NUP3105L, SZNUP3105L Datasheet by ON Semiconductor

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© Semiconductor Components Industries, LLC, 2014
October, 2017 Rev. 4
1Publication Order Number:
NUP3105L/D
NUP3105L, SZNUP3105L
ESD Protection Diode
Dual Line CAN Bus Protector
The SZ/NUP3105L has been designed to protect the CAN
transceiver in 24 V systems from ESD and other harmful transient
voltage events. This device provides bidirectional protection for each
data line with a single compact SOT23 package, giving the system
designer a low cost option for improving system reliability and
meeting stringent EMI requirements.
Features
350 W Peak Power Dissipation per Line (8/20 msec Waveform)
Low Reverse Leakage Current (< 100 nA)
Low Capacitance HighSpeed CAN Data Rates
IEC Compatibility: IEC 6100042 (ESD): Level 4
IEC 6100044 (EFT): 50 A – 5/50 ns
IEC 6100045 (Lighting) 8.0 A (8/20 ms)
Flammability Rating UL 94 V0
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
Industrial Control Networks
Smart Distribution Systems (SDS®)
DeviceNet
Automotive Networks
Low and HighSpeed CAN
Fault Tolerant CAN
Trucks
www.onsemi.com
SOT23
CASE 318
STYLE 27
PIN 1
PIN 3
PIN 2
MARKING DIAGRAM
27F = Device Code
M = Date Code
G= PbFree Package
SOT23
DUAL BIDIRECTIONAL
VOLTAGE SUPPRESSOR
350 W PEAK POWER
1
27F MG
G
CAN
Transceiver
CAN_H
CAN_L
NUP3105L
CAN Bus
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
(Note: Microdot may be in either location)
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NUP3105L, SZNUP3105L
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2
MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified)
Symbol Rating Value Unit
PPK Peak Power Dissipation
8 x 20 ms Double Exponential Waveform (Note 1) 350
W
TJOperating Junction Temperature Range 55 to 150 °C
TJStorage Temperature Range 55 to 150 °C
TLLead Solder Temperature (10 s) 260 °C
ESD Human Body model (HBM)
Machine Model (MM)
IEC 6100042 Specification (Contact)
8.0
400
30
kV
V
kV
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Nonrepetitive current pulse per Figure 1.
ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified)
Symbol Parameter Test Conditions Min Typ Max Unit
VRWM Reverse Working Voltage (Note 2) 32 V
VBR Breakdown Voltage IT = 1 mA (Note 3) 35.6 V
IRReverse Leakage Current VRWM = 32 V 100 nA
VCClamping Voltage IPP = 5 A (8/20 ms Waveform)
(Note 4)
59 V
VCClamping Voltage IPP = 8 A (8/20 ms Waveform)
(Note 4)
66 V
IPP Maximum Peak Pulse Current 8/20 ms Waveform (Note 4) 8.0 A
CJ Capacitance VR = 0 V, f = 1 MHz (Line to GND) 30 pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Surge protection devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater
than the DC or continuous peak operating voltage level.
3. VBR is measured at pulse test current IT
.
4. Pulse waveform per Figure 1.
TYPICAL PERFORMANCE CURVES
(TJ = 25°C unless otherwise noted)
Figure 1. Pulse Waveform, 8/20 ms
110
90
80
70
60
50
40
30
20
10
00 5 15 25
t, TIME (ms)
% OF PEAK PULSE CURRENT
WAVEFORM
PARAMETERS
tr = 8 ms
td = 20 ms
td = IPP/2
30
Figure 2. Clamping Voltage vs Peak Pulse Current
12.0
10.0
8.0
6.0
4.0
2.045 60
VC, CLAMPING VOLTAGE (V)
IPP
, PEAK PULSE CURRENT (A)
50 55 65 70
100
10 20
ct
PULSE WAVEFORM
8 x 20 ms per Figure 1
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NUP3105L, SZNUP3105L
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3
Surge Protection Diode Protection Circuit
Surge protection diodes provide protection to a
transceiver by clamping a surge voltage to a safe level. surge
protection diodes have high impedance below and low
impedance above their breakdown voltage. A surge
protection Zener diode has its junction optimized to absorb
the high peak energy of a transient event, while a standard
Zener diode is designed and specified to clamp a
steady state voltage.
Figure 3 provides an example of a dual bidirectional surge
protection diode array that can be used for protection with
the highspeed CAN network. The bidirectional array is
created from four identical Zener surge protection diodes.
The clamping voltage of the composite device is equal to the
breakdown voltage of the diode that is reversed biased, plus
the diode drop of the second diode that is forwarded biased.
Figure 3. HighSpeed and Fault Tolerant CAN Surge
Protection Circuit
CAN
Transceiver
CAN_H
CAN_L
NUP3105L
CAN Bus
ORDERING INFORMATION
Device Package Shipping
NUP3105LT1G SOT23
(PbFree)
3,000 / Tape & Reel
SZNUP3105LT1G* SOT23
(PbFree)
3,000 / Tape & Reel
NUP3105LT3G SOT23
(PbFree)
10,000 / Tape & Reel
SZNUP3105LT3G* SOT23
(PbFree)
10,000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP
Capable.
NUP3105L, SZNUP3105L
www.onsemi.com
4
PACKAGE DIMENSIONS
SOT23 (TO236)
CASE 31808
ISSUE AR
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c
0−−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW
END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
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PUBLICATION ORDERING INFORMATION
N. American Technical Support: 8002829855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81358171050
NUP3105L/D
Honeywell and SDS are registered trademarks of Honeywell International Inc.
DeviceNet is a trademark of Rockwell Automation.
LITERATURE FULFILLMENT:
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Fax: 3036752176 or 8003443867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
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