GSOT(03-36) Datasheet by Vishay Semiconductor Diodes Division

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VISHAY. H U” ® 5 U L ROHS cowum ‘ mmezu FREE 6 El www.vi5hay.com/doc?99912 Ll Ll SPICE so Mode‘s Mode‘s ESDprotchan'fiwshay com www.v\shay,com/doc?91000
GSOT03 to GSOT36
www.vishay.com Vishay Semiconductors
Rev. 2.8, 17-Apr-2019 1Document Number: 85807
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Single-Line ESD Protection in SOT-23
MARKING (example only)
YYY = type code (see table below)
XX = date code
DESIGN SUPPORT TOOLS AVAILABLE
FEATURES
Single-line ESD protection device
ESD immunity acc. IEC 61000-4-2
± 30 kV contact discharge
± 30 kV air discharge
ESD capability according to AEC-Q101:
human body model: class H3B: > 8 kV
Space saving SOT-23 package
•e3 - Sn
AEC-Q101 qualified available
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
20421
12
3
20512
1
20357
YYY
XX
XX
3
3
D
D
3
D
3D Models
Models
ORDERING INFORMATION
PART
NUMBER
(EXAMPLE)
ENVIRONMENTAL AND QUALITY CODE PACKAGING CODE
ORDERING CODE
(EXAMPLE)
AEC-Q101
QUALIFIED
RoHS-COMPLIANT +
LEAD (Pb)-FREE TIN
PLATED
3K PER 7" REEL
(8 mm TAPE),
15K/BOX = MOQ
10K PER 13" REEL
(8 mm TAPE),
10K/BOX = MOQ
STANDARD GREEN
GSOT05- E 3 -08 GSOT05-E3-08
GSOT05- G 3 -08 GSOT05-G3-08
GSOT05- H E 3 -08 GSOT05-HE3-08
GSOT05- H G 3 -08 GSOT05-HG3-08
GSOT05- E 3 -18 GSOT05-E3-18
GSOT05- G 3 -18 GSOT05-G3-18
GSOT05- H E 3 -18 GSOT05-HE3-18
GSOT05- H G 3 -18 GSOT05-HG3-18
PACKAGE DATA
DEVICE
NAME
PACKAGE
NAME
TYPE
CODE
ENVIRONMENTAL
STATUS WEIGHT
MOLDING
COMPOUND
FLAMMABILITY
RATING
MOISTURE
SENSITIVITY LEVEL SOLDERING CONDITIONS
GSOT03 SOT-23 03 Standard 8.8 mg UL 94 V-0 MSL level 1
(according J-STD-020) Peak temperature max. 260 °C
03G Green 8.1 mg
GSOT04 SOT-23 04 Standard 8.8 mg UL 94 V-0 MSL level 1
(according J-STD-020) Peak temperature max. 260 °C
04G Green 8.1 mg
GSOT05 SOT-23 05 Standard 8.8 mg UL 94 V-0 MSL level 1
(according J-STD-020) Peak temperature max. 260 °C
05G Green 8.1 mg
GSOT08 SOT-23 08 Standard 8.8 mg UL 94 V-0 MSL level 1
(according J-STD-020) Peak temperature max. 260 °C
08G Green 8.1 mg
GSOT12 SOT-23 12 Standard 8.8 mg UL 94 V-0 MSL level 1
(according J-STD-020) Peak temperature max. 260 °C
12G Green 8.1 mg
GSOT15 SOT-23 15 Standard 8.8 mg UL 94 V-0 MSL level 1
(according J-STD-020) Peak temperature max. 260 °C
15G Green 8.1 mg
GSOT24 SOT-23 24 Standard 8.8 mg UL 94 V-0 MSL level 1
(according J-STD-020) Peak temperature max. 260 °C
24G Green 8.1 mg
GSOT36 SOT-23 36 Standard 8.8 mg UL 94 V-0 MSL level 1
(according J-STD-020) Peak temperature max. 260 °C
36G Green 8.1 mg
ESDprotecnan@wshay com www.v\shay,com/doc?91000
GSOT03 to GSOT36
www.vishay.com Vishay Semiconductors
Rev. 2.8, 17-Apr-2019 2Document Number: 85807
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ABSOLUTE MAXIMUM RATINGS GSOT03
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot IPPM 30 A
Peak pulse power Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot PPP 369 W
ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD
± 30 kV
Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV
Operating temperature Junction temperature TJ-40 to +125 °C
Storage temperature TSTG -55 to +150 °C
ABSOLUTE MAXIMUM RATINGS GSOT04
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot IPPM 30 A
Peak pulse power Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot PPP 429 W
ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD
± 30 kV
Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV
Operating temperature Junction temperature TJ-40 to +125 °C
Storage temperature TSTG -55 to +150 °C
ABSOLUTE MAXIMUM RATINGS GSOT05
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot IPPM 30 A
Peak pulse power Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot PPP 480 W
ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD
± 30 kV
Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV
Operating temperature Junction temperature TJ-40 to +125 °C
Storage temperature TSTG -55 to +150 °C
ABSOLUTE MAXIMUM RATINGS GSOT08
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot IPPM 18 A
Peak pulse power Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot PPP 345 W
ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD
± 30 kV
Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV
Operating temperature Junction temperature TJ-40 to +125 °C
Storage temperature TSTG -55 to +150 °C
ESDprotecnan@wshay com www.v\shay,com/doc?91000
GSOT03 to GSOT36
www.vishay.com Vishay Semiconductors
Rev. 2.8, 17-Apr-2019 3Document Number: 85807
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ABSOLUTE MAXIMUM RATINGS GSOT12
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot IPPM 12 A
Peak pulse power Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot PPP 312 W
ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD
± 30 kV
Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV
Operating temperature Junction temperature TJ-40 to +125 °C
Storage temperature TSTG -55 to +150 °C
ABSOLUTE MAXIMUM RATINGS GSOT15
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot IPPM 8A
Peak pulse power Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot PPP 230 W
ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD
± 30 kV
Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV
Operating temperature Junction temperature TJ-40 to +125 °C
Storage temperature TSTG -55 to +150 °C
ABSOLUTE MAXIMUM RATINGS GSOT24
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot IPPM 5A
Peak pulse power Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot PPP 235 W
ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD
± 30 kV
Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV
Operating temperature Junction temperature TJ-40 to +125 °C
Storage temperature TSTG -55 to +150 °C
ABSOLUTE MAXIMUM RATINGS GSOT36
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot IPPM 3.5 A
Peak pulse power Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot PPP 248 W
ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD
± 30 kV
Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV
Operating temperature Junction temperature TJ-40 to +125 °C
Storage temperature TSTG -55 to +150 °C
VISHAY. ESDgrUIectIon®wshay Com www.v\shay.CUm/doc?91000
GSOT03 to GSOT36
www.vishay.com Vishay Semiconductors
Rev. 2.8, 17-Apr-2019 4Document Number: 85807
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BiAs-MODE (1-line Bidirectional Asymmetrical protection mode)
With the GSOTxx one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to ground and
pin 3 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is
between 0 V (ground level) and the specified maximum reverse working voltage (VRWM) the protection diode between pin 1 and
pin 3 offers a high isolation to the ground line. The protection device behaves like an open switch.
As soon as any positive transient voltage signal exceeds the breakdown voltage level of the protection diode, the diode
becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The
clamping voltage (VC) is defined by the breakdown voltage (VBR) level plus the voltage drop at the series impedance (resistance
and inductance) of the protection diode.
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction
through the protection diode. The low forward voltage (VF) clamps the negative transient close to the ground level.
Due to the different clamping levels in forward and reverse direction the GSOTxx clamping behavior is Bidirectional and
Asymmetrical (BiAs).
ELECTRICAL CHARACTERISTICS GSOT03 (Tamb = 25 °C unless otherwise specified)
between pin 3 and pin 1
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected Nchannel --1lines
Reverse stand-off voltage Max. reverse working voltage VRWM --3.3V
Reverse voltage at IR = 100 μA VR3.3 - - V
Reverse current at VR = 3.3 V IR- - 100 μA
Reverse breakdown voltage at IR = 1 mA VBR 44.65.5V
Reverse clamping voltage at IPP = 1 A VC
-5.77.5V
at IPP = IPPM = 30 A - 10 12.3 V
Forward clamping voltage at IPP = 1 A VF
-11.2V
at IPP = IPPM = 30 A - 4.5 - V
Capacitance at VR = 0 V; f = 1 MHz CD
- 420 600 pF
at VR = 1.6 V; f = 1 MHz - 260 - pF
ELECTRICAL CHARACTERISTICS GSOT04 (Tamb = 25 °C unless otherwise specified)
between pin 3 and pin 1
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected Nchannel --1lines
Reverse stand-off voltage Max. reverse working voltage VRWM --4V
Reverse voltage at IR = 20 μA VR4--V
Reverse current at VR = 4 V IR--20μA
Reverse breakdown voltage at IR = 1 mA VBR 56.17 V
Reverse clamping voltage at IPP = 1 A VC
-7.59 V
at IPP = IPPM = 30 A - 11.2 14.3 V
Forward clamping voltage at IPP = 1 A VF
-11.2V
at IPP = IPPM = 30 A - 4.5 - V
Capacitance at VR = 0 V; f = 1 MHz CD
- 310 450 pF
at VR = 2 V; f = 1 MHz - 200 - pF
20422
L1
12
3
Ground
BiAs
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GSOT03 to GSOT36
www.vishay.com Vishay Semiconductors
Rev. 2.8, 17-Apr-2019 5Document Number: 85807
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL CHARACTERISTICS GSOT05 (Tamb = 25 °C unless otherwise specified)
between pin 3 and pin 1
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected Nchannel --1lines
Reverse stand-off voltage Max. reverse working voltage VRWM --5V
Reverse voltage at IR = 10 μA VR5--V
Reverse current at VR = 5 V IR--10μA
Reverse breakdown voltage at IR = 1 mA VBR 66.88 V
Reverse clamping voltage at IPP = 1 A VC
-78.7V
at IPP = IPPM = 30 A - 12 16 V
Forward clamping voltage at IPP = 1 A VF
-11.2V
at IPP = IPPM = 30 A - 4.5 - V
Capacitance at VR = 0 V; f = 1 MHz CD
- 260 350 pF
at VR = 2.5 V; f = 1 MHz - 150 - pF
ELECTRICAL CHARACTERISTICS GSOT08 (Tamb = 25 °C unless otherwise specified)
between pin 3 and pin 1
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected Nchannel --1lines
Reverse stand-off voltage Max. reverse working voltage VRWM --8V
Reverse voltage at IR = 5 μA VR8--V
Reverse current at VR = 8 V IR--5μA
Reverse breakdown voltage at IR = 1 mA VBR 91011V
Reverse clamping voltage at IPP = 1 A VC
- 10.7 13 V
at IPP = IPPM = 18 A - 15.2 19.2 V
Forward clamping voltage at IPP = 1 A VF
-11.2V
at IPP = IPPM = 18 A - 3 - V
Capacitance at VR = 0 V; f = 1 MHz CD
- 160 250 pF
at VR = 4 V; f = 1 MHz - 80 - pF
ELECTRICAL CHARACTERISTICS GSOT12 (Tamb = 25 °C unless otherwise specified)
between pin 3 and pin 1
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected Nchannel --1lines
Reverse stand-off voltage Max. reverse working voltage VRWM --12V
Reverse voltage at IR = 1 μA VR12 - - V
Reverse current at VR = 12 V IR--1μA
Reverse breakdown voltage at IR = 1 mA VBR 13.5 15 16.5 V
Reverse clamping voltage at IPP = 1 A VC
- 15.4 18.7 V
at IPP = IPPM = 12 A - 21.2 26 V
Forward clamping voltage at IPP = 1 A VF
-11.2V
at IPP = IPPM = 12 A - 2.2 - V
Capacitance at VR = 0 V; f = 1 MHz CD
- 115 150 pF
at VR = 6 V; f = 1 MHz - 50 - pF
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GSOT03 to GSOT36
www.vishay.com Vishay Semiconductors
Rev. 2.8, 17-Apr-2019 6Document Number: 85807
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL CHARACTERISTICS GSOT15 (Tamb = 25 °C unless otherwise specified)
between pin 3 and pin 1
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected Nchannel --1lines
Reverse stand-off voltage Max. reverse working voltage VRWM --15V
Reverse voltage at IR = 1 μA VR15 - - V
Reverse current at VR = 15 V IR--1μA
Reverse breakdown voltage at IR = 1 mA VBR 16.5 18 20 V
Reverse clamping voltage at IPP = 1 A VC
- 19.4 23.5 V
at IPP = IPPM = 8 A - 24.8 28.8 V
Forward clamping voltage at IPP = 1 A VF
-11.2V
at IPP = IPPM = 8 A - 1.8 - V
Capacitance at VR = 0 V; f = 1 MHz CD
- 90 120 pF
at VR = 7.5 V; f = 1 MHz - 35 - pF
ELECTRICAL CHARACTERISTICS GSOT24 (Tamb = 25 °C unless otherwise specified)
between pin 3 and pin 1
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected Nchannel --1lines
Reverse stand-off voltage Max. reverse working voltage VRWM --24V
Reverse voltage at IR = 1 μA VR24 - - V
Reverse current at VR = 24 V IR--1μA
Reverse breakdown voltage at IR = 1 mA VBR 27 30 33 V
Reverse clamping voltage at IPP = 1 A VC
-3441V
at IPP = IPPM = 5 A - 41 47 V
Forward clamping voltage at IPP = 1 A VF
-11.2V
at IPP = IPPM = 5 A - 1.4 - V
Capacitance at VR = 0 V; f = 1 MHz CD
-6580pF
at VR = 12 V; f = 1 MHz - 20 - pF
ELECTRICAL CHARACTERISTICS GSOT36 (Tamb = 25 °C unless otherwise specified)
between pin 3 and pin 1
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected Nchannel --1lines
Reverse stand-off voltage Max. reverse working voltage VRWM --36V
Reverse voltage at IR = 1 μA VR36 - - V
Reverse current at VR = 36 V IR--1μA
Reverse breakdown voltage at IR = 1 mA VBR 39 43 47 V
Reverse clamping voltage at IPP = 1 A VC
-4960V
at IPP = IPPM = 3.5 A - 59 71 V
Forward clamping voltage at IPP = 1 A VF
-11.2V
at IPP = IPPM = 3.5 A - 1.3 - V
Capacitance at VR = 0 V; f = 1 MHz CD
-5265pF
at VR = 18 V; f = 1 MHz - 12 - pF
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GSOT03 to GSOT36
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Rev. 2.8, 17-Apr-2019 7Document Number: 85807
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Forward Current IF vs. Forward Voltage VF
Fig. 2 - Typical Reverse Voltage VR vs. Reverse Current IR
Fig. 3 - Typical Reverse Voltage VR vs. Reverse Current IR
Fig. 4 - ESD Discharge Current Waveform
According to IEC 61000-4-2 (330 / 150 pF)
Fig. 5 - 8/20 μs Peak Pulse Current Waveform
According to IEC 61000-4-5
Fig. 6 - Typical Clamping Voltage vs. Peak Pulse Current
10
100
1000
10000
0.001
10
100
0.5 0.6 0.7 0.8 0.9
Axis Title
1st line
2nd line
2nd line
1
0.1
0.01
VF (V)
IF (mA)
10
100
1000
10000
0
45
50
0.01 100 10 000
Axis Title
1st line
2nd line
2nd line
1
40
35
30
25
20
15
10
5
Pin 3 to 1
IR (µA)
VR (V)
TJ = 25 °C
GSOT12
GSOT15
GSOT08
GSOT24
GSOT36
10
100
1000
10000
0
7
8
0.01 100 10 000
Axis Title
1st line
2nd line
2nd line
1
6
5
4
3
2
1
Pin 3 to 1
IR (µA)
VR (V)
TJ = 25 °C GSOT03
GSOT04
GSOT05
10
100
1000
10000
0
20
40
60
80
100
120
-10 0 10 20 30 40 50 60 70 80 90 100
Axis Title
1st line
2nd line
2nd line
IESD (%)
t (ns)
Rise time = 0.7 ns to 1 ns
53
27
10
100
1000
10000
0
20
40
60
80
100
0 10203040
Axis Title
1st line
2nd line
2nd line
IPPM (%)
t (µs)
8 µs to 100 %
20 µs to 50 %
10
0
5
10
15
20
25
30
35
40
0 20406080100
2nd line
VC-TLP (V)
ITLP (A)
Transmission line pulse (TLP):
GSOT15
GSOT12
GSOT08
GSOT05
GSOT04
GSOT03
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GSOT03 to GSOT36
www.vishay.com Vishay Semiconductors
Rev. 2.8, 17-Apr-2019 8Document Number: 85807
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Typical Clamping Voltage vs. Peak Pulse Current
Fig. 8 - Typical Peak Clamping Voltage vs. Peak Pulse Current
Fig. 9 - Typical Peak Clamping Voltage vs. Peak Pulse Current
Fig. 10 - Typical Capacitance vs. Reverse Voltage
0
20
40
60
80
100
120
0 20406080100
2nd line
VC-TLP (V)
ITLP (A)
Transmission line pulse (TLP):
GSOT36
GSOT24
100
1000
10000
1st line
2nd line
100
5
10
15
20
25
30
0204060
2nd line
VC(V)
IPP (A)
Measured according IEC 61000-4-5
(8/20 µs - wave form)
GSOT12
GSOT15
GSOT08
GSOT04
GSOT05
GSOT03
Axis Title
100
1000
10000
1st line
2nd line
100
5
10
15
20
25
30
35
40
45
50
55
60
65
0246810
2nd line
VC(V)
IPP (A)
Measured according IEC 61000-4-5
(8/20 µs - wave form)
GSOT36
GSOT24
Axis Title
10
100
1000
10000
10
100
1000
0.01 0.1 1 10 100
Axis Title
1st line
2nd line
2nd line
CD(pF)
VR(V)
f = 1 MHz
GSOT12
GSOT15
GSOT08
GSOT04
GSOT05
GSOT03
GSOT24
GSOT36
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GSOT03 to GSOT36
www.vishay.com Vishay Semiconductors
Rev. 2.8, 17-Apr-2019 9Document Number: 85807
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters (inches): SOT-23
Foot print recommendation:
Rev. 8 - Date: 23. Sep. 2009
17418
Document no.: 6.541-5014.01-4
0.9 (0.035)
1 (0.039)
0.9 (0.035)
1 (0.039)
1.43 (0.056)
0.45 (0.018)
0.35 (0.014)
2.8 (0.110)
3.1 (0.122)
0.45 (0.018)
0.35 (0.014)
0.45 (0.018)
0.35 (0.014)
0.1 (0.004) max.
2.35 (0.093)
2.6 (0.102)
0.175 (0.007)
0.098 (0.004)
1.15 (0.045)
0.9 (0.035)
1.20 (0.047)
0.95 (0.037) 0.95 (0.037)
2 (0.079)
0.7 (0.028)
0.9 (0.035)
to
0.2 (0.008)
0.3 (0.012)
0.5 (0.020)
0.550 ref. (0.022 ref.)
SOT-23
Top view
Unreeling direction
Orientation in carrier tape
SOT-23
S8-V-3929.01-006 (4)
04.02.2010
22607
— VISHAY. V
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© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED

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