MCR703A Series 0N Semiconductor® Dnfl
© Semiconductor Components Industries, LLC, 2009
March, 2009 Rev. 11
1Publication Order Number:
MCR703A/D
MCR703A Series
Preferred Device
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
PNPN devices designed for high volume, low cost consumer
applications such as temperature, light and speed control; process and
remote control; and warning systems where reliability of operation is
critical.
Features
Small Size
Passivated Die Surface for Reliability and Uniformity
Low Level Triggering and Holding Characteristics
Recommend Electrical Replacement for C106
Surface Mount Package Case 369C
To Obtain “DPAK” in Straight Lead Version (Shipped in Sleeves):
Add ’1’ Suffix to Device Number, i.e., MCR706A1
Epoxy Meets UL 94 V0 @ 0.125 in
ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
PbFree Packages are Available
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Max Unit
Peak Repetitive OffState Voltage (Note 1)
(TC = 40 to +110°C, Sine Wave, 50 to 60 Hz,
RGK = 1 k) MCR703A
MCR706A
MCR708A
VDRM,
VRRM 100
400
600
V
Peak Non-Repetitive OffState Voltage
(Sine Wave, 50 to 60 Hz, RGK = 1 k,
TC = 40 to +110°C) MCR703A
MCR706A
MCR708A
VRSM
150
450
650
V
OnState RMS Current
(180° Conduction Angles; TC = 90°C)
IT(RMS) 4.0 A
Average OnState Current (180° Conduction
Angles) TC = 40 to +90°C
TC = +100°C
IT(AV) 2.6
1.6
A
Non-Repetitive Surge Current
(1/2 Sine Wave, 60 Hz, TJ = 110°C)
(1/2 Sine Wave, 1.5 ms, TJ = 110°C)
ITSM 25
35
A
Circuit Fusing (t = 8.3 msec) I2t 2.6 A2sec
Forward Peak Gate Power
(Pulse Width 1.0 sec, TC = 90°C)
PGM 0.5 W
Forward Average Gate Power
(t = 8.3 msec, TC = 90°C)
PG(AV) 0.1 W
Forward Peak Gate Current
(Pulse Width 1.0 sec, TC = 90°C)
IGM 0.2 A
Operating Junction Temperature Range TJ40 to +110 °C
Storage Temperature Range Tstg 40 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
SCRs
4.0 AMPERES RMS
100 600 VOLTS
K
G
A
PIN ASSIGNMENT
1
2
3
Anode
Cathode
Gate
4 Anode
Preferred devices are recommended choices for future use
and best overall value.
DPAK
CASE 369C
STYLE 5
MARKING
DIAGRAMS
12
3
4YWW
CR
70xAG
DPAK3
CASE 369D
STYLE 5
1
23
4
YWW
CR
70xAG
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
Y = Year
WW = Work Week
70xA = Device Code
x = 3, 6 or 8
G=PbFree Package
MCR703A Series
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2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, JunctiontoCase RJC 3.0 °C/W
Thermal Resistance, JunctiontoAmbient (Note 2) RJA 80 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds TL260 °C
2. Case 369C when surface mounted on minimum pad sizes recommended.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM; RGK = 1 k)T
C = 25°C
TC = 110°C
IDRM, IRRM
10
200
A
ON CHARACTERISTICS
Peak Forward “On” Voltage
(ITM = 8.2 A Peak, Pulse Width = 1 to 2 ms, 2% Duty Cycle)
VTM 2.2 V
Gate Trigger Current (Continuous dc) (Note 3) (VAK = 12 Vdc, RL = 24 )
TC = 25°C
TC = 40°C
IGT
25
75
300
A
Gate Trigger Voltage (Continuous dc) (Note 3) TC = 25°C
(VAK = 12 Vdc, RL = 24 )T
C = 40°C
VGT
0.8
1.0
V
Gate Non-Trigger Voltage (Note 3) (VAK = 12 Vdc, RL = 100 , TC = 110°C) VGD 0.2 − − V
Holding Current
(VAK = 12 Vdc, RGK = 1 k) TC = 25°C
(Initiating Current = 20 mA) TC = 40°C
IH
5.0
10
mA
Peak Reverse Gate Blocking Voltage (IGR = 10 A) VRGM 10 12.5 18 V
Peak Reverse Gate Blocking Current (VGR = 10 V) IRGM 1.2 A
Total Turn-On Time (Source Voltage = 12 V, RS = 6 k)
(ITM = 8.2 A, IGT = 2 mA, Rated VDRM) (Rise Time = 20 ns, Pulse Width = 10 s)
tgt 2.0 s
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of OffState Voltage
(VD = Rated VDRM, RGK = 1 k, Exponential Waveform, TC = 110°C)
dv/dt 10 V/s
Repetitive Critical Rate of Rise of OnState Current
(Cf = 60 Hz, IPK = 30 A, PW = 100 s, diG/dt = 1 A/s)
di/dt 100 A/s
3. RGK current not included in measurement.
ORDERING INFORMATION
Device Package Type Package Shipping
MCR703AT4 DPAK 369C 2500 Tape & Reel
MCR703AT4G DPAK 369C
(PbFree)
2500 Tape & Reel
MCR706AT4 DPAK 369C 2500 Tape & Reel
MCR706AT4G DPAK 369C
(PbFree)
2500 Tape & Reel
MCR708A DPAK 369C 75 Units / Rail
MCR708AG DPAK 369C
(PbFree)
75 Units / Rail
MCR708A1 DPAK3 369D 75 Units / Rail
MCR708A1G DPAK3 369D
(PbFree)
75 Units / Rail
MCR708AT4 DPAK 369C 2500 Tape & Reel
MCR708AT4G DPAK 369C
(PbFree)
2500 Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MCR703A Series
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3
+ Current
+ Voltage
VTM
IDRM at VDRM
IH
Symbol Parameter
VDRM Peak Repetitive OffState Forward Voltage
IDRM Peak Forward Blocking Current
VRRM Peak Repetitive OffState Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak OnState Voltage
IHHolding Current
Voltage Current Characteristic of SCR
Anode +
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode
Forward Blocking Region
IRRM at VRRM
(off state)
30°
60°
Figure 1. RMS Current Derating Figure 2. OnState Power Dissipation
Figure 3. OnState Characteristics Figure 4. Transient Thermal Response
5.00
IT(RMS), RMS ON-STATE CURRENT (AMPS)
110
105
IT(RMS), RMS ON-STATE CURRENT (AMPS)
5.00
1.0
0
3.0 4.00.5
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
100
10
1.0
0.1
t, TIME (ms)
1.00.1
1.0
0.1
0.01
3.5
TC, MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)
P
I
r(t), TRANSIENT RESISTANCE (NORMALIZED)
100
95
3.01.0 2.0 4.0 4.01.0 2.0 3.0
2.0
3.0
4.0
1.0 1.5 2.0 2.5 10 100 1000 10,000
°
5.0
, AVERAGE POWER DISSIPATION (WATTS)
(AV)
T, INSTANTANEOUS ON-STATE CURRENT (AMPS)
4.5
ZJC(t) = RJC(t)r(t)
120°
180°
DC
30°
60°
90°
120°
180°
DC
Maximum @ TJ = 110°C
Maximum @ TJ = 25°C
Typical @ TJ = 25°C
90°
MCR703A Series
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4
110-40
TJ, JUNCTION TEMPERATURE (°C)
2.0
1.5
IH, HOLDING CURRENT (mA)
I
0.5
0
20-20 0 40
, LATCHING CURRENT (mA)
L
1.0
60 80 100 110-40
TJ, JUNCTION TEMPERATURE (°C)
2.0
1.5
0.5
0
20-20 0 40
1.0
60 80 100
TJ, JUNCTION TEMPERATURE (°C)
1.0
0
0.5
VGT, GATE TRIGGER VOLTAGE (VOLTS)
-20 40-40 0 20 10060 80 110
Figure 5. Typical Gate Trigger Current versus
Junction Temperature
-20 40-40
TJ, JUNCTION TEMPERATURE (°C)
35
30
25
20
15
0
, GATE TRIGGER CURRENT ( A)IGT
20 10060 80 110
Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature
Figure 7. Typical Holding Current versus
Junction Temperature
Figure 8. Typical Latching Current versus
Junction Temperature
MCR703A Series
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5
PACKAGE DIMENSIONS
DPAK
CASE 369C01
ISSUE A
D
A
K
B
R
V
S
F
L
G
2 PL
M
0.13 (0.005) T
E
C
U
J
H
TSEATING
PLANE
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.235 0.245 5.97 6.22
B0.250 0.265 6.35 6.73
C0.086 0.094 2.19 2.38
D0.027 0.035 0.69 0.88
E0.018 0.023 0.46 0.58
F0.037 0.045 0.94 1.14
G0.180 BSC 4.58 BSC
H0.034 0.040 0.87 1.01
J0.018 0.023 0.46 0.58
K0.102 0.114 2.60 2.89
L0.090 BSC 2.29 BSC
R0.180 0.215 4.57 5.45
S0.025 0.040 0.63 1.01
U0.020 −−− 0.51 −−−
V0.035 0.050 0.89 1.27
Z0.155 −−− 3.93 −−−
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
123
4
5.80
0.228
2.58
0.101
1.6
0.063
6.20
0.244
3.0
0.118
6.172
0.243
ǒmm
inchesǓ
SCALE 3:1
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 5:
PIN 1. GATE
2. ANODE
3. CATHODE
4. ANODE
J 8 a 5%
MCR703A Series
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6
PACKAGE DIMENSIONS
DPAK3
CASE 369D01
ISSUE B
123
4
V
SA
K
T
SEATING
PLANE
R
B
F
G
D3 PL
M
0.13 (0.005) T
C
E
J
H
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.235 0.245 5.97 6.35
B0.250 0.265 6.35 6.73
C0.086 0.094 2.19 2.38
D0.027 0.035 0.69 0.88
E0.018 0.023 0.46 0.58
F0.037 0.045 0.94 1.14
G0.090 BSC 2.29 BSC
H0.034 0.040 0.87 1.01
J0.018 0.023 0.46 0.58
K0.350 0.380 8.89 9.65
R0.180 0.215 4.45 5.45
S0.025 0.040 0.63 1.01
V0.035 0.050 0.89 1.27
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
Z
Z0.155 −−− 3.93 −−−
STYLE 5:
PIN 1. GATE
2. ANODE
3. CATHODE
4. ANODE
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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PUBLICATION ORDERING INFORMATION
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81357733850
MCR703A/D
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Phone: 3036752175 or 8003443860 Toll Free USA/Canada
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