ZVN4306G Datasheet by Diodes Incorporated

View All Related Products | Download PDF Datasheet
ZVN43066 "Q W Code
ZVN4306G
Document number: DS33369 Rev. 4 - 2
1 of 5
www.diodes.com
February 2015
© Diodes Incorporated
ZVN
4306
G
60V N-CHANNEL ENHANCEMENT MODE VERTICAL MOSFET
Features and Benefits
V
(BR)DSS
> 60V
R
DS(ON)
0.33 @ V
GS
= 10V
Maximum Continuous Drain Current I
D
= 2.1A
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Applications
DC-DC Converters
Solenoids / Relay Driver for Automotive
Mechanical Data
Case: SOT223
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 0.112 grams (Approximate)
Ordering Information
(Note 4)
Part Number
Marking
Tape width (mm)
Quantity pe
r reel
ZVN4306GTA ZVN4306 7 8 1,000
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
ZVN4306 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5= 2015)
WW or WW = Week Code (01~53)
Equivalent Circuit
D
S
G
Pin Out - Top
Vie
w
Top View
SOT223
Green
SOT223
4306
ZVN
YWW
ZVN43066 STG
ZVN4306G
Document number: DS33369 Rev. 4 - 2
2 of 5
www.diodes.com
February 2015
© Diodes Incorporated
ZVN
4306
G
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage V
D
SS
60 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current I
D
2.1 A
Pulsed Drain Current (Note 6) I
DM
15 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 5) T
A
=+25°C P
D
3 W
Operating and Storage Temperature Range T
J
,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note
7
)
Drain-Source Breakdown Voltage BV
DSS
60 - - V V
GS
= 0V, I
D
= 1mA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
- - 10
100
µA
µA
V
DS
= 60V, V
GS
= 0V
V
DS
= 48V, V
GS
= 0V, T
A
= +125°C
Gate-Source Leakage I
GSS
- - ±20 nA V
GS
= ±20V, V
DS
= 0V
On-State Drain Current I
D(
ON
)
12 - - A V
GS
= 10V, V
DS
= 10V
ON CHARACTERISTICS (Note
7
)
Gate Threshold Voltage V
GS(
TH
)
1.3 - 3.0 V V
DS
= V
GS
, I
D
= 1mA
Static Drain-Source On-Resistance R
DS(ON)
- 0.22
0.32
0.33
0.45 V
GS
= 10V, I
D
= 3.0A
V
GS
= 5V, I
D
= 1.5A
Forward Transconductance g
fs
0.7 - - S V
DS
= 25V, I
D
= 3.0A
DYNAMIC CHARACTERISTIC
S (Note
8
)
Input Capacitance C
iss
- - 350 pF V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- - 140 pF
Reverse Transfer Capacitance C
rss
- - 30 pF
Turn-On Delay Time t
D(
ON
)
- - 8 ns
V
DD
= 25V, I
D
= 3A, V
GEN
= 10V,
R
GS
= 50
Turn-On Rise Time t
R
- - 25 ns
Turn-Off Delay Time t
D(
OFF
)
- - 30 ns
Turn-Off Fall Time t
F
- - 16 ns
Notes: 5. For a device mounted on 50mm x 50mm x 1.6mm FR-4 PCB with high coverage of single sided 2oz copper, in still air condition.
6. Device mounted on minimum recommended pad layout test board, 10µs pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
ZVN4306G 12 11 1D ‘Nmbwofiflm o VGS: 20V12V10V 9V 9V 7V SV SV 4V 3V 26 24 esrrw 22 2 0 1 V8 1 ,6 1 ,4 1 ,2 1 '0 0,3 Roslom 1 1 Vc&10V |D=3Ai \ 90 ves=vns ID-1mA 1 cm Threshold Voltage Vssmn 06 750-25 a 25 50 75 100125150175200225, us 35V V65: 3V 35V 5V 6V 1!: 02468101214161820 mom VD|k as 0123456789101112
ZVN4306G
Document number: DS33369 Rev. 4 - 2
3 of 5
www.diodes.com
February 2015
© Diodes Incorporated
ZVN
4306
G
Typical Characteristics
g
fs
, Transconductance (S)
Figure 6. Gate Charge vs. Gate-source Voltage
R
DS(ON)
, Drain Source On-Resistance (
)
I
D
, Drain Current (A)
Figure 2. On-resistance vs. drain current
I
D
, Drain Current (A)
V
D
S
, Drain Source Voltage (V)
Figure 1. Saturation Characteristics
I
D
(ON)
, Drain Current (A)
Figure 4. Transconductance vs. Drain Current
Normalised R
DS(ON)
and V
GS(TH)
T
J
, Junction Temperature (°C)
Figure 3. Normalised R
DS(ON)
and V
GS(TH)
vs. Temperature
C, Capacitance (pF)
V
DS
, Drain Source Voltage (V)
Figure 5. Capacitance vs. Drain-source Voltage
V
GS
, Gate Source Voltage (V)
Q, Charge (nC)
ZVN43066 “5-‘ “<-‘ .704“="">
ZVN4306G
Document number: DS33369 Rev. 4 - 2
4 of 5
www.diodes.com
February 2015
© Diodes Incorporated
ZVN
4306
G
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT223
Dim
Min
Max
Typ
A
1.55 1.65 1.60
A1
0.010
0.15 0.05
b
0.60 0.80 0.70
b1
2.90 3.10 3.00
C
0.20 0.30 0.25
D
6.45 6.55 6.50
E
3.45 3.55 3.50
E1
6.90 7.10 7.00
e
- - 4.60
e1
- - 2.30
L
0.85 1.05 0.95
Q
0.84 0.94 0.89
All Dimensions in mm
Dimensions
Value (in mm)
C
2.30
C1
6.40
X
1.20
X1
3.30
Y
1.60
Y1
1.60
Y2
8.00
ZVN43066
ZVN4306G
Document number: DS33369 Rev. 4 - 2
5 of 5
www.diodes.com
February 2015
© Diodes Incorporated
ZVN
4306
G
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for
use provided in the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
www.diodes.com

Products related to this Datasheet

MOSFET N-CH 60V 2.1A SOT223
MOSFET N-CH 60V 2.1A SOT223
MOSFET N-CH 60V 2.1A SOT223