MJD122/127, NJVMJD122/127 Datasheet by ON Semiconductor

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© Semiconductor Components Industries, LLC, 2013
September, 2016 − Rev. 15 1Publication Order Number:
MJD122/D
MJD122, NJVMJD122
(NPN), MJD127,
NJVMJD127 (PNP)
Complementary Darlington
Power Transistor
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications.
Features
Lead Formed for Surface Mount Applications in Plastic Sleeves
Surface Mount Replacements for 2N6040−2N6045 Series,
TIP120−TIP122 Series, and TIP125−TIP127 Series
Monolithic Construction With Built−in Base−Emitter Shunt Resistors
High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings:
Human Body Model, 3B > 8000 V
Machine Model, C > 400 V
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant MARKING DIAGRAM
A = Assembly Location
Y = Year
WW = Work Week
x = 2 or 7
G = Pb−Free Package
DPAK
CASE 369C
STYLE 1
AYWW
J12xG
SILICON
POWER TRANSISTOR
8 AMPERES
100 VOLTS, 20 WATTS
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COLLECTOR 2, 4
BASE
1
EMITTER 3
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
ORDERING INFORMATION
MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP)
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2
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 100 Vdc
Collector−Base Voltage VCB 100 Vdc
Emitter−Base Voltage VEB 5 Vdc
Collector Current
Continuous
Peak
IC8
16
Adc
Base Current IB120 mAdc
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
PD20
0.16
W
W/°C
Total Power Dissipation (Note 1)
@ TA = 25°C
Derate above 25°C
PD1.75
0.014 W
W/°C
Operating and Storage Junction Temperature Range TJ, Tstg 65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 6.25 °C/W
Thermal Resistance, Junction−to−Ambient (Note1) RqJA 71.4 °C/W
1. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
Tc TA SURFACE
MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP)
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3
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 30 mAdc, IB = 0) VCEO(sus) 100 Vdc
Collector Cutoff Current
(VCE = 50 Vdc, IB = 0) ICEO 10 mAdc
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0) ICBO 10 mAdc
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0) IEBO 2 mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 4 Adc, VCE = 4 Vdc)
(IC = 8 Adc, VCE = 4 Vdc)
hFE 1000
100 12,000
Collector−Emitter Saturation Voltage
(IC = 4 Adc, IB = 16 mAdc)
(IC = 8 Adc, IB = 80 mAdc)
VCE(sat)
2
4
Vdc
Base−Emitter Saturation Voltage (Note 2)
(IC = 8 Adc, IB = 80 mAdc) VBE(sat) 4.5 Vdc
Base−Emitter On Voltage
(IC = 4 Adc, VCE = 4 Vdc) VBE(on) 2.8 Vdc
DYNAMIC CHARACTERISTICS
Current−Gain−Bandwidth Product
(IC = 3 Adc, VCE = 4 Vdc, f = 1 MHz) |hfe|4 MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
MJD127, NJVMJD127
MJD122, NJVMJD122
Cob
300
200
pF
Small−Signal Current Gain
(IC = 3 Adc, VCE = 4 Vdc, f = 1 kHz) hfe 300 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
Figure 1. Power Derating
25
25
T, TEMPERATURE (°C)
050 75 100 125 150
20
15
10
5
PD, POWER DISSIPATION (WATTS)
2.5
0
2
1.5
1
0.5
TATC
TA
SURFACE
MOUNT
TC
VEHsaU @ ‘c/‘B : 250 v @V :w HE : 250
MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP)
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VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (AMP)
500
0.2
5000
2000
10,000
hFE, DC CURRENT GAIN
0.1 0.7
3000
0.5 1
20,000
1000
23 5
3
IB, BASE CURRENT (mA)
2.6
2.2
1.8
1.4
0.3 0.5 1 7352
1
IC, COLLECTOR CURRENT (AMP)
2
1.5
V, VOLTAGE (VOLTS)
3
2.5
1
0.5
0.2 30.1 0.70.3 1 5
10 20 30
200
300
0.3 7 10
0.7
0.5 7
21
0
PNP MJD127 NPN MJD122
IC, COLLECTOR CURRENT (AMP)
500
0.2
5000
2000
10,000
hFE, DC CURRENT GAIN
VCE = 4 V
TJ = 150°C
7000
0.1 0.7
25°C
-55°C
3000
0.5 1
20,000
700
1000
23 5
3
IB, BASE CURRENT (mA)
2.6
2.2
1.8
1.4
0.3 0.5 1 735
4 A
IC = 2 A
2
TJ = 25°C
1
IC, COLLECTOR CURRENT (AMP)
2
1.5
V, VOLTAGE (VOLTS)
3
2.5
1
0.5
TJ = 25°C
VBE(sat) @ IC/IB = 250
VBE @ VCE = 4 V
VCE(sat) @ IC/IB = 250
0.2 30.1 0.70.3 1 5
10 20 30
Figure 2. DC Current Gain
Figure 3. Collector Saturation Region
Figure 4. “On” Voltages
200
300
0.3 7 10
0.7
0.5 7
210
6 A
VCE = 4 V
TJ = 150°C
25°C
-55°C
TJ = 25°C
4 A
IC = 2 A 6 A
TJ = 25°C
VBE @ VCE = 4 V
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
TYPICAL ELECTRICAL CHARACTERISTICS
5:0 m ‘50)0 755°C to 25©C 5:0 to firm UVerVEE FORWARD 0W cm vBE 5C0 to ‘50)
MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP)
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5
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
IC, COLLECTOR CURRENT (AMP)
0.2
*IC/IB hFE/3
0.1
-55°C to 25°C
123 10
104
VBE, BASE-EMITTER VOLTAGE (VOLTS)
10-1
0+0.4
, COLLECTOR CURRENT (A)μIC
103
102
101
100
-0.2 -0.4 -0.6
TJ = 150°C
100°C
REVERSE FORWARD
25°C
VCE = 30 V
105
+0.6 +0.2 -0.8 -1 -1.2 -1.4
104
VBE, BASE-EMITTER VOLTAGE (VOLTS)
10-1
, COLLECTOR CURRENT (A)μIC
103
102
101
100
105
+5
-5
qVB for VBE 25°C to 150°C
qVC for VCE(sat)
Figure 5. Temperature Coefficients
VR, REVERSE VOLTAGE (VOLTS)
Cib
30 1 5 20 100
TJ = 25°C
300
50
70
100
0.1 2 10 50
PNP
NPN
0.50.2
Figure 6. Collector Cut−Off Region
Figure 7. Small−Signal Current Gain
1
f, FREQUENCY (kHz)
100
210
500
5000
TC = 25°C
VCE = 4 Vdc
IC = 3 Adc
3000
55020 100
10,000
200
300
200 500 1000
PNP MJD127 NPN MJD122
-4
-3
-2
-1
0
+4
+3
+2
+1
0.50.3 75
IC, COLLECTOR CURRENT (AMP)
0.20.1 1 2 30.50.3 75
2000
1000
10
50
20
30 PNP
NPN
200
Figure 8. Capacitance
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
+5
-5
-4
-3
-2
-1
0
+4
+3
+2
+1
0.7 10
0-0.4 +0.2 +0.4 +0.6-0.6 -0.2 +0.8 +1 +1.2 +1.4
hfe , SMALL-SIGNAL CURRENT GAIN
C, CAPACITANCE (pF)
-55°C to 25°C
25°C to 150°C
*IC/IB hFE/3
25°C to 150°C
-55°C to 25°C
25°C to 150°C
-55°C to 25°C
*qVC for VCE(sat)
qVB for VBE
REVERSE FORWARD
VCE = 30 V
TJ = 150°C
100°C
25°C
Cob
TYPICAL ELECTRICAL CHARACTERISTICS
MSDS‘OflUSED BELOW \thoflmA Z V2 \PPROX 7 7 7 w v 04v V‘EV F—p’i 25“: |m£|flns FORQANDMfl‘ IS D‘SCONNECTED DUTVCVCLE:I% ANDV2:u run NPN TESI cwcuw REVERSE ALLPOLAR Figure 9. Swikching Times Tesl Circui I 07 05 0 a 0.2 0 2 0.1 u 1 0.05 07 05 um ,_ z u_-I m z < u:="" ,_="" 0..="" 2="" ,_="" o="" 0..="" le="" le="" 0..="" “3="" single="" pulse="" n="" n="" n="" 002="" thermal="" hesistan="" ce="" 1nohmalized)="" 00‘="" 0.01="" 002003="" 0,05="" 01="" 0.2="" 03="" 0,5="" figu="" 500="" u="" 100="" n="">
MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP)
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t, TIME OR PULSE WIDTH (ms)
1
0.01 100
0
0.3
0.2
0.07
r(t), EFFECTIVE TRANSIENT
RqJC(t) = r(t) RqJC
RqJC = 6.25°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.01
THERMAL RESISTANCE (NORMALIZED)
0.7
0.5
0.1
0.05
0.03
0.02
0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500
0.2
SINGLE PULSE
D = 0.5
0.05
0.1 0.5 30.3
0.2 0.7 1
5
IC, COLLECTOR CURRENT (AMP)
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
t, TIME (s)μ
3
2
0.7
0.5
0.3
0.2
ts
tf
tr
td @ VBE(off) = 0 V
PNP
NPN
Figure 9. Switching Times Test Circuit Figure 10. Switching Times
0.1
1
10752
Figure 11. Thermal Response
V2
A
PPROX
+8 V
0 8 k
SCOPE
VCC
-30 V
RC
51
FOR td AND tr, D1 IS DISCONNECTED
AND V2 = 0
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
25 ms
tr, tf 10 ns
DUTY CYCLE = 1%
+ 4 V
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB 100 mA
MSD6100 USED BELOW IB 100 mA
V1
A
PPROX
-12 V
TUT
RB
D1 120
0.07
0.05
0.1
0.01
IC, COLLECTOR CURRENT (AMP)
5
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.3
100
5
2
0.5
0.2 BONDING WIRE LIMIT
THERMAL LIMIT
TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
10 507
TJ = 150°C
100m
σ
1ms
dc
0.1
1
3
15
20
3020 70
CURVES APPLY BELOW RATED VCEO
5ms
Figure 12. Maximum Forward Bias
Safe Operating rea
321
10
0.05
0.02
0.03
500m
σ
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 12 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
< 150_C. TJ(pk) may be calculated from the data in
Figure 11. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP)
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7
Figure 13. Darlington Schematic
BASE
EMITTER
COLLECTOR
8 k 120
PNP
BASE
EMITTER
COLLECTOR
8 k 120
NPN
ORDERING INFORMATION
Device Package Type Shipping
MJD122G DPAK
(Pb−Free) 75 Units / Rail
MJD122T4G DPAK
(Pb−Free) 2,500 / Tape & Reel
NJVMJD122T4G* DPAK
(Pb−Free) 2,500 / Tape & Reel
MJD127G DPAK
(Pb−Free) 75 Units / Rail
MJD127T4G DPAK
(Pb−Free) 2,500 / Tape & Reel
NJVMJD127T4G* DPAK
(Pb−Free) 2,500 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable
MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP)
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8
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
b
D
E
b3
L3
L4b2
M
0.005 (0.13) C
c2
A
c
C
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
D0.235 0.245 5.97 6.22
E0.250 0.265 6.35 6.73
A0.086 0.094 2.18 2.38
b0.025 0.035 0.63 0.89
c2 0.018 0.024 0.46 0.61
b2 0.028 0.045 0.72 1.14
c0.018 0.024 0.46 0.61
e0.090 BSC 2.29 BSC
b3 0.180 0.215 4.57 5.46
L4 −−− 0.040 −− 1.01
L0.055 0.070 1.40 1.78
L3 0.035 0.050 0.89 1.27
Z0.155 −−− 3.93 −−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
12 3
4
5.80
0.228
2.58
0.102
1.60
0.063
6.20
0.244
3.00
0.118
6.17
0.243
ǒmm
inchesǓ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
H0.370 0.410 9.40 10.41
A1 0.000 0.005 0.00 0.13
L1 0.114 REF 2.90 REF
L2 0.020 BSC 0.51 BSC
A1
H
DETAIL A
SEATING
PLANE
A
B
C
L1
L
H
L2 GAUGE
PLANE
DETAIL A
ROTATED 90 CW5
eBOTTOM VIEW
Z
BOTTOM VIEW
SIDE VIEW
TOP VIEW
ALTERNATE
CONSTRUCTIONS
NOTE 7
Z
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