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Designing with UnitedSiC FETs

UnitedSiC present two new SiC FETs, with RDS(ON) levels of 7mohm at 650V and 10mohm at 1200V, both delivering unprecedented levels of performance and efficiency for use in high-power.

3/5/2020 9:25:20 PM

Part List

ImageManufacturer Part NumberDescriptionAvailable QuantityView Details
MOSFET N-CH 650V 120A TO247-4UF3SC065007K4SMOSFET N-CH 650V 120A TO247-4946 - ImmediateView Details