PowerSO-10 Exposed Bottom Pad Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
STV160NF03LT4 MOSFET N-CH 30V 160A 10POWERSO STMicroelectronics	87 In Stock	600 : $4.78125 Tape & Reel (TR)	STripFET™	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	160A (Tc)	5V, 10V	2.8mOhm @ 80A, 10V	1V @ 250µA	140 nC @ 10 V	±15V	4700 pF @ 25 V	-	210W (Tc)	175°C (TJ)	Surface Mount	10-PowerSO	PowerSO-10 Exposed Bottom Pad
STV300NH02L MOSFET N-CH 24V 200A 10POWERSO STMicroelectronics	0 In Stock	600 : $3.85113 Tape & Reel (TR)	STripFET™ III	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	24 V	200A (Tc)	10V, 5V	1mOhm @ 80A, 10V	2V @ 250µA	109 nC @ 10 V	±20V	7055 pF @ 15 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	10-PowerSO	PowerSO-10 Exposed Bottom Pad
STV160NF02LAT4 MOSFET N-CH 20V 160A 10POWERSO STMicroelectronics	0 In Stock	600 : $4.20750 Tape & Reel (TR)	STripFET™	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	20 V	160A (Tc)	5V, 10V	2.7mOhm @ 80A, 10V	1V @ 250µA	175 nC @ 10 V	±15V	5500 pF @ 15 V	-	210W (Tc)	175°C (TJ)	Surface Mount	10-PowerSO	PowerSO-10 Exposed Bottom Pad
STV160NF03LAT4 MOSFET N-CH 30V 160A 10POWERSO STMicroelectronics	0 In Stock	600 : $4.20750 Tape & Reel (TR)	STripFET™	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	160A (Tc)	5V, 10V	3mOhm @ 80A, 10V	1V @ 250µA	160 nC @ 10 V	±15V	5350 pF @ 25 V	-	210W (Tc)	175°C (TJ)	Surface Mount	10-PowerSO	PowerSO-10 Exposed Bottom Pad
STV160NF02LT4 MOSFET N-CH 20V 160A 10POWERSO STMicroelectronics	0 In Stock	600 : $4.59000 Tape & Reel (TR)	STripFET™ II	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	20 V	160A (Tc)	5V, 10V	2.5mOhm @ 80A, 10V	1V @ 250µA	160 nC @ 10 V	±15V	4800 pF @ 15 V	-	210W (Tc)	175°C (TJ)	Surface Mount	10-PowerSO	PowerSO-10 Exposed Bottom Pad
STV200N55F3 MOSFET N-CH 55V 200A 10POWERSO STMicroelectronics	0 In Stock	600 : $4.59000 Tape & Reel (TR)	STripFET™	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	200A (Tc)	10V	2.5mOhm @ 75A, 10V	4V @ 250µA	100 nC @ 10 V	±20V	6800 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	10-PowerSO	PowerSO-10 Exposed Bottom Pad
STV240N75F3 MOSFET N-CH 75V 240A 10POWERSO STMicroelectronics	0 In Stock	1 : $9.82000 Cut Tape (CT) 600 : $3.93153 Tape & Reel (TR)	STripFET™ III	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Obsolete	N-Channel	MOSFET (Metal Oxide)	75 V	240A (Tc)	10V	2.6mOhm @ 120A, 10V	4V @ 250µA	100 nC @ 10 V	±20V	6800 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	10-PowerSO	PowerSO-10 Exposed Bottom Pad
STV270N4F3 MOSFET N-CH 40V 270A 10POWERSO STMicroelectronics	0 In Stock	1 : $9.88000 Cut Tape (CT) 600 : $3.95578 Tape & Reel (TR)	STripFET™ III	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	40 V	270A (Tc)	10V	1.5mOhm @ 80A, 10V	4V @ 250µA	150 nC @ 10 V	±20V	7500 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	10-PowerSO	PowerSO-10 Exposed Bottom Pad
STV250N55F3 MOSFET N-CH 55V 200A 10POWERSO STMicroelectronics	0 In Stock	Obsolete	STripFET™ III	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	200A (Tc)	10V	2.2mOhm @ 75A, 10V	4V @ 250µA	100 nC @ 10 V	±20V	6800 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	10-PowerSO	PowerSO-10 Exposed Bottom Pad

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PowerSO-10 Exposed Bottom Pad Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.