NTR4501N Datasheet by ON Semiconductor

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© Semiconductor Components Industries, LLC, 2016
June, 2019 Rev. 15
1Publication Order Number:
NTR4501N/D
NTR4501N, NVR4501N
MOSFET – Power, Single,
N-Channel, SOT-23
20 V, 3.2 A
Features
Leading Planar Technology for Low Gate Charge / Fast Switching
2.5 V Rated for Low Voltage Gate Drive
SOT23 Surface Mount for Small Footprint
NVR Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These Devices are PbFree and are RoHS Compliant
Applications
Load/Power Switch for Portables
Load/Power Switch for Computing
DCDC Conversion
MAXIMUM RATINGS (TJ= 25°C unless otherwise stated)
Parameter Symbol Value Unit
DraintoSource Voltage VDSS 20 V
GatetoSource Voltage VGS ±12 V
Continuous Drain
Current (Note 1)
Steady
State
TA = 25°CID3.2 A
TA = 85°C 2.4 A
Steady State Power
Dissipation (Note 1)
Steady State PD1.25 W
Pulsed Drain Current tp = 10 msIDM 10.0 A
Operating Junction and Storage Temperature TJ,
Tstg
55 to
150
°C
Continuous Source Current (Body Diode) IS1.6 A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL260 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
JunctiontoAmbient (Note 1) RqJA 100 °C/W
JunctiontoAmbient (Note 2) RqJA 300
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surfacemounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surfacemounted on FR4 board using the minimum recommended pad size.
G
D
S
Device Package Shipping
ORDERING INFORMATION
20 V
88 mW @ 2.5 V
70 mW @ 4.5 V
RDS(on) Typ
3.6 A
ID Max
(Note 1)
V(BR)DSS
SOT23
CASE 318
STYLE 21
MARKING DIAGRAM &
PIN ASSIGNMENT
2
1
3
NChannel
3.1 A
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
NTR4501NT1G SOT23
(PbFree)
3000 / Tape & Reel
TR1 = Device Code for NTR4501N
VR1 = Device Code for NVR4501N
M = Date Code*
G= PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
3
Drain
1
Gate
2
Source
xR1 MG
G
www.onsemi.com
NVR4501NT1G 3000 / Tape & ReelSOT23
(PbFree)
www.cnsemi.com
NTR4501N, NVR4501N
www.onsemi.com
2
Electrical Characteristics (TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Units
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (Note 3) V(BR)DSS VGS = 0 V, ID = 250 mA20 24.5 V
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ22 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V TJ = 25°C 1.5 mA
VDS = 16 V TJ = 85°C 10 mA
GatetoSource Leakage Current IGSS VDS = 0 V, VGS = ±12 V ±100 nA
ON CHARACTERISTICS
Gate Threshold Voltage (Note 3) VGS(TH) VGS = VDS, ID = 250 mA0.65 1.2 V
Negative Threshold
Temperature Coefficient
VGS(TH)/TJ2.3 mV/°C
DraintoSource On Resistance
RDS(on)
VGS = 4.5 V, ID = 3.6 A 70 80
mW
VGS = 2.5 V, ID = 3.1 A 88 105
Forward Transconductance gFS VDS = 5.0 V, ID = 3.6 A 9 S
CHARGES AND CAPACITANCES
Input Capacitance Ciss
VGS = 0 V, f = 1.0 MHz,
VDS = 10 V
200
pF
Output Capacitance Coss 80
Reverse Transfer Capacitance Crss 50
Total Gate Charge QG(TOT)
VGS = 4.5 V, VDS = 10 V,
ID = 3.6 A
2.4 6.0
nC
GatetoSource Gate Charge QGS 0.5
GatetoDrain Charge QGD 0.6
SWITCHING CHARACTERISTICS (Note 4)
TurnOn Delay Time td(on)
VGS = 4.5 V, VDS = 10 V,
ID = 3.6 A, RG = 6.0 W
6.5 13
ns
Rise Time tr12 24
TurnOff Delay Time td(off) 12 24
Fall Time tf3 6
SOURCEDRAIN DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V, ISD = 1.6 A 0.8 1.2 V
Reverse Recovery Time tRR
VGS = 0 V,
dIS/dt = 100 A/ms,
IS = 1.6 A
7.1
ns
Charge Time ta5
Discharge Time tb1.9
Reverse Recovery Charge QRR 3.0 nC
3. Pulse Test: Pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
// : 125%: [Z . \ www.cnsemi.com
NTR4501N, NVR4501N
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3
VDS 10 V
VGS = 1.8 V
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
012345678910
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
Figure 1. OnRegion Characteristics
VGS = 10 V
VGS = 1.6 V
VGS = 1.4 V
VGS = 3.0 V
VGS = 2.0 V TJ = 25°C
8
0.5 1.0 1.5 2.0 2.5
VGS, GATETOSOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
Figure 2. Transfer Characteristics
TJ = 25°C
TJ = 55°C
TJ = 125°C
0.25
123 6
VGS, GATETOSOURCE VOLTAGE (VOLTS)
RDS(on), DRAINTOSOURCE RESISTANCE (W)
Figure 3. OnResistance versus
GatetoSource Voltage
ID = 3.2 A
TJ = 25°C
0.05
0.06
0.07
0.08
0.09
23 456
ID, DRAIN CURRENT (AMPS)
RDS(on), DRAINTOSOURCE RESISTANCE (W)
Figure 4. OnResistance versus Drain
Current and Gate Voltage
1.4
50 25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
RDS(on), DRAINTOSOURCE
RESISTANCE (NORMALIZED)
Figure 5. OnResistance Variation with
Temperature
ID = 3.2 A
VGS = 4.5 V
1.0
10
1000
2 6 10 14 18
100
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DraintoSource Leakage
Current versus Voltage
VGS = 0 V
TJ = 150°C
TJ = 100°C
IDSS, LEAKAGE (nA)
VGS = 2.5 V
VGS = 4.5 V
150
VGS = 2.2 V
VGS = 1.2 V
6
5
4
3
2
1
0
0.20
0.15
0.10
0.05 45
0.10
TJ = 25°C
1.2
1.0
0.8
0.6
2012 1648
7
250 3 '3 Lu 0 o > E 200 E ,_ 6 150 5 E5 8 5 100 0‘ o a 50 ,_ 0155 5 o «a 0 2,5 5 75 m 12.5 15 17,5 20 $5 DRAIN-TO-SOURCE VOLTAGE iVOLTSi Figure 7. Capacitance Var' tion Figur 100 4 a 7 a. 2 $ 3 A 10 '2 E E 2: Lu E 8 2 ’— m ' 1 E 8 1 m _"'J 0 1 10 100 0.3 He‘ GATE RESISTANCE ((2) Figure 9. Resislive Switching Time Variation versus Gale Resistance www.cnsemi.com A
NTR4501N, NVR4501N
www.onsemi.com
4
td(on)
0
350
0 2.5 5 7.5 10 15 20
DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Crss
Coss
Ciss
VGS = 0 V
TJ = 25°C
C, CAPACITANCE (pF)
0
1.0
2.0
4.0
5.0
0 0.5 1.0 1.5 2.0
QG, TOTAL GATE CHARGE (nC)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 8. GatetoSource and DraintoSource
Voltage versus Total Charge
TJ = 25°C
ID = 3.2 A
QT
QGD
QGS
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
1
100
1 10 100
10
t, TIME (ns)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
VDS = 10 V
ID = 3.2 A
VGS = 4.5 V
tr
td(off)
tf
RG, GATE RESISTANCE (W)
0
1
2
3
4
0.3 0.6 0.9
VSD, SOURCETODRAIN VOLTAGE (VOLTS)
IS, SOURCE CURRENT (AMPS)
Figure 10. Diode Forward Voltage versus
Current
VGS = 0 V
TJ = 25°C
12.5 17.5
300
250
200
150
100
50
3.0
2.5 3.0
15
12
9
6
3
0
VGS
VDS
0.1
1.2
0.1
1
10
100
1000
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 100
0
0.1
0.2
0.02
D = 0.5
0.05
0.01
SINGLE PULSE
PULSE TIME, tp (s)
Figure 11. Thermal Response
TRANSIENT THERMAL RESISTANCE,
RqJA (°C/W)
NTR4501N, NVR4501N
www.onsemi.com
5
PACKAGE DIMENSIONS
SOT23 (TO236)
CASE 31808
ISSUE AR
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c
0−−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW
END VIEW
SOLDERING FOOTPRINT
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
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