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Results: 6
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveObsolete
Drain to Source Voltage (Vdss)
1200 V1700 V
Current - Continuous Drain (Id) @ 25°C
5.3A (Tc)36A (Tc)40A (Tc)72A (Tc)
Rds On (Max) @ Id, Vgs
59mOhm @ 50A, 20V70mOhm @ 50A, 20V98mOhm @ 20A, 20V125mOhm @ 28A, 20V1.4Ohm @ 2A, 20V
Vgs(th) (Max) @ Id
4V @ 10mA4V @ 18mA4V @ 500µA4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 20 V62 nC @ 5 V120 nC @ 20 V188 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds
200 pF @ 1000 V950 pF @ 1000 V2250 pF @ 1000 V3672 pF @ 1000 V
Power Dissipation (Max)
78W (Tc)192W (Tc)277W (Tc)520W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
D2PAK (7-Lead)TO-247-3TO-247-4LTO-263-7
Package / Case
TO-247-3TO-247-4TO-263-7 (Straight Leads)TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
C3M0065090J
C2M1000170J
SICFET N-CH 1700V 5.3A D2PAK
Wolfspeed, Inc.
917
In Stock
1 : $18.91000
Bulk
Bulk
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
5.3A (Tc)
20V
1.4Ohm @ 2A, 20V
4V @ 500µA
13 nC @ 20 V
+25V, -10V
200 pF @ 1000 V
-
78W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK (7-Lead)
TO-263-7 (Straight Leads)
C2D10120D
C2M0080120D
SICFET N-CH 1200V 36A TO247-3
Wolfspeed, Inc.
1,495
In Stock
1 : $43.28000
Bulk
Bulk
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
36A (Tc)
20V
98mOhm @ 20A, 20V
4V @ 5mA
62 nC @ 5 V
+25V, -10V
950 pF @ 1000 V
-
192W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
C2D10120D
C2M0045170D
SICFET N-CH 1700V 72A TO247-3
Wolfspeed, Inc.
441
In Stock
1 : $173.62000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
72A (Tc)
20V
70mOhm @ 50A, 20V
4V @ 18mA
188 nC @ 20 V
+25V, -10V
3672 pF @ 1000 V
-
520W (Tc)
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
C2M0045170P
C2M0045170P
SICFET N-CH 1700V 72A TO247-4
Wolfspeed, Inc.
339
In Stock
1 : $166.83000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
72A (Tc)
20V
59mOhm @ 50A, 20V
4V @ 18mA
188 nC @ 20 V
+25V, -10V
3672 pF @ 1000 V
-
520W (Tc)
-40°C ~ 150°C (TJ)
Through Hole
TO-247-4L
TO-247-4
C3M0065090J-TR
C2M1000170J-TR
SICFET N-CH 1700V 5.3A D2PAK-7
Wolfspeed, Inc.
731
In Stock
1 : $18.91000
Cut Tape (CT)
800 : $9.30550
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
5.3A (Tc)
20V
1.4Ohm @ 2A, 20V
4V @ 500µA
13 nC @ 20 V
+25V, -10V
200 pF @ 1000 V
-
78W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
SICFET N-CH 1700V 40A TO247-4
C2M0080170P
SICFET N-CH 1700V 40A TO247-4
Wolfspeed, Inc.
0
In Stock
450 : $48.19236
Tube
Tube
Obsolete
N-Channel
SiCFET (Silicon Carbide)
1700 V
40A (Tc)
20V
125mOhm @ 28A, 20V
4V @ 10mA
120 nC @ 20 V
+25V, -10V
2250 pF @ 1000 V
-
277W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-4L
TO-247-4
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Single

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.