uClamp3311PQ Datasheet by Semtech Corporation

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7‘ '1 SEMTECH
PROTECTION PRODUCTS
1www.semtech.com
PROTECTION PRODUCTS - MicroClamp®
uClamp3311PQ
Low Voltage µClamp®
for Automotive Applications
Description Features
Dimensions Schematic & PIN Configuration
Revision 7/282011
The µClamp®3311PQ transient voltage suppressor is
specifically designed to protect sensitive components
which are connected to low-voltage data and transmis-
sion lines from overvoltage caused by ESD (electro-
static discharge), CDE (cable discharge events), and
EFT (electrical fast transients). It is rated to Grade 3
of AEC-Q100 for use in automotive applications.
The µClamp®3311PQ is constructed using Semtech’s
proprietary EPD process technology. The EPD process
provides low standoff voltages with significant reduc-
tions in leakage currents and capacitance over silicon-
avalanche diode processes. They feature a true
operating voltage of 3.3 volts for superior protection
when compared to traditional pn junction devices.
The µClamp3311PQ is in an 2-pin SLP1006P2 pack-
age. It measures 1.0 x 0.6 x 0.5mm. The leads are
spaced at a pitch of 0.65mm and are finished with
lead-free NiPdAu. Each device will protect one line
operating at 3.3 volts. It gives the designer the flexibil-
ity to protect single lines in applications where arrays
are not practical. They may be used to meet the ESD
immunity requirements of IEC 61000-4-2. The combi-
nation of low voltage, small size and high ESD surge
capability makes them ideal for protection of sensitive
electronics in automotive applications.
Applications
Mechanical Characteristics
Automotive Applications
Low Voltage Data Lines
10/100 Ethernet
Transient protection for data lines to
IEC 61000-4-2 (ESD) ±25kV (air), ±20kV (contact)
IEC 61000-4-4 (EFT) 40A (tp = 5/50ns)
Cable Discharge Event (CDE)
Qualified to AEC-Q100, Grade 3
Protects one data line
Low clamping voltage
Working voltage: 3.3V
Low leakage current
Solid-state silicon-avalanche technology
SLP1006P2 package
Pb-Free, Halogen Free, RoHS/WEEE Compliant
Nominal Dimensions: 1.0 x 0.6 x 0.5 mm
Lead Finish: NiPdAu
Molding compound flammability rating: UL 94V-0
Marking : Marking code
Packaging : Tape and Reel
SLP1006P2 (Bottom View)
Maximum Dimensions (mm)
0.65
0.50
0.60
1.0
'1 SEMTECH
2© 2011 Semtech Corp. www.semtech.com
PROTECTION PRODUCTS
uClamp3311PQ
Absolute Maximum Rating
Electrical Characteristics (T=25oC)
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MWR
3.3V
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TP
I
TP
C°52=T,Aµ2=5.3V
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TP
I
TP
C°58=T,Aµ2=5.3V
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BS
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BS
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V
MWR
C°52=T,V3.3=50.05.0Aµ
tnerruCegakaeLesreveRI
R
V
MWR
C°58=T,V3.3=1.01Aµ
egatloVgnipmalCV
C
I
PP
sµ02/8=pt,A1=8V
egatloVgnipmalCV
C
I
PP
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3
© 2011 Semtech Corp. www.semtech.com
PROTECTION PRODUCTS
uClamp3311PQ
Typical Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time
0
10
20
30
40
50
60
70
80
90
100
110
0 25 50 75 100 125 150
Ambient Temperature - TA (oC)
% of Rated Power or IPP
Power Derating Curve
Clamping Voltage vs. Peak Pulse Current
Reverse Leakage Current vs. Temperature
0.01
0.1
1
10
0.1 1 10 100 1000
Pulse Duration - tp (us)
Peak Pulse Power - PPP (kW)
Normalized Capacitance vs. Reverse Voltage
Insertion Loss S21
START
. 030 MHz 3
STOP 000
.
000 000 MHz
CH1 S21 LOG 6 dB / REF 0 dB
1: -3.0120 dB
616.229 MHz
2: -3.8355 dB
900 MHz
3: -5.9804 dB
1.8 GHz
4: -8.1629 dB
2.5 GHz
0 dB
-6 dB
-12 dB
-18 dB
-24 dB
-30 dB
-36 dB
1
GHz
100
MHz 3
GHz
10
MHz
1
MHz
1 2
3
4
0
5
10
15
0.0 1.0 2.0 3.0 4.0 5.0 6.0
Peak Pulse Current - IPP (A)
Clamping Voltage - VC (V)
TA=25OC
8/20μs pulse
0.0
0.3
0.5
0.8
1.0
1.3
0.0 1.0 2.0 3.0 4.0
Reverse Voltage - VR (V)
Capacitance (normalized to VR=0)
TA=25OC
f = 1 MHz
0
50
100
150
-75 -25 25 75 125 175
Temperature (OC)
Leakage Current (nA)
7. '1 SEMTECH
4© 2011 Semtech Corp. www.semtech.com
PROTECTION PRODUCTS
uClamp3311PQ
Device Connection Options
The µClamp3311PQ is designed to protect one data
line operating up to 3.3 volts. It will present a high
impedance to the protected line up to 3.3 volts. It will
“turn on” when the line voltage exceeds 3.5 volts. The
device is bidirectional and may be used on lines where
the signal polarity is above and below ground. These
devices are not recommended for use on dc power supply
lines due to their snap-back voltage characteristic.
EPD TVS Characteristics
These devices are constructed using Semtech’s
proprietary EPD technology. The structure of the EPD
TVS is vastly different from the traditional pn-junction
devices. At voltages below 5V, high leakage current
and junction capacitance render conventional ava-
lanche technology impractical for most applications.
However, by utilizing the EPD technology, these devices
can effectively operate at 3.3V while maintaining
excellent electrical characteristics.
The EPD TVS employs a complex nppn structure in
contrast to the pn structure normally found in tradi-
tional silicon-avalanche TVS diodes. The EPD mecha-
nism is achieved by engineering the center region of
the device such that the reverse biased junction does
not avalanche, but will “punch-through” to a conduct-
ing state. This structure results in a device with supe-
rior DC electrical parameters at low voltages while
maintaining the capability to absorb high transient
currents.
Circuit Board Layout Recommendations for Suppres-
sion of ESD.
Good circuit board layout is critical for the suppression
of ESD induced transients. The following guidelines are
recommended:
zPlace the TVS near the input terminals or connec-
tors to restrict transient coupling.
zMinimize the path length between the TVS and the
protected line.
zMinimize all conductive loops including power and
ground loops.
zThe ESD transient return path to ground should be
kept as short as possible.
zNever run critical signals near board edges.
zUse ground planes whenever possible.
Applications Information
Device Schematic & Pin Configuration
IPP
ISB
IPT
IR
VRWM VV PT VC
VF
IF
SB
EPD TVS IV Characteristic Curve
'1 SEMTECH BOTI'OM VIEW e SEATING MIN NOM MAX MIN OM MAX .020 . , , .020 .024 .028 0,50 , 0.70
5
© 2011 Semtech Corp. www.semtech.com
PROTECTION PRODUCTS
uClamp3311PQ
Outline Drawing - SLP1006P2
Land Pattern - SLP1006P2
INCHES
.026 BSC
aaa
N
E
L
e
.008
.020
DIM
A
MIN
.018
.016
0.30
0.70
0.20
0.50
.003
2
.010
.024
.012
.028
0.08
2
0.25
0.60
0.65 BSC
MILLIMETERS
MAX
0.55
0.55
DIMENSIONS
MIN
0.45
NOM
.020
.020
MAX
.022
.022
NOM
0.40
0.50
0.50
CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).
NOTES:
1.
BOTTOM VIEW
TOP VIEW
AB
C
b
aaa C
SEATING
PLANE
bbb C A B
D.035 .039 .043 0.90 1.10
1.00
.004bbb 0.10
D
E
A1
A
bxN
e
A1 .000 .001 .002 0.00 0.03 0.05
R
2x L
PIN 1 ID
R .002 .004 .006 0.05 0.10 0.15
THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY.
CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR
NOTES:
2.
DIM
Y
G
C
MILLIMETERSINCHES
(0.85)
.055
.012
.022
(.033)
1.40
0.55
0.30
DIMENSIONS
COMPANY'S MANUFACTURING GUIDELINES ARE MET.
Z
Y
(C) GZ
X .024 0.60
X
1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).
7. '1 SEMTECH REMEMHEM nan \V-‘ACHHE lEFEDE-ICE __ mu Lamp LM; ur yum Um: DRAFT .NI: [mm mum nip: rmmw 7: mm
6© 2011 Semtech Corp. www.semtech.com
PROTECTION PRODUCTS
uClamp3311PQ
Marking Code Ordering Information
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leeR
leeR
eziS
TCT.QP1133pmalCu000,3hcnI7
MicroClamp, uClamp and µClamp are trademarks of Semtech
Corporation
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mm8 mm2.4
)561.(
mm1.0+5.1
mm0.0-
500.+95.0(
)000.-
mm4.0
52.0±
)130.(
01.±057.1
mm
)400.±960.
(
50.0±5.3
mm
)200.±831.(
01.0±0.4
mm
-00.±751.(
)4
1.0±0.4
mm
-00.±751.(
)4
50.0±0.2
mm
)200.±970.(
20.0±452.0
)610.(mm
mm0.8
mm3.0+
mm1.0-
)210.±213.(
0A0B0K
mm01.0-/+96.0mm01.0-/+91.1mm01.0-/+66.0
X
Notes:
1) Device is electrically symmetrical
Tape and Reel Specification
Contact Information
Semtech Corporation
Protection Products Division
200 Flynn Road, Camarillo, CA 93012
Phone: (805)498-2111 FAX (805)498-3804

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