ZXMN3A14FTA Datasheet by Diodes Incorporated

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ZXMN3A14F
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ZXMN3A14F
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS Max RDS(on)
Max ID
TA = 25°C
(Note 4)
30V 65mΩ @ VGS = 10V 3.2A
95mΩ @ VGS = 4.5V 2.6A
Description and Applications
This MOSFET utilizes a unique structure that combines the benefits
of low on-resistance with fast switching speed, making it ideal for
high-efficiency power management applications.
DC - DC converters
Power management functions
Disconnect switches
Motor control
Features and Benefits
Low on-resistance
Fast switching speed
Low gate charge
Low threshold
Totally Lead-Free & Fully RoHS compliant (Note 1)
Halogen and Antimony Free. “Green” Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Copper leadframe
Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXMN3A14FTA 314 7 8 3000 Units
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
3. For more packaging details, go to our website at http://www.diodes.com.
Marking Information
Top View Equivalent Circuit
314 = Product Type Marking Code
Top View
Pin Out
D
S
G
SOT23
314
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Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current VGS = 10V
(Note 5)
TA = 70°C (Note 5)
(Note 4) ID 3.9
3.2
3.2 A
Pulsed Drain Current (Note 6) IDM 18 A
Continuous Source Current (Body Diode) (Note 5) IS 2.3 A
Pulsed Source Current (Body Diode) (Note 6) ISM 18 A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 4)
Linear Derating Factor PD 1
8 W
mW/°C
Power Dissipation (Note 5)
Linear Derating Factor PD 1.5
12 W
mW/°C
Thermal Resistance, Junction to Ambient (Note 4) RθJA 125 °C/W
Thermal Resistance, Junction to Ambient (Note 5) RθJA 83 °C/W
Thermal Resistance, Junction to Leads (Note 7) RθJL 70.44 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Notes: 4. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
5. For a device surface mounted on FR4 PCB measured at t 5 secs.
6. Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300μs - pulse current limited by maximum junction temperature.
7. Thermal resistance from junction to solder-point (at the end of the drain lead).
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Thermal Characteristics
100m 1 10
10m
100m
1
10
Single Pulse
Tamb=25°C
RDS(on)
Limited
100µs
1ms
10ms
100ms
1s
DC
Safe Operating Area
ID Drain Current (A)
VDS Drain-Source Voltage (V) 0 20 40 60 80 100 120 140 160
0.0
0.2
0.4
0.6
0.8
1.0
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 1 10 100 1k
0
50
100
Tamb=25°C
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s) 100µ 1m 10m 100m 1 10 100 1k
1
10
100 Single Pulse
Tamb=25°C
Pulse Power Dissipation
Pulse Width (s)
Maximum Power (W)
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Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS 30 V ID = 250μA, VGS = 0V
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 30V, VGS = 0V
Gate-Source Leakage IGSS ±100 nA
VGS = ±12V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage VGS
(
th
)
1.0 2.2 V
ID = 250μA, VDS = VGS
Static Drain-Source On-Resistance (Note 8) RDS (ON) 48 65
m VGS = 10V, ID = 3.2A
69 95 VGS = 4.5V, ID = 2.6A
Forward Transconductance (Notes 8 and 10) gfs 7.1 S VDS = 15V, ID = 3.2A
Diode Forward Voltage (Note 8) VSD 0.85 0.95 V
TJ = 25°C, IS = 2.5A, VGS = 0V
Reverse Recovery Time (Note 10) tr
r
13 ns TJ = 25°C, IF = 1.6A,
di/dt = 100A/μs
Reverse Recovery Charge (Note 10) Qr
r
7 nC
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance Ciss 448
pF VDS = 15V, VGS = 0V
f = 1.0MHz
Output Capacitance Coss 82
Reverse Transfer Capacitance Crss 49
Turn-On Delay Time (Note 9) tD
(
on
)
2.4
ns VDD = 15V, ID = 1A,
RG 6.0Ω, VGS = 10V
Turn-On Rise Time (Note 9) t
r
2.5
Turn-Off Delay Time (Note 9) tD
(
off
)
13.1
Turn-Off Fall Time (Note 9) tf 5.3
Total Gate Charge (Note 9) Q
g
8.6
nC VDS =15V, VGS = 10V,
ID = 3.2A
Gate-Source Charge (Note 9) Q
g
s 1.4
Gate-Drain Charge (Note 9) Q
d 1.8
Notes: 8. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle 2%.
9. Switching characteristics are independent of operating junction temperature.
10. For design aid only, not subject to production testing.
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Typical Characteristics
0.1 1 10
0.1
1
10
0.1 1 10
0.1
1
10
1.5 2.0 2.5 3.0 3.5
0.1
1
-50 0 50 100 150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
110
0.1
1
0.4 0.6 0.8 1.0
0.1
1
10
3.5V
4.5V
6V
3V
Output Characteristics
T = 25°C
2.5V
VGS
10V
ID Drain Current (A)
VDS Drain-Source Voltage (V)
6V
2V
3V
4V
10V
Output Characteristics
T = 150°C
VGS
2.5V
ID Drain Current (A)
VDS Drain-Source Voltage (V)
Typical Transfer Characteristics
VDS = 10V
T = 25°C
T = 150°C
ID Drain Current (A)
VGS Gate-Source Voltage (V)
Normalised Curves v Temperature
RDS(on)
VGS = 10V
ID = 3.2A
VGS(th)
VGS = VDS
ID = 250uA
Normalised RDS(on) and VGS(th)
Tj Junction TemperatureC)
3.5V
6V
4V
10V
2.5V
On-Resistance v Drain Current
T = 25°C
3V VGS
RDS(on) Drain-Source On-Resistance (W)
ID Drain Current (A)
T = 150°C
T = 25°C
Source-Drain Diode Forward Voltage
VSD Source-Drain Voltage (V)
ISD Reverse Drain Current (A)
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Typical Characteristics - continued
0.1 1 10
0
500
CRSS
COSS
CISS
VGS = 0V
f = 1MHz
C Capacitance (pF)
VDS - Drain - Source Voltage (V) 0246810
0
2
4
6
8
10
ID = 3.2A
VDS = 15V
Gate-Source Voltage v Gate Charge
Capacitance v Drain-Source Voltage
Q - Charge (nC)
VGS Gate-Source Voltage (V)
Test Circuits
C
urrent
regulator
Charge
Gate charge test circuit
Switching time test circuit
Basicgatechargewaveform
Switching time waveforms
D.U.T
50k
0.2F
12V Same as
D.U.T
VGS
VGS
VDS
VGQGS QGD
QG
VGS
90%
10%
t(on) t(on)
td(on)
tr
trtd(of )
VDS
VDD
RD
RG
Pulse width 1S
Duty factor 0.1%
VDS
ID
IG
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Package Outline Dimensions
Suggested Pad Layout
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
α 0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
A
M
JL
D
F
BC
H
K
G
K1
XE
Y
C
Z
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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