SCT2120AF Datasheet by Rohm Semiconductor

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Datasheet
SCT2120AF
N-channel SiC power MOSFET
650V
120m
29A
6) Pb-free lead plating ; RoHS compliant
V
DSS
R
DS(on)
(Typ.)
I
D
P
D
4) Easy to parallel
Features
165W
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
Outline
Inner circuit
Packaging specifications
TO220AB
Parameter
T
c
= 25C
Drain - Source voltage
Continuous drain current
Absolute maximum ratings (T
a
= 25C)
Induction heating
Application
Switch mode power supplies
Solar inverters
Motor drives
DC/DC converters
Gate - Source voltage (DC)
Gate - Source surge voltage (T
surge
˂ 300nsec) V
GSS-surge
*3
5) Simple to drive
Marking
Pulsed drain current
Basic ordering unit (pcs)
T
c
= 100C
V
6 to 22
Unit
I
D,pulse
*2
V
20
I
D
*1
Range of storage temperature T
stg
Power dissipation (T
c
= 25C)
Junction temperature
P
D
T
j
175
C
W
C
55 to 175
165
Tube
-
Type
Packing
Reel size (mm)
C
SCT2120AF
Tape width (mm) -
50
Packing code
10 to 26 V
Symbol Value
29
72
V
GSS
A
V
DSS
650
A
A
I
D
*1
(1) Gate
(2) Drain
(3) Source
*1 Body Diode
(1)
(3)
(2)
*1
(1) (2) (3)
1/12 2017.07 - Rev.E
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Datasheet
SCT2120AF
*1 Limited only by maximum temperature allowed.
*2 PW 10s, Duty cycle 1%
*3 Example of acceptable Vgs waveform
*4 Pulsed
Values
-
Typ.
Gate - Source leakage current I
GSS-
V
GS
= 6V, V
DS
= 0V - -100
Parameter
T
sold
Soldering temperature, wavesoldering for 10s
ConditionsSymbol
Electrical characteristics (T
a
= 25C)
265-
Max.
Parameter
0.91
Values
Thermal resistance
Thermal resistance, junction - case
Symbol
0.70-
Typ.Min.
R
thJC
V
-
-
-
2.8
100-
4.0
2
nA
nA
V
A
Unit
C/W
C
Unit
Max.Min.
-
650
10
-
1-
Gate threshold voltage V
GS (th)
V
DS
= V
GS
, I
D
= 3.3mA 1.6
-Gate - Source leakage current V
GS
= 22V, V
DS
= 0V
I
GSS+
T
j
= 25C
Zero gate voltage
drain current
V
DS
= 650V, V
GS
= 0V
V
(BR)DSS
V
GS
= 0V, I
D
= 1mA
T
j
= 150°C
I
DSS
Drain - Source breakdown
voltage
2/12 2017.07 - Rev.E
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Datasheet
SCT2120AF
Parameter
10.4
-Gate - Drain charge 21
Total gate charge
Gate - Source charge Qgs
*4
Qg
*4
Qgd
*4
VGate plateau voltage V(plateau) VDD = 300V, ID = 10A --
Unit
-14-
Min.
nC
61 -
-
-
Symbol
Values
Max.
VGS = 18V
Conditions
Typ.
ID = 10A
VDD = 300V
Gate Charge characteristics (Ta = 25C)
Rise time tr
*4 VGS = 18V/0V
Turn - off delay time
Fall time
RL = 30
VDD = 300V, ID=10A
VGS = 18V/0V
RG = 0, L=500µH
*Eon includes diode
reverse recovery
Turn - on switching loss Eon
*4
Turn - off switching loss Eoff
*4
Crss
pF- 115 -
ns
60 -
19 -
-22
-
-
-
RG = 0
-
VGS = 0V
VDS = 0V to 300V
31
f = 1MHz
td(off)
*4
tf
*4
-61-
Effective output capacitance,
energy related Co(er)
Turn - on delay time td(on)
*4
µJ
-S
pF
-13
-
VGS = 0V - 1200 -
-90
-
VDD = 300V, ID = 10A -
-
gfs
*4 VDS = 10V, ID = 10A
41
Electrical characteristics (Ta = 25C)
Parameter Symbol Conditions
Values
Unit
Min. Typ. Max.
Reverse transfer capacitance
Transconductance
Input capacitance
-
Output capacitance Coss VDS = 500V
2.7
Ciss
-
Static drain - source
on - state resistance
Gate input resistance RGf = 1MHz, open drain - 13.8 -
RDS(on)
*4
Tj = 125°C - 149
m
Tj = 25C- 120 156
-
VGS = 18V, ID = 10A
3/12 2017.07 - Rev.E
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Datasheet
SCT2120AF
-V
ns-
-A
Forward voltage
Reverse recovery time
Reverse recovery charge
t
rr
*4
3.0
-
V
GS
= 0V, I
S
= 10A
Peak reverse recovery current
4.3
I
rrm
*4
-
Q
rr
*4
A
A
29
Inverse diode direct current,
pulsed
Unit
72-
Parameter
-
Symbol Conditions
Inverse diode continuous,
forward current I
S
*1
I
SM
*2
Body diode electrical characteristics (Source-Drain) (T
a
= 25C)
-53-nC
V
SD
*4
Typ.Min. Max.
Values
T
c
= 25C
I
F
= 10A, V
R
= 400V
di/dt = 160A/s
33
--
-
R
th2
404m C
th2
Ws/K
1.55m
5.23m
196m C
th3
83.3m
R
th3
K/W
96.1m C
th1
R
th1
Typical Transient Thermal Characteristics
Symbol Value Unit UnitValueSymbol
4/12 2017.07 - Rev.E
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Datasheet
SCT2120AF
Electrical characteristic curves
0
20
40
60
80
100
120
140
160
180
0 50 100 150 200
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Ta= 25ºC
Single Pulse
Fig.1 Power Dissipation Derating Curve
Power Dissipation : PD [W]
Junction Temperature : Tj [°C]
Fig.2 Maximum Safe Operating Area
Drain Current : ID[A]
Drain - Source Voltage : VDS [V]
Fig.3 Typical Transient Thermal
Resistance vs. Pulse Width
Transient Thermal Resistance : Rth [K/W]
Pulse Width : PW [s]
0.1
1
10
100
0.1 1 10 100 1000
Operation in
this area is
limited
by RDS(ON)
PW= 10ms
PW = 100s
PW = 1ms
PW = 100ms
Ta= 25ºC
Single Pulse
5/12 2017.07 - Rev.E
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Datasheet
SCT2120AF
Electrical characteristic curves
Fig.4 Typical Output Characteristics(I)
Drain Current : ID[A]
Drain - Source Voltage : VDS [V]
Fig.5 Typical Output Characteristics(II)
Drain Current : ID[A]
Drain - Source Voltage : VDS [V]
Fig.6 Tj = 150°C Typical Output
Characteristics(I)
Drain Current : ID[A]
Drain - Source Voltage : VDS [V]
Fig.7 Tj= 150°C Typical Output
Characteristics(II)
Drain Current : ID[A]
Drain - Source Voltage : VDS [V]
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
0246810
Ta= 25ºC
Pulsed
VGS= 20V
VGS= 18V
VGS= 16V
VGS= 14V
VGS= 12V
10V
8V
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
012345
Ta = 25ºC
Pulsed
VGS= 20V
VGS= 18V
VGS= 16V
VGS= 12V
VGS= 10V
VGS= 8V
VGS= 14V
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
0246810
Ta = 150ºC
Pulsed
VGS= 10V
VGS= 8V
VGS= 20V
VGS= 18V
VGS= 16V
VGS= 14V
VGS= 12V
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
012345
Ta = 150ºC
Pulsed
VGS= 8V
VGS= 10V
VGS= 20V
VGS= 18V
VGS= 16V
VGS= 14V
VGS= 12V
6/12 2017.07 - Rev.E
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Datasheet
SCT2120AF
Electrical characteristic curves
0.01
0.1
1
10
0.01 0.1 1 10
VDS = 10V
Pulsed
Ta = 150ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-50 0 50 100 150 200
VDS = VGS
ID = 3.3mA
Fig.8 Typical Transfer Characteristics (I)
Drain Current : ID[A]
Gate - Source Voltage : VGS [V]
Fig.10 Gate Threshold Voltage
vs. Junction Temperature
Gate Threshold Voltage : V GS(th) [V]
Junction Temperature : Tj[°C]
Fig.11 Transconductance vs. Drain Current
Transconductance : gfs [S]
Drain Current : ID[A]
0.001
0.01
0.1
1
10
0 2 4 6 8 10 12 14 16 18 20
Ta= 150ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC
VDS = 10V
Pulsed
Fig.9 Typical Transfer Characteristics (II)
Drain Current : ID[A]
Gate - Source Voltage : VGS [V]
0
2
4
6
8
10
12
14
16
18
20
22
24
0 2 4 6 8 10 12 14 16 18 20
Ta= 150ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC
VDS = 10V
Pulsed
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Datasheet
SCT2120AF
Electrical characteristic curves
0
0.1
0.2
0.3
0.4
0.5
0.6
6 8 10 12 14 16 18 20 22
ID = 10A
ID = 21A
Ta = 25ºC
Pulsed
0
0.05
0.1
0.15
0.2
0.25
0.3
-50 0 50 100 150 200
VGS = 18V
Pulsed
ID = 10A
ID = 20A
0.1
1
0.1 1 10 100
VGS = 18V
Pulsed
Ta = 150ºC
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
Fig.12 Static Drain - Source On - State
Resistance vs. Gate - Source Voltage
Static Drain - Source On-State Resistance
: RDS(on) []
Gate - Source Voltage : VGS [V]
Fig.13 Static Drain - Source On - State
Resistance vs. Junction Temperature
Static Drain - Source On-State Resistance
: RDS(on) []
Junction Temperature : Tj[ºC]
Fig.14 Static Drain - Source On - State
Resistance vs. Drain Current
Static Drain - Source On-State Resistance
: RDS(on) []
Drain Current : ID[A]
8/12 2017.07 - Rev.E
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Datasheet
SCT2120AF
Electrical characteristic curves
0
5
10
15
20
25
0 200 400 600 800
Ta= 25ºC
1
10
100
1000
10000
0.1 1 10 100 1000
Ciss
Coss
Crss
Ta = 25ºC
f = 1MHz
VGS = 0V
0
5
10
15
20
0 10203040506070
Ta = 25ºC
VDD =300V
ID = 10A
Pulsed
Fig.15 Typical Capacitance
vs. Drain - Source Voltage
Capacitance : C [pF]
Drain - Source Voltage : VDS [V]
Fig.16 Coss Stored Energy
Coss Stored Energy : EOSS [µJ]
Drain - Source Voltage : VDS [V]
Fig.17 Switching Characteristics
Switching Time : t [ns]
Drain Current : ID[A]
Fig.18 Dynamic Input Characteristics
Gate - Source Voltage : VGS [V]
Total Gate Charge : Qg[nC]
1
10
100
1000
10000
0.1 1 10 100
tf
td(on)
Ta = 25ºC
VDD = 300V
VGS = 18V
RG = 0
tr
td(off)
9/12 2017.07 - Rev.E
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Datasheet
SCT2120AF
Electrical characteristic curves
0
50
100
150
200
250
300
350
400
450
500
0 5 10 15 20 25 30
Ta= 25ºC
VDD=300V
VGS = 18V/0V
RG= 0
L=500µH Eon
Eoff
Fig.19 Typical Switching Loss
vs. Drain - Source Voltage
Switching Energy : E [µJ]
Drain - Source Voltage : VDS [V]
Fig.20 Typical Switching Loss
vs. Drain Current
Switching Energy : E [µJ]
Drain - Current : ID[A]
Fig.21 Typical Switching Loss
vs. External Gate Resistance
Switching Energy : E [µJ]
External Gate Resistance : RG[]
0
10
20
30
40
50
60
70
80
90
100
110
120
0 100 200 300 400 500
Ta= 25ºC
ID=10A
VGS = 18V/0V
RG= 0
L=500µH Eon
Eoff
0
50
100
150
200
0 5 10 15 20 25 30
Ta= 25ºC
VDD=300V
ID=10A
VGS = 18V/0V
L=500µH Eon
Eoff
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Datasheet
SCT2120AF
Electrical characteristic curves
0.01
0.1
1
10
100
012345678
VGS = 0V
Pulsed
Ta = 150ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
10
100
1000
110100
Ta = 25ºC
di / dt = 160A / µs
VR= 400V
VGS = 0V
Pulsed
Fig.22 Inverse Diode Forward Current
vs. Source - Drain Voltage
Inverse Diode Forward Current : IS[A]
Source - Drain Voltage : VSD [V]
Fig.23 Reverse Recovery Time
vs.Inverse Diode Forward Current
Reverse Recovery Time : trr [ns]
Inverse Diode Forward Current : IS[A]
11/12 2017.07 - Rev.E
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Datasheet
SCT2120AF
Measurement circuits
Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform
Fig.3-1 Switching Energy Measurement Circuit Fig.3-2 Switching Waveforms
Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform
V
GS
I
G(Const.)
V
DS
D.U.T.
I
D
R
L
V
DD
90%
90% 90%
10% 10%
50%
10%
50%
V
GS
Pulse width
V
DS
t
on
t
off
t
r
t
d(on)
t
f
t
d(off)
VGS
RG
VDS
D.U.T.
ID
RL
VDD
V
G
V
GS
Charge
Q
g
Q
gs
Q
gd
t
rr
I
rr
100%
I
rr
I
F
0
I
rr
90%
d
rr
/ d
t
I
rr
10%
DRIVER
MOSFET
R
G
D.U.T. L
IF
V
DD
D.U.T.
Vsurge
Irr
Eon = ID×VDS Eoff = ID×VDS
ID
VDS
DRIVER
MOSFET
R
G
D.U.T. L
IF
V
DD
Same type
device as
D.U.T.
D.U.T.
ID
12/12 2017.07 - Rev.E
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R1102
S
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The information contained herein is subject to change without notice.
Before you use our Products, please contact our sales representative
and verify the latest specifica-
tions :
Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
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responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
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For use of our Products in applications requiring a high degree of reliability (as exemplified
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