36A (Tc) Single FETs, MOSFETs

Results: 188
Manufacturer
Alpha & Omega Semiconductor Inc.Analog Power Inc.ANBON SEMICONDUCTOR (INT'L) LIMITEDDiodes IncorporatedDiotec SemiconductorFairchild SemiconductorGoford SemiconductorInfineon TechnologiesInternational RectifierIXYSLittelfuse Inc.Microchip Technology
Series
-AlphaMOSC2M™C3M™CoolMOS™CoolMOS™ CFD7CoolSiC™DEEFFRFET®, SuperFET® IIIHEXFET®
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveDiscontinued at Digi-KeyLast Time BuyNot For New DesignsObsolete
FET Type
N-ChannelP-Channel
Technology
GaNFET (Cascode Gallium Nitride FET)GaNFET (Gallium Nitride)MOSFET (Metal Oxide)SiC (Silicon Carbide Junction Transistor)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
20 V30 V40 V55 V60 V65 V100 V150 V200 V250 V280 V300 V
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4V, 10V4.5V, 10V5V, 10V10V10V, 15V15V15V, 18V18V20V-
Rds On (Max) @ Id, Vgs
2.4mOhm @ 20A, 10V2.7mOhm @ 20A, 10V3.2mOhm @ 20A, 10V3.3mOhm @ 15A, 10V3.3mOhm @ 20A, 10V3.6mOhm @ 20A, 10V4.2mOhm @ 14A, 10V4.7mOhm @ 18A, 4.5V8.5mOhm @ 20A, 10V10.8mOhm @ 18A, 10V15mOhm @ 10A, 10V15mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
1.2V @ 1mA2V @ 250µA2.1V @ 250µA2.2V @ 250µA2.3V @ 250µA2.4V @ 250µA2.5V @ 1mA2.5V @ 250µA2.5V @ 300µA2.55V @ 250µA2.6V @ 250µA2.6V @ 700µA
Gate Charge (Qg) (Max) @ Vgs
7.2 nC @ 4.5 V8 nC @ 10 V9.7 nC @ 4.5 V14 nC @ 10 V15.3 nC @ 10 V21 nC @ 10 V22 nC @ 4.5 V24 nC @ 10 V29 nC @ 10 V29.3 nC @ 10 V30 nC @ 10 V30.4 nC @ 15 V
Vgs (Max)
±12V+15V, -4V±16V+18V, -15V+18V, -5V+18V, -8V±18V+19V, -8V+20V, -5V±20V+22V, -10V+23V, -7V+25V, -10V±25V
Input Capacitance (Ciss) (Max) @ Vds
450 pF @ 25 V550 pF @ 10 V660 pF @ 600 V670 pF @ 10 V891 pF @ 30 V950 pF @ 1000 V1000 pF @ 400 V1020 pF @ 600 V1040 pF @ 15 V1060 pF @ 800 V1145 pF @ 800 V1205 pF @ 500 V
FET Feature
-Schottky Diode (Body)
Power Dissipation (Max)
1W (Ta), 40W (Tc)1W (Ta), 65W (Tc)1.2W (Ta), 56W (Tc)1.8W (Ta), 56W (Tc)2W (Ta), 125W (Tc)2W (Ta), 32W (Tc)2.1W (Ta), 41.7W (Tc)2.12W (Ta), 39.06W (Tc)3W (Ta), 60W (Tc)3.12W (Ta), 166W (Tc)3.5W (Ta), 7.8W (Tc)3.8W (Ta), 140W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 155°C (TJ)-55°C ~ 175°C-55°C ~ 175°C (TJ)-55°C ~ 200°C (TJ)-40°C ~ 150°C (TJ)-40°C ~ 175°C (TJ)150°C150°C (TJ)175°C175°C (TJ)-
Grade
-Automotive
Qualification
-AEC-Q101
Mounting Type
Chassis MountSurface MountThrough Hole
Supplier Device Package
4-PQFN (8x8)8-DFN (5x6)8-PDFN (3.1x3.1)8-SOIC8-TSON Advance (3.1x3.1)D2PAKD2PAK-7D3PAKDPAKH2PAK-2H2PAK-7HiP247™
Package / Case
4-PowerTSFN8-PowerSFN8-PowerSMD, Flat Leads8-PowerTDFN8-PowerVDFN8-PowerWDFN8-SOIC (0.154", 3.90mm Width)22-PowerBSOP ModulePLUS-220SMDPowerPAK® SO-8SOT-227-4, miniBLOCTO-220-3
Stocking Options
Environmental Options
Media
Marketplace Product
188Results
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Showing
of 188
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
1,978
In Stock
1 : $1.39000
Cut Tape (CT)
5,000 : $0.39775
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
36A (Tc)
2.5V, 4.5V
4.7mOhm @ 18A, 4.5V
1.2V @ 1mA
65 nC @ 5 V
±12V
4300 pF @ 10 V
-
42W (Tc)
150°C (TJ)
-
-
Surface Mount
8-TSON Advance (3.1x3.1)
8-PowerVDFN
PowerPak SO-8L
SQJ457EP-T1_GE3
MOSFET P-CH 60V 36A PPAK SO-8
Vishay Siliconix
30,180
In Stock
1 : $1.76000
Cut Tape (CT)
3,000 : $0.54344
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
36A (Tc)
4.5V, 10V
25mOhm @ 10A, 10V
2.5V @ 250µA
100 nC @ 10 V
±20V
3400 pF @ 25 V
-
68W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
TO-220AB PKG
IRF540ZPBF
MOSFET N-CH 100V 36A TO220AB
Infineon Technologies
4,046
In Stock
1 : $2.09000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
36A (Tc)
10V
26.5mOhm @ 22A, 10V
4V @ 250µA
63 nC @ 10 V
±20V
1770 pF @ 25 V
-
92W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
TO-220AB PKG
IRL540NPBF
MOSFET N-CH 100V 36A TO220AB
Infineon Technologies
7,236
In Stock
1 : $2.28000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
36A (Tc)
4V, 10V
44mOhm @ 18A, 10V
2V @ 250µA
74 nC @ 5 V
±16V
1800 pF @ 25 V
-
140W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
8-SOIC
SI4154DY-T1-GE3
MOSFET N-CH 40V 36A 8SO
Vishay Siliconix
12,007
In Stock
1 : $2.43000
Cut Tape (CT)
2,500 : $0.79550
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
36A (Tc)
4.5V, 10V
3.3mOhm @ 15A, 10V
2.5V @ 250µA
105 nC @ 10 V
±20V
4230 pF @ 20 V
-
3.5W (Ta), 7.8W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL540NSTRLPBF
MOSFET N-CH 100V 36A D2PAK
Infineon Technologies
32,436
In Stock
1 : $3.14000
Cut Tape (CT)
800 : $1.19280
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
36A (Tc)
4V, 10V
44mOhm @ 18A, 10V
2V @ 250µA
74 nC @ 5 V
±16V
1800 pF @ 25 V
-
3.8W (Ta), 140W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
8-SOIC
SI4497DY-T1-GE3
MOSFET P-CH 30V 36A 8SO
Vishay Siliconix
15,276
In Stock
1 : $3.17000
Cut Tape (CT)
2,500 : $1.12480
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
36A (Tc)
4.5V, 10V
3.3mOhm @ 20A, 10V
2.5V @ 250µA
285 nC @ 10 V
±20V
9685 pF @ 15 V
-
3.5W (Ta), 7.8W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
PG-TDSON-8-1
BSC320N20NS3GATMA1
MOSFET N-CH 200V 36A TDSON-8
Infineon Technologies
17,173
In Stock
1 : $4.94000
Cut Tape (CT)
5,000 : $2.08421
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
36A (Tc)
10V
32mOhm @ 36A, 10V
4V @ 90µA
29 nC @ 10 V
±20V
2350 pF @ 100 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
TO-263AB
IXTA36P15P-TRL
MOSFET P-CH 150V 36A TO263
Littelfuse Inc.
4,674
In Stock
1 : $10.20000
Cut Tape (CT)
800 : $5.09583
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
150 V
36A (Tc)
10V
110mOhm @ 18A, 10V
4.5V @ 250µA
55 nC @ 10 V
±20V
3100 pF @ 25 V
-
300W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-3P
IXTQ36P15P
MOSFET P-CH 150V 36A TO3P
Littelfuse Inc.
345
In Stock
1 : $10.97000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
150 V
36A (Tc)
10V
110mOhm @ 18A, 10V
4.5V @ 250µA
55 nC @ 10 V
±20V
3100 pF @ 25 V
-
300W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-3P
TO-3P-3, SC-65-3
IPW65R099CFD7AXKSA1
IMW120R060M1HXKSA1
SICFET N-CH 1.2KV 36A TO247-3
Infineon Technologies
867
In Stock
1 : $13.20000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
36A (Tc)
15V, 18V
78mOhm @ 13A, 18V
5.7V @ 5.6mA
31 nC @ 18 V
+23V, -7V
1060 pF @ 800 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-3-41
TO-247-3
PG-TO247-4-1
IMZ120R060M1HXKSA1
SICFET N-CH 1.2KV 36A TO247-4
Infineon Technologies
269
In Stock
1 : $13.50000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
36A (Tc)
15V, 18V
78mOhm @ 13A, 18V
5.7V @ 5.6mA
31 nC @ 18 V
+23V, -7V
1060 pF @ 800 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-1
TO-247-4
C2D10120D
C3M0065090D
SICFET N-CH 900V 36A TO247-3
Wolfspeed, Inc.
2,387
In Stock
1 : $26.39000
Tube
Tube
Not For New Designs
N-Channel
SiCFET (Silicon Carbide)
900 V
36A (Tc)
15V
78mOhm @ 20A, 15V
3.5V @ 5mA
30.4 nC @ 15 V
+18V, -8V
660 pF @ 600 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
C2D10120D
C2M0080120D
SICFET N-CH 1200V 36A TO247-3
Wolfspeed, Inc.
1,471
In Stock
1 : $39.46000
Bulk
Bulk
Last Time Buy
N-Channel
SiCFET (Silicon Carbide)
1200 V
36A (Tc)
20V
98mOhm @ 20A, 20V
4V @ 5mA
62 nC @ 5 V
+25V, -10V
950 pF @ 1000 V
-
192W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
8-PowerFlat
STL8N6F7
MOSFET N-CH 60V 36A POWERFLAT
STMicroelectronics
3,544
In Stock
1 : $1.39000
Cut Tape (CT)
3,000 : $0.41750
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
36A (Tc)
10V
25mOhm @ 4A, 10V
4V @ 250µA
8 nC @ 10 V
±20V
450 pF @ 25 V
-
3W (Ta), 60W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerFlat™ (3.3x3.3)
8-PowerVDFN
PowerPAK-SO-8-Single
SQJ457EP-T1_BE3
P-CHANNEL 60-V (D-S) 175C MOSFET
Vishay Siliconix
5,043
In Stock
1 : $1.76000
Cut Tape (CT)
3,000 : $0.54344
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
36A (Tc)
4.5V, 10V
25mOhm @ 10A, 10V
2.5V @ 250µA
100 nC @ 10 V
±20V
3400 pF @ 25 V
-
68W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
7,941
In Stock
1 : $2.99000
Cut Tape (CT)
2,500 : $1.04525
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
36A (Tc)
4.5V, 10V
30mOhm @ 18A, 10V
-
52 nC @ 10 V
±20V
3200 pF @ 10 V
-
1.2W (Ta), 56W (Tc)
175°C (TJ)
-
-
Surface Mount
TO-252 (MP-3ZK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
2,388
In Stock
1 : $3.76000
Cut Tape (CT)
800 : $1.45834
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
36A (Tc)
4.5V, 10V
17mOhm @ 18A, 10V
2.5V @ 1mA
55 nC @ 10 V
±20V
2800 pF @ 10 V
-
1.8W (Ta), 56W (Tc)
175°C (TJ)
-
-
Surface Mount
TO-263
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
914
In Stock
1 : $7.09000
Cut Tape (CT)
5,000 : $3.32741
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
250 V
36A (Tc)
-
-
-
-
±20V
-
-
-
-
-
-
Surface Mount
PG-TSON-8-3
8-PowerTDFN
TO-263AB
IXTA36N30P
MOSFET N-CH 300V 36A TO263
Littelfuse Inc.
1,024
In Stock
1 : $7.46000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
300 V
36A (Tc)
10V
110mOhm @ 18A, 10V
5.5V @ 250µA
70 nC @ 10 V
±30V
2250 pF @ 25 V
-
300W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263AA
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
314
In Stock
1 : $9.15000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
36A (Tc)
10V
60mOhm @ 16.4A, 10V
4.5V @ 860µA
68 nC @ 10 V
±20V
3288 pF @ 400 V
-
171W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO220-3-1
TO-220-3
TO-220-3
IXTP36P15P
MOSFET P-CH 150V 36A TO220AB
Littelfuse Inc.
290
In Stock
1 : $9.98000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
150 V
36A (Tc)
10V
110mOhm @ 18A, 10V
4.5V @ 250µA
55 nC @ 10 V
±20V
3100 pF @ 25 V
-
300W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3
SIHFPS37N50A-GE3
SIHFPS37N50A-GE3
POWER MOSFET SUPER-247, 130 M @
Vishay Siliconix
241
In Stock
1 : $10.02000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
36A (Tc)
10V
130mOhm @ 22A, 10V
4V @ 250µA
180 nC @ 10 V
±30V
5579 pF @ 25 V
-
446W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
SUPER-247™ (TO-274AA)
TO-274AA
PG-TO263-7-12
IMBG120R060M1HXTMA1
SICFET N-CH 1.2KV 36A TO263
Infineon Technologies
1,853
In Stock
1 : $12.95000
Cut Tape (CT)
1,000 : $6.90790
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
36A (Tc)
-
83mOhm @ 13A, 18V
5.7V @ 5.6mA
34 nC @ 18 V
+18V, -15V
1145 pF @ 800 V
-
181W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247_IXFH
IXFH36N50P
MOSFET N-CH 500V 36A TO247AD
Littelfuse Inc.
222
In Stock
1 : $14.64000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
36A (Tc)
10V
170mOhm @ 500mA, 10V
5V @ 4mA
93 nC @ 10 V
±30V
5500 pF @ 25 V
-
540W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247AD (IXFH)
TO-247-3
Showing
of 188

36A (Tc) Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.