97A (Tc) Single FETs, MOSFETs

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of 29

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
C3M0025065K GEN 3 650V 25 M SIC MOSFET Wolfspeed, Inc.	896 In Stock	1 : $32.73000 Tube	C3M™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	97A (Tc)	15V	34mOhm @ 33.5A, 15V	3.6V @ 9.22mA	112 nC @ 15 V	+19V, -8V	2980 pF @ 600 V	-	326W (Tc)	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4L	TO-247-4
SQD97N06-6M3L_GE3 MOSFET N-CH 60V 97A TO252AA Vishay Siliconix	1,082 In Stock	1 : $3.20000 Cut Tape (CT) 2,000 : $1.12193 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	97A (Tc)	4.5V, 10V	6.3mOhm @ 25A, 10V	2.5V @ 250µA	125 nC @ 10 V	±20V	6060 pF @ 25 V	-	136W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFS4410ZTRLPBF MOSFET N-CH 100V 97A D2PAK Infineon Technologies	636 In Stock	1 : $4.27000 Cut Tape (CT) 800 : $1.39839 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	97A (Tc)	10V	9mOhm @ 58A, 10V	4V @ 150µA	120 nC @ 10 V	±20V	4820 pF @ 50 V	-	230W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SQR97N06-6M3L_GE3 MOSFET N-CH 60V 50A TO252 Vishay Siliconix	1,992 In Stock	1 : $2.56000 Cut Tape (CT) 2,000 : $1.07118 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	60 V	97A (Tc)	4.5V, 10V	6.3mOhm @ 25A, 10V	2.5V @ 250µA	125 nC @ 10 V	±20V	6060 pF @ 25 V	-	136W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPDQ60R024CM8XTMA1 IPDQ60R024CM8XTMA1 Infineon Technologies	720 In Stock	1 : $15.42000 Cut Tape (CT) 750 : $7.05659 Tape & Reel (TR)	CoolMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	97A (Tc)	10V	24mOhm @ 41.7A, 10V	4.7V @ 1.06mA	122 nC @ 10 V	±20V	5382 pF @ 400 V	-	480W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HDSOP-22-1	22-PowerBSOP Module
IMDQ65R020M2HXUMA1 IMDQ65R020M2HXUMA1 Infineon Technologies	610 In Stock	1 : $18.67000 Cut Tape (CT) 750 : $11.53767 Tape & Reel (TR)	CoolSiC™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	97A (Tc)	15V, 20V	18mOhm @ 46.9A, 20V	5.6V @ 9.5mA	57 nC @ 18 V	+23V, -7V	2038 pF @ 400 V	-	394W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-HDSOP-22-1	22-PowerBSOP Module
IRF100B202 MOSFET N-CH 100V 97A TO220AB Infineon Technologies	1,741 In Stock	1 : $3.03000 Tube	HEXFET®, StrongIRFET™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	97A (Tc)	10V	8.6mOhm @ 58A, 10V	4V @ 150µA	116 nC @ 10 V	±20V	4476 pF @ 50 V	-	221W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
PSMN8R5-100ESFQ MOSFET N-CHANNEL 100V 97A I2PAK Nexperia USA Inc.	0 In Stock 10,000 Marketplace	1,000 : $1.25557 Tube 153 : $2.95961 Bulk	-	Bulk Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	97A (Tc)	7V, 10V	8.8mOhm @ 25A, 10V	4V @ 1mA	44.5 nC @ 10 V	±20V	3181 pF @ 50 V	-	183W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	I2PAK	TO-262-3 Long Leads, I2PAK, TO-262AA
UMWIRFS4410Z MOSFET N-CH 100V 97A D2PAK UMW	760 In Stock	1 : $4.37000 Cut Tape (CT)	*	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	97A (Tc)	10V	9mOhm @ 58A, 10V	4V @ 150µA	-	±20V	-	-	230W (Tc)	-55°C ~ 155°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IMZC120R017M2HXKSA1 SICFET N-CH 1200V 97A TO247 Infineon Technologies	47 In Stock	1 : $28.09000 Tube	CoolSiC™ G2	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	97A (Tc)	15V, 18V	17mOhm @ 40A, 18V	5.1V @ 12.7mA	89 nC @ 18 V	+23V, -7V	2910 pF @ 800 V	-	382W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4-17	TO-247-4
C3M0025065D GEN 3 650V 25 M SIC MOSFET Wolfspeed, Inc.	88 In Stock	1 : $32.92000 Tube	C3M™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	97A (Tc)	15V	34mOhm @ 33.5A, 15V	3.6V @ 9.22mA	108 nC @ 15 V	+19V, -8V	2980 pF @ 600 V	-	326W (Tc)	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
APT20M22JVR MOSFET N-CH 200V 97A ISOTOP Microchip Technology	20 In Stock	1 : $51.20000 Tube	POWER MOS V®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	97A (Tc)	-	22mOhm @ 500mA, 10V	4V @ 2.5mA	435 nC @ 10 V	-	10200 pF @ 25 V	-	-	-	-	-	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
IMZA120R017M2HXKSA1 SICFET N-CH 1200V 97A TO247 Infineon Technologies	0 In Stock Check Lead Time	1 : $28.09000 Tube	CoolSiC™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	97A (Tc)	15V, 18V	23mOhm @ 40A, 18V	5.1V @ 12.7mA	89 nC @ 18 V	+23V, -7V	2910 pF @ 800 V	-	382W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4-8	TO-247-4
DMWSH120H23SM4Q SIC MOSFET BVDSS: >1000V TO247-4 Diodes Incorporated	0 In Stock Check Lead Time	1 : $49.81000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	97A (Tc)	15V, 18V	23mOhm @ 50A, 18V	3.6V @ 17.7mA	215.6 nC @ 18 V	+22V, -10V	3742 pF @ 1000 V	-	326W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4	TO-247-4
IRFS3507TRLPBF MOSFET N-CH 75V 97A D2PAK Infineon Technologies	0 In Stock	800 : $1.93251 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	75 V	97A (Tc)	10V	8.8mOhm @ 58A, 10V	4V @ 100µA	130 nC @ 10 V	±20V	3540 pF @ 50 V	-	190W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IRFB3507PBF MOSFET N-CH 75V 97A TO220AB Infineon Technologies	0 In Stock	3,000 : $2.10041 Tube	HEXFET®	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	75 V	97A (Tc)	10V	8.8mOhm @ 58A, 10V	4V @ 100µA	130 nC @ 10 V	±20V	3540 pF @ 50 V	-	190W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRFSL4410ZPBF MOSFET N-CH 100V 97A TO262 Infineon Technologies	0 In Stock	1,000 : $2.28595 Tube	HEXFET®	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	97A (Tc)	10V	9mOhm @ 58A, 10V	4V @ 150µA	120 nC @ 10 V	±20V	4820 pF @ 50 V	-	230W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262	TO-262-3 Long Leads, I2PAK, TO-262AA
IRFB4410ZPBF MOSFET N-CH 100V 97A TO220AB Infineon Technologies	0 In Stock Check Lead Time	1,000 : $3.12415 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	97A (Tc)	10V	9mOhm @ 58A, 10V	4V @ 150µA	120 nC @ 10 V	±20V	4820 pF @ 50 V	-	230W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRFS3507 MOSFET N-CH 75V 97A D2PAK Infineon Technologies	0 In Stock	200 : $3.40375 Tube	HEXFET®	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	75 V	97A (Tc)	10V	8.8mOhm @ 58A, 10V	4V @ 100µA	130 nC @ 10 V	±20V	3540 pF @ 50 V	-	190W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IRFB3507 MOSFET N-CH 75V 97A TO220AB Infineon Technologies	0 In Stock	50 : $3.79060 Tube	HEXFET®	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	75 V	97A (Tc)	10V	8.8mOhm @ 58A, 10V	4V @ 100µA	130 nC @ 10 V	±20V	3540 pF @ 50 V	-	190W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
APT20M22JVRU2 MOSFET N-CH 200V 97A SOT227 Microchip Technology	0 In Stock Check Lead Time	32 : $43.44125 Bulk	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	200 V	97A (Tc)	10V	22mOhm @ 48.5A, 10V	4V @ 2.5mA	290 nC @ 10 V	±30V	8500 pF @ 25 V	-	450W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227	SOT-227-4, miniBLOC
APT20M22JVRU3 MOSFET N-CH 200V 97A SOT227 Microchip Technology	0 In Stock Check Lead Time	32 : $43.44125 Bulk	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	200 V	97A (Tc)	10V	22mOhm @ 48.5A, 10V	4V @ 2.5mA	290 nC @ 10 V	±30V	8500 pF @ 25 V	-	450W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227	SOT-227-4, miniBLOC
IRFP4410ZPBF MOSFET N-CH 100V 97A TO247AC Infineon Technologies	0 In Stock	Obsolete	HEXFET®	Bag	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	97A (Tc)	10V	9mOhm @ 58A, 10V	4V @ 150µA	120 nC @ 10 V	±20V	4820 pF @ 50 V	-	230W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
IRFS4410ZPBF MOSFET N-CH 100V 97A D2PAK Infineon Technologies	0 In Stock	Discontinued at Digi-Key	HEXFET®	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	100 V	97A (Tc)	10V	9mOhm @ 58A, 10V	4V @ 150µA	120 nC @ 10 V	±20V	4820 pF @ 50 V	-	230W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IRFB4410ZGPBF MOSFET N-CH 100V 97A TO220AB Infineon Technologies	0 In Stock	Obsolete	HEXFET®	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	97A (Tc)	10V	9mOhm @ 58A, 10V	4V @ 150µA	120 nC @ 10 V	±20V	4820 pF @ 50 V	-	230W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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