MUN5311DW1T1GOSCT-ND Datasheet by ON Semiconductor

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Transislor (BRT) contains a sitwle Ira tor with a monolithic bias network consi' ing of two re. 'loro a 'eries base r ' or and a buseremiller re, istor. The BRT eliminate. these individual components by integrating them into a single device. The use of a BRT can reduce both . ystem cost and board space. Fealu res - Simpli Circuit Design - Reduces Board Space I Reduces Component Count - s and NSV Prefix tor Automotive and Other Appticotions Requiring Unique Site and Controt Change Requirements: AEGQlOl Qualified and FPAF Capah1e* I These Devices are PbrFree, Halogen Free/BFR Free and are RUI‘IS Compliant MAXIMUM RATINGS (TA = 25°C both polarities or tPNP) a 02 (NPN), unless aiherwtse noted) Rating Symbol Max Unit ColleciotrBase Voltage VCBO 50 Vde ColleciotrEmltier Voltage VCEO 50 Vde Collector Curtent , Continuous lo tau mAdc lnout Forward Voltage Viwwd, 40 Vde lnout Reverse Voltage Viwev] to Vde Stresses exeeeding those listed in the Maximum Ratings table may damage the device. It arty ot these limits are exceeded. oeviee tunctionality should not he assumed. damage may occur and rehaoility may he atteeteo. ORDERING INFORMATION Device Package Shippingt MUNSalt DWlTlG. soreasa aooorrape & Reel SMUNSSttDWthG' MUNSalt DWlTZG. soreasa aooorrape & Reel SMUNSSHDWszG‘ SMUNSBttDWlTSG soreasa mean/rape & Reel NsecmEPvaeTte. soTessa 4,ooorrape & Reel NSVBClMEPDXVSTtG‘ n SEMlCOnduDIOrCflmDOHEnIS lnduslnes. LLC 2am I July, 2013 — Rev. 4 0N Semiconductor® www.0nsemi.com Pu HHH UUU
© Semiconductor Components Industries, LLC, 2014
July, 2018 − Rev. 4 1Publication Order Number:
DTC114EP/D
MUN5311DW1,
NSBC114EPDXV6,
NSBC114EPDP6
Complementary Bias
Resistor Transistors
R1 = 10 kW, R2 = 10 kW
NPN and PNP Transistors with Monolithic
Bias Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable*
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(TA = 25°C both polarities Q1 (PNP) & Q2 (NPN), unless otherwise noted)
Rating Symbol Max Unit
Collector-Base Voltage VCBO 50 Vdc
Collector-Emitter Voltage VCEO 50 Vdc
Collector Current − Continuous IC100 mAdc
Input Forward Voltage VIN(fwd) 40 Vdc
Input Reverse Voltage VIN(rev) 10 Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device Package Shipping
MUN5311DW1T1G,
SMUN5311DW1T1G* SOT−363 3,000/Tape & Reel
MUN5311DW1T2G,
SMUN5311DW1T2G* SOT−363 3,000/Tape & Reel
SMUN5311DW1T3G SOT−363 10,000/Tape & Reel
NSBC114EPDXV6T1G,
NSVBC114EPDXV6T1G* SOT−563 4,000/Tape & Reel
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MARKING DIAGRAMS
PIN CONNECTIONS
11 M G
1
11/L = Specific Device Code
M = Date Code*
G= Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
SOT−363
CASE 419B
SOT−563
CASE 463A
Q1
Q2
(1)(2)(3)
(6)(5)(4)
R1
R2
R2
R1
SOT−963
CASE 527AD L M
1
11 MG
G
1
6
MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6
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2
ORDERING INFORMATION
Device Shipping
Package
NSBC114EPDXV6T5G SOT−563 8,000/Tape & Reel
NSBC114EPDP6T5G SOT−963 8,000/Tape & Reel
For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
MUN5311DW1 (SOT−363) ONE JUNCTION HEATED
Total Device Dissipation
TA = 25°C (Note 1)
(Note 2)
Derate above 25°C (Note 1)
(Note 2)
PD187
256
1.5
2.0
mW
mW/°C
Thermal Resistance, (Note 1)
Junction to Ambient (Note 2) RqJA 670
490
°C/W
MUN5311DW1 (SOT−363) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
TA = 25°C (Note 1)
(Note 2)
Derate above 25°C (Note 1)
(Note 2)
PD250
385
2.0
3.0
mW
mW/°C
Thermal Resistance,
Junction to Ambient (Note 1)
(Note 2)
RqJA 493
325
°C/W
Thermal Resistance,
Junction to Lead (Note 1)
(Note 2)
RqJL 188
208
°C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
NSBC114EPDXV6 (SOT−563) ONE JUNCTION HEATED
Total Device Dissipation
TA = 25°C (Note 1)
Derate above 25°C (Note 1)
PD357
2.9 mW
mW/°C
Thermal Resistance,
Junction to Ambient (Note 1) RqJA 350
°C/W
NSBC114EPDXV6 (SOT−563) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
TA = 25°C (Note 1)
Derate above 25°C (Note 1)
PD500
4.0 mW
mW/°C
Thermal Resistance,
Junction to Ambient (Note 1) RqJA 250
°C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
NSBC114EPDP6 (SOT−963) ONE JUNCTION HEATED
Total Device Dissipation
TA = 25°C (Note 4)
(Note 5)
Derate above 25°C (Note 4)
(Note 5)
PD231
269
1.9
2.2
MW
mW/°C
Thermal Resistance,
Junction to Ambient (Note 4)
(Note 5)
RqJA 540
464
°C/W
NSBC114EPDP6 (SOT−963) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
TA = 25°C (Note 4)
(Note 5)
Derate above 25°C (Note 4)
(Note 5)
PD339
408
2.7
3.3
MW
mW/°C
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MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6
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3
THERMAL CHARACTERISTICS
Characteristic UnitMaxSymbol
NSBC114EPDP6 (SOT−963) BOTH JUNCTION HEATED (Note 3)
Thermal Resistance,
Junction to Ambient (Note 4)
(Note 5)
RqJA 369
306
°C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 ×1.0 Inch Pad.
3. Both junction heated values assume total power is sum of two equally powered channels.
4. FR−4 @ 100 mm2, 1 oz. copper traces, still air.
5. FR−4 @ 500 mm2, 1 oz. copper traces, still air.
MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6
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ELECTRICAL CHARACTERISTICS (TA=25°C both polarities Q1 (PNP) & Q2 (NPN), unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(VCB =50V, I
E=0) ICBO 100 nAdc
Collector-Emitter Cutoff Current
(VCE =50V, I
B=0) ICEO 500 nAdc
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC=0) IEBO 0.5 mAdc
Collector-Base Breakdown Voltage
(IC=10mA, IE=0) V(BR)CBO 50 Vdc
Collector-Emitter Breakdown Voltage (Note 6)
(IC= 2.0 mA, IB=0) V(BR)CEO 50 Vdc
ON CHARACTERISTICS
DC Current Gain (Note 6)
(IC= 5.0 mA, VCE =10V) hFE 35 60
Collector-Emitter Saturation Voltage (Note 6)
(IC= 10 mA, IB= 0.3 mA) VCE(sat) 0.25 V
Input Voltage (Off)
(VCE = 5.0 V, IC= 100 mA) (NPN)
(VCE = 5.0 V, IC= 100 mA) (PNP)
Vi(off)
1.2
1.2
Vdc
Input Voltage (On)
(VCE = 0.2 V, IC= 10 mA) (NPN)
(VCE = 0.2 V, IC= 10 mA) (PNP)
Vi(on)
2.0
2.2
Vdc
Output Voltage (On)
(VCC = 5.0 V, VB= 2.5 V, RL= 1.0 kW)VOL 0.2 Vdc
Output Voltage (Off)
(VCC = 5.0 V, VB= 0.5 V, RL= 1.0 kW)VOH 4.9 Vdc
Input Resistor R1 7.0 10 13 kW
Resistor Ratio R1/R20.8 1.0 1.2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle 2%.
Figure 1. Derating Curve
AMBIENT TEMPERATURE (°C)
1251007550250−25−50
0
50
100
150
200
250
300
PD, POWER DISSIPATION (mW)
150
(1) (2)
(1) SOT−363; 1.0 ×1.0 Inch Pad
(2) SOT−563; Minimum Pad
(3) SOT−963; 100 mm2, 1 oz. Copper Trace
350
400
(3)
MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6
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TYPICAL CHARACTERISTICS − NPN TRANSISTOR
MUN5311DW1, NSBC114EPDXV6
Figure 2. VCE(sat) vs. IC
1002030
IC, COLLECTOR CURRENT (mA)
10
1
0.1 40 50
Figure 3. DC Current Gain
Figure 4. Output Capacitance
1
0.1
0.01
0.001 020 6080
IC, COLLECTOR CURRENT (mA)
1000
100
10 11010
0
IC, COLLECTOR CURRENT (mA)
Figure 5. Output Current vs. Input Voltage
100
10
1
0.1
0.01
0.001 01234
Vin, INPUT VOLTAGE (V)
5678910
Figure 6. Input Voltage vs. Output Current
50
010 203040
3.6
2.8
0.4
1.2
0
VR, REVERSE VOLTAGE (V)
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
IC/IB = 10
TA = −25°C
75°C
25°C
VCE = 10 V
TA = 75°C
−25°C
25°C
hFE, DC CURRENT GAIN
f = 10 kHz
IE = 0 A
TA = 25°C
0.8
1.6
2.0
2.4
3.2
C
ob
, OUTPUT CAPACITANCE (pF)
VO = 5 V
TA = 75°C−25°C
25°C
IC, COLLECTOR CURRENT (mA)
VO = 0.2 V
Vin, INPUT VOLTAGE (V)
TA = 75°C
−25°C
25°C
40
MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6
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TYPICAL CHARACTERISTICS − PNP TRANSISTOR
MUN5311DW1, NSBC114EPDXV6
100
10
1
0.1
0.01
0.001 0
Vin, INPUT VOLTAGE (V)
TA= −25°C
25°C
123456789
0.01 20
IC, COLLECTOR CURRENT (mA)
0.1
1
0406080
1000
11010
0
IC, COLLECTOR CURRENT (mA)
TA=75°C
−25°C
100
10
75°C
50
01020 3040
10
3
1
2
VR, REVERSE VOLTAGE (V)
0
TA= −25°C25°C
75°C
f = 10 kHz
lE = 0 A
TA = 25°C
VO = 5 V
IC/IB=10 VCE = 10 V
0
IC, COLLECTOR CURRENT (mA)
0.1
1
10
100
10 20 30 40 50
TA= −25°C
25°C
75°C
Figure 7. VCE(sat) vs. ICFigure 8. DC Current Gain
Figure 9. Output Capacitance Figure 10. Output Current vs. Input Voltage
Figure 11. Input Voltage vs. Output Current
25°C
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
hFE, DC CURRENT GAIN
10
C
ob
, OUTPUT CAPACITANCE (pF)
4
7
5
6
8
9
IC, COLLECTOR CURRENT (mA)
VO = 0.2 V
Vin, INPUT VOLTAGE (V)
MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6
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TYPICAL CHARACTERISTICS − NPN TRANSISTOR
NSBC114EPDP6
Figure 12. VCE(sat) vs. ICFigure 13. DC Current Gain
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
403020 50100
0.01
0.1
1
1001010.1
1
10
100
1000
Figure 14. Output Capacitance Figure 15. Output Current vs. Input Voltage
VR, REVERSE VOLTAGE (V) Vin, INPUT VOLTAGE (V)
50403020100
0
0.4
0.8
1.2
1.6
2.0
2.4
65743210
0.01
0.1
1
10
100
Figure 16. Input Voltage vs. Output Current
IC, COLLECTOR CURRENT (mA)
4030 5020100
0.1
1
10
100
VCE(sat), COLLECTOR−EMITTER VOLTAGE (V)
hFE, DC CURRENT GAIN
Cob, OUTPUT CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
Vin, INPUT VOLTAGE (V)
IC/IB = 10
150°C
−55°C
25°C
VCE = 10 V
150°C
−55°C
25°C
f = 10 kHz
IE = 0 A
TA = 25°C
VO = 5 V
150°C
−55°C
25°C
VO = 0.2 V
150°C
−55°C
25°C
MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6
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8
TYPICAL CHARACTERISTICS − PNP TRANSISTOR
NSBC114EPDP6
Figure 17. VCE(sat) vs. ICFigure 18. DC Current Gain
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
403020 50100
0.01
0.1
1
100100.1
1
10
100
1000
Figure 19. Output Capacitance Figure 20. Output Current vs. Input Voltage
VR, REVERSE VOLTAGE (V) Vin, INPUT VOLTAGE (V)
50403020100
0
1
2
3
4
6
7
65843210
0.1
1
10
100
Figure 21. Input Voltage vs. Output Current
IC, COLLECTOR CURRENT (mA)
4030 5020100
0.1
1
10
100
VCE(sat), COLLECTOR−EMITTER VOLTAGE (V)
hFE, DC CURRENT GAIN
Cob, OUTPUT CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
Vin, INPUT VOLTAGE (V)
IC/IB = 10
150°C
−55°C
25°C
VCE = 10 V
150°C
−55°C
25°C
f = 10 kHz
IE = 0 A
TA = 25°C
VO = 5 V
150°C
−55°C
25°C
VO = 0.2 V
150°C
−55°C
25°C
0.01
5
7
1
w .JLM TOP VIEW d“ ® DE'IAILA n ma 2m 22.: um nm was f >~ 7W x 4 ECU MT gmxx j M" END VIEW SIDE VIEW RECOMMENDED SOLDERING FOOTFRINT‘ 8X30 fl r-g $66 I] m I] L, 77+77 2.50 m UJ D7, 065% k DIMENSIONS M‘LLIMETERS ‘For addmona‘ Inmrmahcm on aur PbiFree strategy and soldenng detafls‘ p‘ease down‘oad the ON Semwconducmr Smdenng and Meunllng Techniques Refierence Manua‘ SOLDERRMJD,
MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6
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9
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI-
TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
Cddd M
123
A1
A
c
654
E
b
6X DIM MIN NOM MAX
MILLIMETERS
A−− −−− 1.10
A1 0.00 −−− 0.10
ddd
b0.15 0.20 0.25
C0.08 0.15 0.22
D1.80 2.00 2.20
−− −−− 0.043
0.000 −−− 0.004
0.006 0.008 0.010
0.003 0.006 0.009
0.070 0.078 0.086
MIN NOM MAX
INCHES
0.10 0.004
E1 1.15 1.25 1.35
e0.65 BSC
L0.26 0.36 0.46
2.00 2.10 2.20 0.045 0.049 0.053
0.026 BSC
0.010 0.014 0.018
0.078 0.082 0.086
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
0.65
0.66
6X
DIMENSIONS: MILLIMETERS
0.30
PITCH
2.50
6X
RECOMMENDED
TOP VIEW
SIDE VIEW END VIEW
bbb H
B
SEATING
PLANE
DETAIL A E
A2 0.70 0.90 1.00 0.027 0.035 0.039
L2 0.15 BSC 0.006 BSC
aaa 0.15 0.006
bbb 0.30 0.012
ccc 0.10 0.004
A-B D
aaa C
2X 3 TIPS
D
E1
D
e
A
2X
aaa H D
2X
D
L
PLANE
DETAIL A
H
GAGE
L2
C
ccc C
A2
6X
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PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A
ISSUE G
HE
DIM MIN NOM MAX
MILLIMETERS
A0.50 0.55 0.60
b0.17 0.22 0.27
C
D1.50 1.60 1.70
E1.10 1.20 1.30
e0.5 BSC
L0.10 0.20 0.30
1.50 1.60 1.70
0.020 0.021 0.023
0.007 0.009 0.011
0.059 0.062 0.066
0.043 0.047 0.051
0.02 BSC
0.004 0.008 0.012
0.059 0.062 0.066
MIN NOM MAX
INCHES
eM
0.08 (0.003) X
b6 5 PL
A
C
−X−
−Y−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
D
E
Y
12 3
45
L
6
HE
0.08 0.12 0.18 0.003 0.005 0.007
1.35
0.0531
0.5
0.0197
ǒmm
inchesǓ
SCALE 20:1
0.5
0.0197
1.0
0.0394
0.45
0.0177
0.3
0.0118
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
“fl? 4‘ I I 5 w NEH a Jj p D fisw‘fwzuT VWI"V\WTJ‘ k TLC fl 7 J
MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6
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11
PACKAGE DIMENSIONS
SOT−963
CASE 527AD
ISSUE E
DIM MIN NOM MAX
MILLIMETERS
A0.34 0.37 0.40
b0.10 0.15 0.20
C0.07 0.12 0.17
D0.95 1.00 1.05
E0.75 0.80 0.85
e0.35 BSC
0.95 1.00 1.05
HE
E
D
C
A
HE
123
456
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
X
Y
TOP VIEW SIDE VIEW
e
b
X0.08
6X
Y
BOTTOM VIEW
6X
0.35
PITCH
1.20
0.20
DIMENSIONS: MILLIMETERS
RECOMMENDED
PACKAGE
OUTLINE
MOUNTING FOOTPRINT*
L0.19 REF
L2 0.05 0.10 0.15
L
6X
L2
6X 6X
0.35
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your loc
al
Sales Representative