DMN6040SVT Datasheet by Diodes Incorporated

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DMN6040SVT
Document number: DS35562 Rev. 10 - 2
1 of 7
www.diodes.com March 2012
© Diodes Incorporated
DMN6040S
V
T
ADVANCE INFORMATION
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS R
DS(on) max ID
TA = 25°C
60V 44mΩ @ VGS = 10V 5.0A
60mΩ @ VGS = 4.5V 4.3A
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
DC-DC Converters
Power management functions
Backlighting
Features and Benefits
100% Unclamped Inductive Switch (UIS) test in production
Low Input Capacitance
Low On-Resistance
Fast Switching Speed
Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.013 grams (approximate)
Ordering Information (Note 3)
Part Number Case Packaging
DMN6040SVT-7 TSOT26 3,000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2010 2011 2012 2013 2014 2015 2016
Code X Y Z A B C D
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
TSOT26
Top View Top View
Pin Configuration
32D = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
32D
YM
D
D
G
D
D
S
1
2
3
6
5
4
Source
Body
Diode
Gate
Drain
Equivalent Circuit
mDESW SV ENT POWER TR DMN604OSVT Document number 0535562 Rev 1072 DRAW CURRENT 2 a! 7 www.diodes.com : mm mm H : 295 Smg‘c mm
DMN6040SVT
Document number: DS35562 Rev. 10 - 2
2 of 7
www.diodes.com March 2012
© Diodes Incorporated
DMN6040S
V
T
ADVANCE INFORMATION
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGSS ±20 V
Continuous Drain Current (Note 5) VGS = 10V
Steady
State TA = 25°C
TA = 70°C ID 5.0
4.0 A
t<10s TA = 25°C
TA = 70°C ID 6.3
5.0 A
Continuous Drain Current (Note 5) VGS = 5V
Steady
State TA = 25°C
TA = 70°C ID 4.3
3.4 A
t<10s TA = 25°C
TA = 70°C ID 5.4
4.3 A
Maximum Body Diode Forward Current (Note 5) IS 2.1 A
Pulsed Drain Current (10μs pulse, duty cycle = 1%) IDM 30 A
Avalanche Current (Note 6) L = 0.1mH IAR 14.2 A
Avalanche Energy (Note 6) L = 0.1mH EAR 10 mJ
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 4) TA = 25°C PD 1.2 W
TA = 70°C 0.75
Thermal Resistance, Junction to Ambient (Note 4) Steady state RθJA 106 °C/W
t<10s 69 °C/W
Total Power Dissipation (Note 5) TA = 25°C PD 1.8 W
TA = 70°C 1.1
Thermal Resistance, Junction to Ambient (Note 5) Steady state RθJA 68 °C/W
t<10s 44 °C/W
Thermal Resistance, Junction to Case (Note 5) R
θ
JC 20 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
0
20
40
60
80
100
t1, PULSE DURATION TIME (sec)
Fig. 1 Single Pulse Maximum Power Dissipation
0.001 0.01 0.1 1 10 100 1,0000.0001
P
,
P
EAK
T
R
ANSIEN
T
P
O
IWE
R
(W)
(PK)
Single Pulse
R = 72C/W
R = r * R
T - T = P * R
θ
θθ
θ
JA
JA(t) (t) JA
JA JA(t)
°
0.1 1 10 100
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 2 SOA, Safe Operation Area
DS
0.01
0.1
1
10
100
I, D
R
AI
N
C
U
R
R
E
N
T
(A)
D
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10s
W
µ
§ \STANC LR )‘ TR S‘ENT THER SV DMN604OSVT Document number 0535562 Rev 1072 3 a! 7 www.dlodes.com
DMN6040SVT
Document number: DS35562 Rev. 10 - 2
3 of 7
www.diodes.com March 2012
© Diodes Incorporated
DMN6040S
V
T
ADVANCE INFORMATION
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 3 Transient Thermal Resistance
0.001
0.01
0.1
1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
R = r * R
θ
JA(t) (t)
θ
θ
JA
JA
R = 72C/W
Duty Cycle, D = t1/t2
°
D = 0.5
D = 0.7
D = 0.9
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BVDSS 60 V VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current IDSS 100 nA
VDS = 60V, VGS = 0V
Gate-Source Leakage IGSS ±100 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage VGS
(
th
)
1 3 V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance RDS (ON) 30 44 mΩ VGS = 10V, ID = 4.3A
35 60 VGS = 4.5V, ID = 4A
Forward Transfer Admittance |Yfs| 4.5 S VDS = 10V, ID = 4.3A
Diode Forward Voltage VSD 0.7 1.2 V
VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance Ciss 1287
pF VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance Coss 57
Reverse Transfer Capacitance Crss 44
Gate Resistance RG 1.2 Ω VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = 10V) Q
g
22.4
nC VDS = 30V, ID = 4.3A
Total Gate Charge (VGS = 4.5V) Q
g
10.4
Gate-Source Charge Q
g
s 4.9
Gate-Drain Charge Q
g
d 3.0
Turn-On Delay Time tD
(
on
)
6.6
nS VGS = 10V, VDD = 30V, RG = 6Ω,
ID = 4.3A
Turn-On Rise Time t
8.1
Turn-Off Delay Time tD
(
off
)
20.1
Turn-Off Fall Time tf 4.0
Body Diode Reverse Recovery Time tr
r
18 nS IS = 4.3A, dI/dt = 100A/μs
Body Diode Reverse Recovery Charge Qr
r
11.9 nC IS = 4.3A, dI/dt = 100A/μs
Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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DMN6040SVT
Document number: DS35562 Rev. 10 - 2
4 of 7
www.diodes.com March 2012
© Diodes Incorporated
DMN6040S
V
T
ADVANCE INFORMATION
0 0.5 1.0 1.5 2.0 2.5 3.0
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 4 Typical Output Characteristic
DS
0
4
8
12
16
20
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
01 2 3 45
V , GATE-SOURCE VOLTAGE
GS
Fig. 5 Typical Transfer Characteristics
0
4
8
12
16
20
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
V = 5.0V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
04 8121620
I , DRAIN-SOURCE CURRENT
D
Fig. 6 Typical On-Resistance vs.
Drain Current and Gate Voltage
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
Ω
V = 4.5V
GS
V = 10V
GS
0
0.02
0.04
0.06
0.08
0.10
012345678910
V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 7 Typical On-Resistance vs.
Drain Current and Gate Voltage
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
Ω
I= 4.5A
D
I= 3.5A
D
04 8121620
I , DRAIN CURRENT
D
Fig. 8 Typical On-Resistance vs.
Drain Current and Temperature
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
Ω
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
T = -55°C
A
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
2.2
2.4
2.0
1.0
0
50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Fig. 9 On-Resistance Variation with Temperature
J
°
R
, D
R
AI
N
-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
V = 4.5V
I= 5A
GS
D
V=V
I= 10A
GS
D
10
§ \STANC RA‘NASOURCE ONAR \\ VSOURC CURR NT GAT THRESHO DVOLTAG m DMN604OSVT Document number 0535562 Rev 1072 , GATE THRESHO D VOLTAG SV // // 10,000 1,000 100 10
DMN6040SVT
Document number: DS35562 Rev. 10 - 2
5 of 7
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© Diodes Incorporated
DMN6040S
V
T
ADVANCE INFORMATION
-50-25 0 255075100125150
T , JUNCTION TEMPERATURE ( C)
Fig. 10 On-Resistance Variation with Temperature
J
°
0
0.02
0.04
0.06
0.08
0.10
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
Ω
V = 4.5V
I = 500mA
GS
D
V= V
I = 200mA
GS
D
2.5
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Fig. 11 Gate Threshold Variation vs. Ambient Temperature
J
°
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(th)
I= 1mA
D
I = 250µA
D
0 0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 12 Diode Forward Voltage vs. Current
0
4
8
12
16
20
I, S
O
U
R
C
E
C
U
R
R
EN
T
(V)
S
T = 25°C
A
051015202530
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 13 Typical Junction Capacitance
C , JUNCTION CAPACITANCE (pF)
T
C
iss
C
oss
C
rss
f = 1MHz
0 5 10 15 20 25
V
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS
Q(nC)
g
, TOTAL GATE CHARGE
Fig. 14 Gate Charge
V = 30V
I= A
DS
D
4.3
I 7777777777 1 LE 5 7 : .—» 1W FI%F’ 4‘ u I D Hill DMN604OSVT 6047 Document number 0535562 Rev 1072 www.diodes.com
DMN6040SVT
Document number: DS35562 Rev. 10 - 2
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© Diodes Incorporated
DMN6040S
V
T
ADVANCE INFORMATION
Package Outline Dimensions
Suggested Pad Layout
TSOT26
Dim Min Max Typ
A — 1.00 —
A1 0.01 0.10 —
A2 0.84 0.90 —
D — — 2.90
E — — 2.80
E1 — — 1.60
b 0.30 0.45 —
c 0.12 0.20 —
e — — 0.95
e1 — — 1.90
L 0.30 0.50 —
L2 — — 0.25
θ 0° 8° 4°
θ1 4° 12° —
All Dimensions in mm
Dimensions Value (in mm)
C 0.950
X 0.700
Y 1.000
Y1 3.199
c
A1
L
E1 E
A2
D
e1
e
6x b
θ
4x 1
θ
L2
A
Y1
C C
X (6x)
Y (6x)
mDESW SV DMN604OSVT Document number 0535562 Rev 1072 7 a! 7 www.diodes.com
DMN6040SVT
Document number: DS35562 Rev. 10 - 2
7 of 7
www.diodes.com March 2012
© Diodes Incorporated
DMN6040S
V
T
ADVANCE INFORMATION
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
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