IXYS Single FETs, MOSFETs

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Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-220-3
IXTP44N10T
MOSFET N-CH 100V 44A TO220AB
IXYS
940
In Stock
1 : $4.30000
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Active
N-Channel
MOSFET (Metal Oxide)
100 V
44A (Tc)
10V
30mOhm @ 22A, 10V
4.5V @ 25µA
33 nC @ 10 V
±30V
1262 pF @ 25 V
-
130W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3
TO-252AA
IXTY02N120P
MOSFET N-CH 1200V 200MA TO252
IXYS
12,055
In Stock
1 : $5.01000
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Tube
Active
N-Channel
MOSFET (Metal Oxide)
1200 V
200mA (Tc)
10V
75Ohm @ 500mA, 10V
4V @ 100µA
4.7 nC @ 10 V
±20V
104 pF @ 25 V
-
33W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
IXTY01N100
MOSFET N-CH 1000V 100MA TO252AA
IXYS
12,618
In Stock
1,470
Factory
1 : $5.61000
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-
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Active
N-Channel
MOSFET (Metal Oxide)
1000 V
100mA (Tc)
10V
80Ohm @ 100mA, 10V
4.5V @ 25µA
6.9 nC @ 10 V
±20V
54 pF @ 25 V
-
25W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-220-3
IXTP76P10T
MOSFET P-CH 100V 76A TO220AB
IXYS
5,981
In Stock
1 : $11.90000
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Tube
Active
P-Channel
MOSFET (Metal Oxide)
100 V
76A (Tc)
10V
25mOhm @ 38A, 10V
4V @ 250µA
197 nC @ 10 V
±15V
13700 pF @ 25 V
-
298W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3
TO-220-3
IXTP44P15T
MOSFET P-CH 150V 44A TO220AB
IXYS
139
In Stock
1 : $11.90000
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Tube
Active
P-Channel
MOSFET (Metal Oxide)
150 V
44A (Tc)
10V
65mOhm @ 500mA, 10V
4V @ 250µA
175 nC @ 10 V
±15V
13400 pF @ 25 V
-
298W (Tc)
-
-
-
Through Hole
TO-220-3
TO-220-3
TO-263AB
IXTA44P15T-TRL
MOSFET P-CH 150V 44A TO263
IXYS
23,540
In Stock
1 : $12.17000
Cut Tape (CT)
800 : $5.14886
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
150 V
44A (Tc)
10V
65mOhm @ 22A, 10V
4V @ 250µA
175 nC @ 10 V
±15V
13400 pF @ 25 V
-
298W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263AA
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB
IXTA44P15T
MOSFET P-CH 150V 44A TO263
IXYS
4,700
In Stock
1 : $12.17000
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Tube
Active
P-Channel
MOSFET (Metal Oxide)
150 V
44A (Tc)
10V
65mOhm @ 22A, 10V
4V @ 250µA
175 nC @ 10 V
±15V
13400 pF @ 25 V
-
298W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263AA
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB
IXTA96P085T
MOSFET P-CH 85V 96A TO263
IXYS
3,874
In Stock
1 : $12.17000
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Tube
Active
P-Channel
MOSFET (Metal Oxide)
85 V
96A (Tc)
10V
13mOhm @ 48A, 10V
4V @ 250µA
180 nC @ 10 V
±15V
13100 pF @ 25 V
-
298W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263AA
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB
IXTA96P085T-TRL
MOSFET P-CH 85V 96A TO263
IXYS
2,316
In Stock
1 : $12.17000
Cut Tape (CT)
800 : $5.14886
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
85 V
96A (Tc)
10V
13mOhm @ 48A, 10V
4V @ 250µA
180 nC @ 10 V
±15V
13100 pF @ 25 V
-
298W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263AA
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263-D2PAK
IXTA76P10T-TRL
MOSFET P-CH 100V 76A TO263
IXYS
1,708
In Stock
1 : $12.17000
Cut Tape (CT)
800 : $5.14886
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
76A (Tc)
10V
25mOhm @ 38A, 10V
4V @ 250µA
197 nC @ 10 V
±15V
13700 pF @ 25 V
-
298W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB
IXTA76P10T
MOSFET P-CH 100V 76A TO263
IXYS
1,574
In Stock
1 : $12.17000
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Tube
Active
P-Channel
MOSFET (Metal Oxide)
100 V
76A (Tc)
10V
25mOhm @ 38A, 10V
4V @ 250µA
197 nC @ 10 V
±15V
13700 pF @ 25 V
-
298W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263AA
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB
IXTA120P065T
MOSFET P-CH 65V 120A TO263
IXYS
1,308
In Stock
1 : $12.17000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
65 V
120A (Tc)
10V
10mOhm @ 500mA, 10V
4V @ 250µA
185 nC @ 10 V
±15V
13200 pF @ 25 V
-
298W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263AA
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-220-3
IXTP10P50P
MOSFET P-CH 500V 10A TO220AB
IXYS
6,408
In Stock
1 : $12.43000
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Tube
Active
P-Channel
MOSFET (Metal Oxide)
500 V
10A (Tc)
10V
1Ohm @ 5A, 10V
4V @ 250µA
50 nC @ 10 V
±20V
2840 pF @ 25 V
-
300W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3
TO-252AA
IXFY30N25X3
MOSFET N-CH 250V 30A TO252AA
IXYS
4,103
In Stock
2,100
Factory
1 : $12.43000
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Active
N-Channel
MOSFET (Metal Oxide)
250 V
30A (Tc)
10V
60mOhm @ 15A, 10V
4.5V @ 500µA
21 nC @ 10 V
±20V
1450 pF @ 25 V
-
176W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-263AB
IXTA10P50P-TRL
MOSFET P-CH 500V 10A TO263
IXYS
53,150
In Stock
1 : $12.69000
Cut Tape (CT)
800 : $5.44289
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
500 V
10A (Tc)
10V
1Ohm @ 5A, 10V
4V @ 250µA
50 nC @ 10 V
±20V
2840 pF @ 25 V
-
300W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263AA
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263-D2PAK
IXTA36P15P-TRL
MOSFET P-CH 150V 36A TO263
IXYS
7,534
In Stock
1 : $12.69000
Cut Tape (CT)
800 : $5.44289
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
150 V
36A (Tc)
10V
110mOhm @ 18A, 10V
4.5V @ 250µA
55 nC @ 10 V
±20V
3100 pF @ 25 V
-
300W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB
IXTA26P20P
MOSFET P-CH 200V 26A TO263
IXYS
3,550
In Stock
1 : $12.69000
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Active
P-Channel
MOSFET (Metal Oxide)
200 V
26A (Tc)
10V
170mOhm @ 13A, 10V
4V @ 250µA
56 nC @ 10 V
±20V
2740 pF @ 25 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263AA
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263-D2PAK
IXTA26P20P-TRL
MOSFET P-CH 200V 26A TO263
IXYS
3,199
In Stock
1 : $12.69000
Cut Tape (CT)
800 : $5.44289
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
200 V
26A (Tc)
10V
170mOhm @ 13A, 10V
4V @ 250µA
56 nC @ 10 V
±20V
2740 pF @ 25 V
-
300W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263-D2PAK
IXTA52P10P-TRL
MOSFET P-CH 100V 52A TO263
IXYS
1,279
In Stock
1 : $12.69000
Cut Tape (CT)
800 : $5.44289
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
52A (Tc)
10V
50mOhm @ 26A, 10V
4V @ 250µA
60 nC @ 10 V
±20V
2845 pF @ 25 V
-
300W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB
IXTA10P50P
MOSFET P-CH 500V 10A TO263
IXYS
1,003
In Stock
1 : $12.69000
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Active
P-Channel
MOSFET (Metal Oxide)
500 V
10A (Tc)
10V
1Ohm @ 5A, 10V
4V @ 250µA
50 nC @ 10 V
±20V
2840 pF @ 25 V
-
300W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263AA
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-220-3
IXTP26P20P
MOSFET P-CH 200V 26A TO220AB
IXYS
2,085
In Stock
300
Factory
1 : $12.95000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
200 V
26A (Tc)
10V
170mOhm @ 13A, 10V
4V @ 250µA
56 nC @ 10 V
±20V
2740 pF @ 25 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3
TO-3P
IXTQ52P10P
MOSFET P-CH 100V 52A TO3P
IXYS
2,343
In Stock
1 : $13.61000
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Tube
Active
P-Channel
MOSFET (Metal Oxide)
100 V
52A (Tc)
10V
50mOhm @ 52A, 10V
4.5V @ 250µA
60 nC @ 10 V
±20V
2845 pF @ 25 V
-
300W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-3P
TO-3P-3, SC-65-3
TO-220-3
IXTP140P05T
MOSFET P-CH 50V 140A TO220AB
IXYS
3,980
In Stock
1 : $13.96000
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Tube
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P-Channel
MOSFET (Metal Oxide)
50 V
140A (Tc)
10V
9mOhm @ 70A, 10V
4V @ 250µA
200 nC @ 10 V
±15V
13500 pF @ 25 V
-
298W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3
IXYX110N120A4
IXTH76P10T
MOSFET P-CH 100V 76A TO247
IXYS
1,563
In Stock
1 : $14.37000
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Tube
Active
P-Channel
MOSFET (Metal Oxide)
100 V
76A (Tc)
10V
25mOhm @ 38A, 10V
4V @ 250µA
197 nC @ 10 V
±15V
13700 pF @ 25 V
-
298W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247 (IXTH)
TO-247-3
TO-263AB
IXTA3N120-TRL
MOSFET N-CH 1200V 3A TO263
IXYS
3,076
In Stock
1 : $14.81000
Cut Tape (CT)
800 : $6.67869
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
1200 V
3A (Tc)
10V
4.5Ohm @ 1.5A, 10V
5V @ 250µA
42 nC @ 10 V
±20V
1350 pF @ 25 V
-
200W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263AA
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Showing
of 2,312

Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

  • Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
  • Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

  1. High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
  2. Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
  3. High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.