ESD102-U1-02ELS Datasheet by Infineon Technologies

View All Related Products | Download PDF Datasheet
(in/fineon
Power Management & Multimarket
Data Sheet
Revision 1.2, 2015-12-14
Final
ESD102-U1-02ELS
Uni-directional, 3.3 V, 0.4 pF, 0201, RoHS
ESD102-U1-02ELS
Protection Devices
TVS (Transient Voltage Suppressor)
Edition 2015-12-14
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2015 Infineon Technologies AG
All Rights Reserved.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com)
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
infineon \ 11
ESD102-U1-02ELS
Product Overview
Final Data Sheet 3 Revision 1.2, 2015-12-14
1 Product Overview
1.1 Features
ESD / transient protection of high speed data lines according to:
IEC61000-4-2 (ESD): ±20 kV (air / contact)
IEC61000-4-4 (EFT): ±2.5 kV / 50 A (5/50 ns)
IEC61000-4-5 (surge): ±3 A (8/20 μs)
Uni-directional working voltage: VRWM = 3.3 V
Ultra low capacitance: CL = 0.4 pF (typical)
Very low clamping voltage: VCL = 8 V (typical) at IPP = 16 A
Low reverse current: IR = 1 nA (typical)
Very low dynamic resistance: RDYN = 0.19 (typical)
Pb-free (RoHS compliant) and halogen free package, very small form factor 0.62 x 0.32 x 0.31 mm3
1.2 Application Examples
USB 3.0, 10/100/1000 Ethernet, Firewire, DVI, HDMI, S-ATA, DisplayPort
Mobile HDMI Link, MDDI, MIPI, SWP / NFC
1.3 Product Description
Figure 1 Pin Configuration and Schematic Diagram
Table 1 Part Information
Type Package Configuration Marking code
ESD102-U1-02ELS TSSLP-2-3 1 line, uni-directional F
a) Pin configuration
PG-TS(S)LP-2_Single_Diode_PinConf_and_SchematicDiag.vsd
b) Schematic diagram
Pin 1 Pin 2
Pin 1
Pin 2
Pin 1 marking
(lasered)
@neon
ESD102-U1-02ELS
Maximum Ratings
Final Data Sheet 4 Revision 1.2, 2015-12-14
2 Maximum Ratings
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
3 Electrical Characteristics at TA = 25 °C, unless otherwise specified
Figure 2 Definitions of Electrical Characteristics
Table 2 Maximum Rating at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
ESD air discharge1)
ESD contact discharge1)
1) VESD according to IEC61000-4-2
VESD ±20
±20
kV
Peak pulse current2)
2) Stress pulse: 8/20μs current waveform according to IEC61000-4-5
IPP ±3 A
Operating temperature TOP -55 to 125 °C
Storage temperature Tstg -65 to 150 °C
















 
 
 
 
!"  !"! !#$%!& '  


 ()  
* 
  
 % )+
 
  %#
 

%#
"
"
")# 
"
 
@neon
ESD102-U1-02ELS
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Final Data Sheet 5 Revision 1.2, 2015-12-14
Table 3 DC Characteristics at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Reverse working voltage VRWM 3.3 V Pin 1 to Pin 2
Trigger voltage Vt1 –6.2
Holding voltage Vh3.35 4 4.4 Pin 1 to Pin 2, IR = 10 mA
Reverse current IR–150nAVR = 3.3 V,
from Pin 1 to Pin 2
Table 4 AC Characteristics at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Line capacitance CL 0.4 0.65 pF VR = 0 V, f = 1 MHz
0.4 0.65 pF VR = 0 V, f = 1 GHz
Series inductance LS–0.2–nH
Table 5 ESD and Surge Characteristics at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Clamping voltage1)
1) Please refer to Application Note AN210[1]. TLP parameter: Z0 = 50 Ω , tp = 100ns, tr = 0.6 ns.
VCL –8–VITLP = 16 A, tp = 100 ns,
from Pin 1 to Pin 2
–11ITLP = 30A, tp = 100 ns
from Pin 1 to Pin 2
Forward clamping
voltage1)
VFC –6– ITLP = 16 A, tp = 100 ns,
from Pin 2 to Pin 1
–9– ITLP = 30 A, tp = 100 ns,
from Pin 2 to Pin 1
Dynamic resistance1) RDYN –0.19Ωtp = 100 ns
from Pin 1 to Pin 2
–0.23Ωtp = 100 ns
from Pin 2 to Pin 1
@neon
ESD102-U1-02ELS
Typical Characteristics at TA=25°C, unless otherwise specified
Final Data Sheet 6 Revision 1.2, 2015-12-14
4 Typical Characteristics at TA=25°C, unless otherwise specified
Figure 3 Reverse leakage current, IR = (VR)
Figure 4 Reverse current IR = f(TA), VR = 3.3 V
10-12
10-11
10-10
10-9
10-8
10-7
0 1 2 3 4
IR [A]
VR [V]
10-9
10-8
10-7
10-6
25 50 75 100 125 150
IR [A]
TA [°C]
@neon
ESD102-U1-02ELS
Typical Characteristics at TA=25°C, unless otherwise specified
Final Data Sheet 7 Revision 1.2, 2015-12-14
Figure 5 Forward current, IF = (VF)
Figure 6 Line capacitance CL = f(VR), f = 1MHz, from pin 1 to pin 2
10-9
10-8
10-7
10-6
10-5
10-4
10-3
10-2
10-1
100
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
IF [A]
VF [V]
0.2
0.4
0.6
0.8
0 0.5 1 1.5 2 2.5 3 3.5
CL [pF]
VR [V]
@neon
ESD102-U1-02ELS
Typical Characteristics at TA=25°C, unless otherwise specified
Final Data Sheet 8 Revision 1.2, 2015-12-14
Figure 7 Clamping voltage (ESD): VCL = f(t), 8 kV positive pulse from pin 1 to pin 2
Figure 8 Clamping voltage (ESD): VCL = f(t), 8 kV negative pulse from pin 1 to pin 2
-20
0
20
40
60
80
-100 0 100 200 300 400 500 600 700 800 900
VCL [V]
tp [ns]
Scope: 6 GHz, 20 GS/s
VCL-max-peak = 81 [V]
VCL-30ns-peak = 7 [V]
-80
-60
-40
-20
0
20
-100 0 100 200 300 400 500 600 700 800 900
VCL [V]
tp [ns]
Scope: 6 GHz, 20 GS/s
VCL-max-peak = -72 [V]
VCL-30ns-peak = -3 [V]
@neon
ESD102-U1-02ELS
Typical Characteristics at TA=25°C, unless otherwise specified
Final Data Sheet 9 Revision 1.2, 2015-12-14
Figure 9 Clamping voltage (ESD): VCL = f(t), 15 kV positive pulse from pin 1 to pin 2
Figure 10 Clamping voltage (ESD): VCL = f(t), 15 kV negative pulse from pin 1 to pin 2
-20
0
20
40
60
80
100
-100 0 100 200 300 400 500 600 700 800 900
VCL [V]
tp [ns]
Scope: 6 GHz, 20 GS/s
VCL-max-peak = 104 [V]
VCL-30ns-peak = 9 [V]
-100
-80
-60
-40
-20
0
20
-100 0 100 200 300 400 500 600 700 800 900
VCL [V]
tp [ns]
Scope: 6 GHz, 20 GS/s
VCL-max-peak = -98 [V]
VCL-30ns-peak = -7 [V]
@neon
ESD102-U1-02ELS
Typical Characteristics at TA=25°C, unless otherwise specified
Final Data Sheet 10 Revision 1.2, 2015-12-14
Figure 11 Clamping voltage (TLP): ITLP = f(VTLP) [1], pin 1 to pin 2
-50
-40
-30
-20
-10
0
10
20
30
40
50
-20 -10 0 10 20
-20
-15
-10
-5
0
5
10
15
20
ITLP [A]
Equivalent VIEC [kV]
VTLP [V]
ESD102-U1-02ELS
RDYN
RDYN = 0.19 Ω
RDYN = 0.23 Ω
@neon
ESD102-U1-02ELS
Typical Characteristics at TA=25°C, unless otherwise specified
Final Data Sheet 11 Revision 1.2, 2015-12-14
Figure 12 Insertion loss vs. frequency in a 50 system
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
10-2 0.1 1 10
Insertion Loss (|S21|) [dB]
Frequency [GHz]
ESD102-B1-02ELS
lnfineon Pmlecled line, signal level up lo *Vnwu (uni-directional) ESD sensitive L a device Connector The proleclion diode should be placed very close ID We localion where the ESD or olher lransients can occur lo keep loops and inductances as small as possible. Pin 2 should be connecled directly lo a ground plane on the board.
ESD102-U1-02ELS
Application Information
Final Data Sheet 12 Revision 1.2, 2015-12-14
5 Application Information
Figure 13 Single line, uni-directional ESD / Transient protection[2]
Application_ESD102-U1-02ELS.vsd
Infineon vs. fl J; T J} x 4
ESD102-U1-02ELS
Package Information
Final Data Sheet 13 Revision 1.2, 2015-12-14
6 Package Information
6.1 TSSLP-2-3
Figure 14 TSSLP-2-3 Package outline (dimension in mm)
Figure 15 TSSLP-2-3 Footprint (dimension in mm)
Figure 16 TSSLP-2-3 Packing (dimension in mm)
Figure 17 TSSLP-2-3 Marking example Table 1 “Part Information” on Page 3
TSSLP-2-3, -4-PO V01
±0.05
0.32
1
2
±0.035
0.2
1)
0.62
±0.05
+0.01
0.31-0.02
1) Dimension applies to plated terminals
Pin 1
marking
1)
±0.035
0.26
0.05 MAX.
Bottom viewTop view
0.355
0.27
0.19
0.19
0.19
Copper Solder mask Stencil apertures
0.57
0.24
0.62
0.32
0.24
0.14
TSSLP-2-1,-2-FP V02
Ex
4
Ey
0.35
Pin 1
marking
8
TSSLP-2-3, -4-MK V01
Pin 1 marking
1
Type code
infineon
ESD102-U1-02ELS
References
Final Data Sheet 14 Revision 1.2, 2015-12-14
References
[1] On-chip ESD protection for integrated circuits, Albert Z. H. Wang, ISBN:0-7923-7647-1
[2] Infineon AG - Application Note AN210: Effective ESD Protection Design at System Level Using VF-TLP
Characterization Methodology
[3] Infineon AG - Recommendations for PCB Assembly of Infineon TSLP and TSSLP Package
@neon
ESD102-U1-02ELS
Final Data Sheet 15 Revision 1.2, 2015-12-14
Trademarks of Infineon Technologies AG
AURIX™, BlueMoon™, COMNEON™, C166™, CROSSAVE™, CanPAK™, CIPOS™, CoolMOS™, CoolSET™,
CORECONTROL™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™,
EiceDRIVER™, EUPEC™, FCOS™, HITFET™, HybridPACK™, ISOFACE™, I²RF™, IsoPACK™, MIPAQ™,
ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PROFET™, PRO-SIL™,
PRIMARION™, PrimePACK™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SMARTi™,
SmartLEWIS™, TEMPFET™, thinQ!™, TriCore™, TRENCHSTOP™, X-GOLD™, XMM™, X-PMU™,
XPOSYS™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, PRIMECELL™,
REALVIEW™, THUMB™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership.
Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation
Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation.
FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of
Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of
INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of
Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP.
MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Sattelite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2010-06-09
Revision History: Revision 1.1, 2014-02-13
Page or Item Subjects (major changes since previous revision)
Revision 1.2, 2015-12-14
All Layout change
Published by Infineon Technologies AG
www.infineon.com

Products related to this Datasheet

TVS DIODE 3.3V 11V
TVS DIODE 3.3V 11V
TVS DIODE 3.3V 11V