Single IGBTs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	IGBT Type	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IKW30N60DTPXKSA1 IGBT TRENCH FS 600V 53A TO247-3 Infineon Technologies	3,959 In Stock	1 : $4.68000 Tube	TRENCHSTOP™	Tube	Not For New Designs	Trench Field Stop	600 V	53 A	90 A	1.8V @ 15V, 30A	200 W	710µJ (on), 420µJ (off)	Standard	130 nC	15ns/179ns	400V, 30A, 10.5Ohm, 15V	76 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
IGW30N60H3FKSA1 IGBT TRENCH FS 600V 60A TO247-3 Infineon Technologies	918 In Stock	1 : $5.49000 Tube	TRENCHSTOP™	Tube	Active	Trench Field Stop	600 V	60 A	120 A	2.4V @ 15V, 30A	187 W	1.38mJ	Standard	165 nC	21ns/207ns	400V, 30A, 10.5Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3-1
STGP3NC120HD IGBT 1200V 14A TO-220 STMicroelectronics	0 In Stock Check Lead Time	1 : $3.86000 Tube	PowerMESH™	Tube	Active	-	1200 V	14 A	20 A	2.8V @ 15V, 3A	75 W	236µJ (on), 290µJ (off)	Standard	24 nC	15ns/118ns	800V, 3A, 10Ohm, 15V	51 ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220

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Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.