Si1032R,X Datasheet by Vishay Siliconix

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— VISHAYw ccccccccc
Vishay Siliconix
Si1032R/X
Document Number: 71172
S10-2544-Rev. F, 08-Nov-10
www.vishay.com
1
N-Channel 1.5 V (G-S) MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
Low-Side Switching
Low On-Resistance: 5
Low Threshold: 0.9 V (typ.)
Fast Switching Speed: 35 ns
TrenchFET® Power MOSFETs: 1.5 V Rated
2000 V ESD Protection
Compliant to RoHS Directive 2002/95/EC
BENEFITS
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Low Battery Voltage Operation
APPLICATIONS
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories
Battery Operated Systems
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers
PRODUCT SUMMARY
VDS (V) RDS(on) ()I
D (mA)
20
5 at VGS = 4.5 V 200
7 at VGS = 2.5 V 175
9 at VGS = 1.8 V 150
10 at VGS = 1.5 V 50
Ordering Information:
Si1032R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free)
Si1032X-T1-GE3 (SC-89, Lead (Pb)-free -free Halogen-free)
Top View
2
1
S
D
G
3
Marking Code: G
SC-75A or SC-89
Notes:
a. Surface mounted on FR4 board.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Symbol
Si1032R Si1032X
Unit
5 s Steady State 5 s Steady State
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ± 6
Continuous Drain Current (TJ = 150 °C)aTA = 25 °C ID
200 140 210 200
mA
TA = 85 °C 110 100 150 140
Pulsed Drain Currenta IDM 500 600
Continuous Source Current (Diode Conduction)a IS250 200 300 240
Maximum Power Dissipationa for SC-75
TA = 25 °C PD
280 250 340 300 mW
TA = 85 °C 145 130 170 150
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V
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Document Number: 71172
S10-2544-Rev. F, 08-Nov-10
Vishay Siliconix
Si1032R/X
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
SPECIFICATIONS (TA = 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.40 0.7 1.2 V
Gate-Body Leakage IGSS
VDS = 0 V, VGS = ± 2.8 V ± 0.5 ± 1.0
µA
VDS = 0 V, VGS = ± 4.5 V ± 1.0 ± 3.0
Zero Gate Voltage Drain Current IDSS
VDS = 20 V, VGS = 0 V 1
VDS = 20 V, VGS = 0 V, TJ = 55 °C 10
On-State Drain CurrentaID(on) V
DS = 5 V, VGS = 4.5 V 250 mA
Drain-Source On-State ResistanceaRDS(on)
VGS = 4.5 V, ID = 200 mA 5
VGS = 2.5 V, ID = 175 mA 7
VGS = 1.8 V, ID = 150 mA 9
VGS = 1.5 V, ID = 40 mA 10
Forward Transconductanceagfs VDS = 10 V, ID = 200 mA 0.5 S
Diode Forward VoltageaVSD IS = 150 mA, VGS = 0 V 1.2 V
Dynamicb
Total Gate Charge Qg
VDS = 10 V, VGS = 4.5 V, ID = 250 mA
750
pCGate-Source Charge Qgs 75
Gate-Drain Charge Qgd 225
Tur n - O n D e l ay Time td(on)
VDD = 10 V, RL = 47
ID 200 mA, VGEN = 4.5 V, Rg = 10
50
ns
Rise Time tr 25
Turn-Off Delay Time td(off) 50
Fall Time tf 25
Output Characteristics
0.0
0.1
0.2
0.3
0.4
0.5
0123456
VDS - Drain-to-Source Voltage (V)
- Drain Current (A)
ID
VGS = 5 V thru 1.8 V
1 V
Transfer Characteristics
0
100
200
300
400
500
600
0.0 0.5 1.0 1.5 2.0 2.5
VGS - Gate-to-Source Voltage (V)
- Drain Current (mA)ID
TJ = - 55 °C
125 °C
25 °C
AOnARes‘scance (:2 // 125
Document Number: 71172
S10-2544-Rev. F, 08-Nov-10
www.vishay.com
3
Vishay Siliconix
Si1032R/X
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
On-Resistance vs. Drain Current
Gate Charge
Surge-Drain Diode Forward Voltage
- On-Resistance (Ω)RDS(on)
0
10
20
30
40
50
0 50 100 150 200 250
ID- Drain Current (mA)
VGS = 1.8 V
VGS = 4.5 V
VGS = 2.5 V
0
1
2
3
4
5
0.0 0.2 0.4 0.6 0.8
- Gate-to-Source Voltage (V)
Qg
- Total Gate Charge (nC)
V
GS
VDS = 10 V
ID = 150 mA
0.0 0.2 0.4 0.6 0.81.0 1.2 1.4
1000
1
VSD )V( egatloV niarD-ot-ecruo- S
- Source Current (mA)
IS
TJ = 125 °C
TJ = 25 °C
TJ = 50 °C
10
100
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
20
40
60
80
100
04812 16 20
VDS - Drain-to-Source Voltage (V)
Crss
Coss
Ciss
VGS = 0 V
f = 1 MHz
C - Capacitance (pF)
0.60
0.80
1.00
1.20
1.40
1.60
- 50 - 25 0 25 50 75 100 125
VGS = 4.5 V
ID = 200 mA
TJ- Junction Temperature (°C)
VGS = 1.8 V
ID = 175 mA
RDS(on) - On-Resistance
(Normalized)
0
10
20
30
40
50
0123456
ID = 175 mA
- On-Resistance (Ω)
RDS(on)
VGS - Gate-to-Source Voltage (V)
ID = 200 mA
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4
Document Number: 71172
S10-2544-Rev. F, 08-Nov-10
Vishay Siliconix
Si1032R/X
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71172.
Threshold Voltage Variance vs. Temperature
- 0.3
- 0.2
- 0.1
0.0
0.1
0.2
0.3
- 50 - 25 0 25 50 75 100 125
ID = 0.25 mA
Variance (V)VGS(th)
TJ- Temperature (°C)
IGSS vs. Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
- 50 - 25 0 25 50 75 100 125
TJ- Temperature (°C)
IGSS - (µA)
VGS = 2.8 V
BVGSS vs. Temperature
Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A, Si1032R Only)
10-3 10-2 00601110-1
10-4 100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 500 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
VISHAY. Dwm LE: Wm pmosmcnsuggomiwshaymm www.v\shay,com/doc?91000
Package Information
www.vishay.com Vishay Siliconix
C15-1445-Rev. F, 23-Nov-15 1Document Number: 71348
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SC-75A: 3 Leads
DWG: 5868
Notes
Dimensions in millimeters will govern.
1.Dimension D does not include mold flash, protrusions or gate
burrs. Mold flash protrusions or gate burrs shall not exceed
0.10 mm per end. Dimension E1 does not include Interlead flash
or protrusion. Interlead flash or protrusion shall not exceed
0.10 mm per side.
2.Dimensions D and E1 are determined at the outmost extremes of
the plastic body exclusive of mold flash, tie bar burrs, gate burrs
and interlead flash, but including any mismatch between the top
and bottom of the plastic body.
3.Datums A, B and D to be determined 0.10 mm from the lead tip.
4.Terminal positions are shown for reference only.
5.These dimensions apply to the flat section of the lead between
0.08 mm and 0.15 mm from the lead tip.
C
MBA –
2X
1 2
3
A
1
2
D
C
bbb
4
B
3
D
3
D
D
Dbbb
D
bbb
D
e2
B1(b1)
3
e1
2XB1
E1
2X
e3
2
E
E/2
D
bbb
4X
D
Seating Plane
A
A2
A1
Base Metal
With Tin Planting
Section B-B 5
B1
b1
C
c1
L2
L
L1
B
B
2X
1
ddd
C
C
1
1
DIMENSIONS TOLERANCES
aaa 0.10
bbb 0.10
ccc 0.10
ddd 0.10
DIM. MILLIMETERS NOTE
MIN. NOM. MAX.
A- -0.80
A1 0.00 - 0.10
A2 0.65 0.70 0.80
B1 0.19 - 0.24 5
b1 0.17 - 0.21
c0.13-0.155
c1 0.10 - 0.12 5
D 1.48 1.575 1.68 1, 2
E 1.50 1.60 1.70
E1 0.66 0.76 0.86 1, 2
e1 0.50 BSC
e2 1.00 BSC
e3 0.50 BSC
L 0.15 0.205 0.30
L1 0.40 ref.
L2 0.15 BSC
q0°-8°
q1 4° - 10°
— VISHAY.. (o 356) 0.071 n m) Recommended Mwmmum Pads Dwmensmns m Inches/(mm) 'J'vve'n Number 72603 won 217 dwrca
Application Note 826
Vishay Siliconix
Document Number: 72603 www.vishay.com
Revision: 21-Jan-08 19
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR SC-75A: 3-Lead
0.014
(0.356)
0.071
(1.803)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.264
(0.660)
0.054
(1.372)
0.031
(0.798)
0.020
(0.503)
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Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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