg(th) - -6 -16
Gate to drain charge Qgd - -23 -39
Switching charge Qsw - -26 -38
Gate charge total Qg- -66 -88
Gate plateau voltage Vplateau - -1.5 - V
Output charge Qoss VDD=-10 V, VGS=0 V -3851nC
Reverse Diode
Diode continuous forward current IS- - -3.7 A
Diode pulse current IS,pulse - - -59.6
Diode forward voltage VSD
VGS=0 V, IF=-14.9 A,
Tj=25 °C - - 1.2 V
Reverse recovery time trr
VR=10 V, IF=IS,
diF/dt=100 A/µs - - 95 ns
Reverse recovery charge Qrr
VR=10 V, IF=IS,
diF/dt=100 A/µs - - 109 nC
4) See figure 16 for gate charge parameter definition
TA=25 °C
Values
VGS=0 V, VDS=15 V,
f=1 MHz
VDD=-10 V,
VGS=4.5 V, ID=-
14.9 A, RG=1.6
VDD=-10 V, ID=-
14.9 A, VGS=0 to 4.5 V
Rev.1.32 page 3 2009-12-21
inf nnnnn
BSO201SP H
1 Power dissipation 2 Drain current
Ptot=f(TA); tp10 s ID=f(TA); tp10 s
parameter: VGS = 4.5 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TA=25 °C2); D=0 ZthJA=f(tp)2)
parameter: tpparameter: D=tp/T
100 µs
1 ms
10 ms
100 ms
10 s
102
101
100
10-1
102
101
100
10-1
VDS [V]
ID [A]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10-6 10-5 10-4 10-3 10-2 10-1 100101102
10-2
10-1
100
101
102
tp [s]
ZthJA [K/W]
0
0.5
1
1.5
2
2.5
3
0 40 80 120 160
TA [°C]
Ptot [W]
0
2
4
6
8
10
12
14
16
0 40 80 120 160
TA [°C]
- I D [A]
Rev.1.32 page 4 2009-12-21
@neon / / // / ,— // /l / ll / / / / / / /
BSO201SP H
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
parameter: Tj
2.0 V
2.2 V
2.5 V
3.0 V
4.5 V
10 V
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
0 102030405060
- I D [A]
RDS(on) [m]
0
5
10
15
20
25
30
35
0.0 0.5 1.0 1.5 2.0 2.5
- V GS [V]
- I D [A]
1.5 V
1.8 V
2.0V
2.5 V3.0V
0
10
20
30
40
50
60
70
80
90
01234
- V DS [V]
- I D [A]
4.5 V
0
20
40
60
80
100
120
0 5 10 15 20 25 30 35 40
ID [A]
gfs [S]
25°C
150 °C
Rev.1.32 page 5 2009-12-21
BSO201SP H
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID= -14.9 A; VGS= -4.5 V VGS(th)=f(Tj); VGS=VDS; ID= -250 µA
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD)
parameter: Tj
typ
98 %
5
6
7
8
9
10
11
12
-60 -20 20 60 100 140
Tj [°C]
RDS(on) [m]
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
-60 -20 20 60 100 140 180
Tj [°C]
VGS(th) [V]
Ciss
Coss
Crss
104
103
0 5 10 15 20
- V DS [V]
C [pF]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
102
101
100
10-1
0 0.5 1 1.5 2
VSD [V]
IF [A]
Rev.1.32 page 6 2009-12-21
@ineon // //
BSO201SP H
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 VGS=f(Qgate); ID=-14.9 A pulsed
parameter: Tj(start) parameter: VDD
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=0.25 mA
18
18.5
19
19.5
20
20.5
21
21.5
22
22.5
23
-60 -20 20 60 100 140 180
Tj [°C]
- V BR(DSS) [V]
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
25 °C
100 °C
125 °C
0.1
1
10
100
1 10 100 1000
tAV [µs]
- I AV [A]
4 V
10 V
16 V
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140
- Q gate [nC]
- V GS [V]
Rev.1.32 page 7 2009-12-21
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BSO201SP H
Package Outline
PG-DSO-8: Outline
Footprint
Dimensions in mm
Rev.1.32 page 8 2009-12-21
(ifineon
BSO201SP H
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev.1.32 page 9 2009-12-21

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