MMBT4401 Datasheet by Diodes Incorporated

View All Related Products | Download PDF Datasheet
DBDES ®, ® gl (I MMBT4401 10” Document Number 0530039 Rev 1772 www.diodss.cum
MMBT4401
Document Number: DS30039 Rev. 17 - 2
1 of 7
www.diodes.com
November 2013
© Diodes Incorporated
MMBT4401
40V NPN SMALL SIGNAL TRANSISTOR IN SOT23
Features
Epitaxial Planar Die Construction
Ideal for Medium Power Amplification and Switching
Complementary PNP Type: MMBT4403
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP capable (Note 4)
Mechanical Data
Case: SOT23
Case material: molded Plastic “Green” Compound
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.008 grams (Approximate)
Ordering Information
(Notes 4 & 5)
Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel
MMBT4401-7-F AEC-Q101 K2X 7 8 3,000
MMBT4401-13-F AEC-Q101 K2X 13 8 10,000
MMBT4401Q-13-F Automotive K2X 13 8 10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2010 2011 2012 2013 2014 2015 2016 2017
Code X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Top View
SOT23
Device Symbol
Top View
Pin-Out
K2X
YM
C
E
B
C
E
B
K2X = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: A = 2013)
M or M = Month (ex: 9 = September)
m5” MMBT4401 20” Document Number 0530039 Rev I772 www.diodss.cum
MMBT4401
Document Number: DS30039 Rev. 17 - 2
2 of 7
www.diodes.com
November 2013
© Diodes Incorporated
MMBT4401
Absolute Maximum Ratings (@TA = +25°C unless otherwise specified)
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6.0 V
Collector Current IC 600 mA
Peak Collector Current ICM 1 A
Peak Base Current IBM 200 mA
Thermal Characteristics (@TA = +25°C unless otherwise specified)
Characteristic Symbol Value Unit
Power Dissipation (Note 6) PD
310 mW
(Note 7) 350
Thermal Resistance, Junction to Ambient (Note 6) RθJA 403 C/W
(Note 7) 357
Thermal Resistance, Junction to Leads (Note 8) RθJL 350 C/W
Operating and Storage Temperature Range TJ,TSTG -55 to +150 C
ESD Ratings (Note 9)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM 400 V C
Notes: 6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
7. Same as note (6), except the device is mounted on 15 mm x 15mm 1oz copper.
8. Thermal resistance from junction to solder-point (at the end of the leads).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
M MBT440 1 3 o! 7 Document Number, 0530039 Rev 17 , 2 www.diodes.com
MMBT4401
Document Number: DS30039 Rev. 17 - 2
3 of 7
www.diodes.com
November 2013
© Diodes Incorporated
MMBT4401
Thermal Characteristics and Derating Information
0 255075100125150
0.0
0.1
0.2
0.3
0.4
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 1 10 100 1k
0
50
100
150
200
250
300
350
400
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal ResistanceC/W)
Pulse Width (s)
10m 100m 1 10 100 1k
0.1
1
10
Single Pulse. Tamb=25°C
Pulse Power Dissipation
Pulse Width (s)
Max Power Dissipation (W)
100m 1 10
1m
10m
100m
1
75µs
15mm x 15mm 1oz Copper Board
Single Pulse
Tamb=25°C
VCE(sat)
Limited
100µs
1ms
10ms
100ms
1s
DC
Safe Operating Area
-IC Collector Current (A)
-VCE Collector-Emitter Voltage (V)
m5” MMBT4401 40” Document Number 0530039 Rev I772 www.diodss.cum
MMBT4401
Document Number: DS30039 Rev. 17 - 2
4 of 7
www.diodes.com
November 2013
© Diodes Incorporated
MMBT4401
Electrical Characteristics (@TA = +25°C unless otherwise specified)
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage BVCBO 60 V IC = 100μA, IE = 0
Collector-Emitter Breakdown Voltage(Note 10) BVCEO 40 V IC = 10.0mA, IB = 0
Emitter-Base Breakdown Voltage BVEBO 6.0 V IE = 100μA, IC = 0
Collector Cutoff Current ICEX 100 nA
VCE = 35V, VEB
(
OFF
)
= 0.4V
Base Cutoff Current IBL 100 nA
VCE = 35V, VEB
(
OFF
)
= 0.4V
ON CHARACTERISTICS (Note 10)
DC Current Gain hFE
20
40
80
100
40
300
IC = 100µA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 150mA, VCE = 1.0V
IC = 500mA, VCE = 2.0V
Collector-Emitter Saturation Voltage VCE(sat) 0.40
0.75 V IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Base-Emitter Saturation Voltage VBE(sat) 0.75
0.95
1.2 V IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Ccb 6.5 pF
VCB = 5.0V, f = 1.0MHz, IE = 0
Input Capacitance Ceb 30 pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Input Impedance hie 1.0 15 k
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
Voltage Feedback Ratio hre 0.1 8.0 x 10-4
Small Signal Current Gain hfe 40 500
Output Admittance hoe 1.0 30 μS
Current Gain-Bandwidth Product fT 250 MHz VCE = 10V, IC = 20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time td 15 ns
VCC = 30V, IC = 150mA,
VBE(off) = 2.0V, IB1 = 15mA Rise Time t
r
20 ns
Storage Time ts 225 ns
VCC = 30V, IC = 150mA,
IB1 = -IB2 = 15mA Fall Time tf 30 ns
Note: 10. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%.
7 ~50 5525's ‘5u’c u: mEEEWKOB 00 v o hzmmmjo om n. 0256530 w<50>mmt72mi0+om Do 5 of 7 www.6iodes.com O ZO‘ZKDF INF—72W IézojnomnlE z z, w Documem Number 0330039 Rev 1772 MMBT440’I
MMBT4401
Document Number: DS30039 Rev. 17 - 2
5 of 7
www.diodes.com
November 2013
© Diodes Incorporated
MMBT4401
1
10
1,000
100
0.1 110 1,000
100
h, D
C
C
U
R
R
EN
T
G
AIN
FE
I , COLLECTOR CURRENT (mA)
Figure 1 Typical DC Current Gain vs. Collector Current
C
T = -25°C
A
T = +25°C
A
T = 125°C
A
V = 1.0V
CE
110
100 1,000
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SATURATION VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Figure 2 Collector-Emitter Saturation Voltage
vs. Collector Current
C
T = 25°C
A
T = -50°C
A
T = 150°C
A
0
0.1
0.2
0.3
0.4
0.5
I
I
C
B
= 10
10.1 10 100
V , BASE-EMI
T
T
E
R
T
U
R
N
-
O
N
V
O
L
T
A
G
E (V)
BE(ON)
I , COLLECTOR CURRENT (mA)
Figure 3 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
C
0.2
0.3
0.4
0.6
0.5
0.8
0.7
1.0
0.9
V = 5V
CE
T = 25°C
A
T = -50°C
A
T = 150°C
A
1
5
20
30
10
0.1 101.0 50
C
A
P
A
C
I
T
A
N
C
E (p
F
)
V , REVERSE VOLTAGE (V)
Figure 4 Typical Capacitance Characteristics
R
C
obo
100
C
ibo
1
10
100
1,000
110100
I , COLLECTOR CURRENT (mA)
Figure 5 Typical Gain Bandwidth Product vs. Collector Current
C
f,
G
AI
N
BA
N
DWID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
V = 5V
CE
0.001 0.01 110
0.1 100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I , BASE CURRENT (mA)
Figure 6 Typical Collector Saturation Region
B
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
V
O
L
T
A
G
E (V)
CE
I = 1mA
C
I = 10mA
C
I = 30mA
C
I = 100mA
C
I = 300mA
C
“lillf; ‘ \ 'AF‘fifi‘fiij c J ,,,,, ; ,,,,, L‘ i ‘ 7m 1 LJ 1.5—1 + __ + + + —— 4— —> —> MMBT440’I 5017 Document Number 0530039 Rev 1772 www.diodss.cum
MMBT4401
Document Number: DS30039 Rev. 17 - 2
6 of 7
www.diodes.com
November 2013
© Diodes Incorporated
MMBT4401
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.890 1.00 0.975
K1 0.903 1.10 1.025
L 0.45 0.61 0.55
L1 0.25 0.55 0.40
M 0.085 0.150 0.110
a
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
XE
Y
C
Z
m5” MMBT440’I 70H Document Number 0330039 Rev 1772 www.d‘ (135.com
MMBT4401
Document Number: DS30039 Rev. 17 - 2
7 of 7
www.diodes.com
November 2013
© Diodes Incorporated
MMBT4401
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
www.diodes.com

Products related to this Datasheet

TRANS NPN 40V 0.6A SMD SOT23-3
TRANS NPN 40V 0.6A SMD SOT23-3
TRANS NPN 40V 0.6A SMD SOT23-3
TRANS NPN 40V 0.6A SMD SOT23-3
TRANS NPN 40V 0.6A SMD SOT23-3
TRANS NPN 40V 600MA SOT23