7.6A (Tc) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
IPD50R500CEAUMA1 MOSFET N-CH 500V 7.6A TO252 Infineon Technologies	10,072 In Stock	1 : $2.06000 Cut Tape (CT) 2,500 : $0.52444 Tape & Reel (TR)	CoolMOS™ CE	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	500 V	7.6A (Tc)	13V	500mOhm @ 2.3A, 13V	3.5V @ 200µA	18.7 nC @ 10 V	±20V	433 pF @ 100 V	-	57W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
C3M0350120D SICFET N-CH 1200V 7.6A TO247-3 Wolfspeed, Inc.	880 In Stock	1 : $11.75000 Tube	C3M™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	7.6A (Tc)	15V	455mOhm @ 3.6A, 15V	3.6V @ 1mA	19 nC @ 15 V	+15V, -4V	345 pF @ 1000 V	-	50W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
UF3C120400B7S SICFET N-CH 1200V 7.6A D2PAK-7 onsemi	961 In Stock 38,400 Factory	1 : $13.67000 Cut Tape (CT) 800 : $6.00704 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Cascode SiCJFET)	1200 V	7.6A (Tc)	12V	515mOhm @ 5A, 12V	6V @ 10mA	22.5 nC @ 15 V	±25V	739 pF @ 800 V	-	100W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
UF3C170400K3S SICFET N-CH 1700V 7.6A TO247-3 onsemi	69,003 In Stock 25,800 Factory	1 : $14.45000 Tube	-	Tube	Active	N-Channel	SiCFET (Cascode SiCJFET)	1700 V	7.6A (Tc)	12V	515mOhm @ 5A, 12V	6V @ 10mA	27.5 nC @ 15 V	±25V	740 pF @ 100 V	-	100W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
UF3C170400B7S SICFET N-CH 1700V 7.6A D2PAK-7 onsemi	3,497 In Stock 4,800 Factory	1 : $16.80000 Cut Tape (CT) 800 : $7.88424 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Cascode SiCJFET)	1700 V	7.6A (Tc)	12V	515mOhm @ 5A, 12V	6V @ 10mA	23.1 nC @ 15 V	±25V	734 pF @ 1200 V	-	100W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
UF3C120400K3S SICFET N-CH 1200V 7.6A TO247-3 onsemi	120 In Stock 7,200 Factory	1 : $16.33000 Tube	-	Tube	Active	N-Channel	SiCFET (Cascode SiCJFET)	1200 V	7.6A (Tc)	12V	515mOhm @ 5A, 12V	6V @ 10mA	27 nC @ 15 V	±25V	740 pF @ 100 V	-	100W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
SPD08N50C3ATMA1 MOSFET N-CH 500V 7.6A TO252-3 Infineon Technologies	11,844 In Stock	1 : $3.95000 Cut Tape (CT) 2,500 : $1.12632 Tape & Reel (TR)	CoolMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	500 V	7.6A (Tc)	10V	600mOhm @ 4.6A, 10V	3.9V @ 350µA	32 nC @ 10 V	±20V	750 pF @ 25 V	-	83W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
SFR2955TM P-CHANNEL POWER MOSFET Fairchild Semiconductor	4,361 Marketplace	1,010 : $0.45600 Bulk	-	Bulk	Obsolete	P-Channel	MOSFET (Metal Oxide)	60 V	7.6A (Tc)	10V	300mOhm @ 3.8A, 10V	4V @ 250µA	19 nC @ 10 V	±20V	600 pF @ 25 V	-	2.5W (Ta), 32W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
SFR2955TF P-CHANNEL POWER MOSFET Fairchild Semiconductor	2,000 Marketplace	757 : $0.60801 Bulk	-	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	60 V	7.6A (Tc)	10V	300mOhm @ 3.8A, 10V	4V @ 250µA	19 nC @ 10 V	±20V	600 pF @ 25 V	-	2.5W (Ta), 32W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
NTB65N02RT4G MOSFET N-CH 25V 7.6A D2PAK onsemi	0 In Stock 4,000 Marketplace	466 : $0.97279 Bulk	-	Tape & Reel (TR) Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	25 V	7.6A (Tc)	4.5V, 10V	8.2mOhm @ 30A, 10V	2V @ 250µA	9.5 nC @ 4.5 V	±20V	1330 pF @ 20 V	-	1.04W (Ta), 62.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
FQU10N20TU MOSFET N-CH 200V 7.6A IPAK Fairchild Semiconductor	21,774 Marketplace	413 : $1.10959 Tube	QFET®	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	7.6A (Tc)	10V	360mOhm @ 3.8A, 10V	5V @ 250µA	18 nC @ 10 V	±30V	670 pF @ 25 V	-	2.5W (Ta), 51W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	IPAK	TO-251-3 Short Leads, IPAK, TO-251AA
IPN50R800CEATMA1 MOSFET N-CH 500V 7.6A SOT223 Infineon Technologies	1,900 In Stock	1 : $1.52000 Cut Tape (CT)	CoolMOS™ CE	Tape & Reel (TR) Cut Tape (CT)	Obsolete	N-Channel	MOSFET (Metal Oxide)	500 V	7.6A (Tc)	13V	800mOhm @ 1.5A, 13V	3.5V @ 130µA	12.4 nC @ 10 V	±20V	280 pF @ 100 V	-	5W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	PG-SOT223	TO-261-4, TO-261AA
SPP08N50C3XKSA1 SPP08N50 - 800V COOLMOS N-CHANNE Infineon Technologies	21,945 Marketplace	222 : $2.05198 Bulk	CoolMOS™	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	560 V	7.6A (Tc)	10V	600mOhm @ 4.6A, 10V	3.9V @ 350µA	32 nC @ 10 V	±20V	750 pF @ 25 V	-	83W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3-1	TO-220-3
SI2369DS-T1-GE3 MOSFET P-CH 30V 7.6A TO236 Vishay Siliconix	845 In Stock	1 : $1.04000 Cut Tape (CT) 3,000 : $0.24181 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	7.6A (Tc)	4.5V, 10V	29mOhm @ 5.4A, 10V	2.5V @ 250µA	36 nC @ 10 V	±20V	1295 pF @ 15 V	-	1.25W (Ta), 2.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
FQU10N20LTU MOSFET N-CH 200V 7.6A IPAK onsemi	0 In Stock	5,040 : $0.43978 Tube	QFET®	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	7.6A (Tc)	5V, 10V	360mOhm @ 3.8A, 10V	2V @ 250µA	17 nC @ 5 V	±20V	830 pF @ 25 V	-	2.5W (Ta), 51W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	IPAK	TO-251-3 Short Leads, IPAK, TO-251AA
FQD10N20TM MOSFET N-CH 200V 7.6A DPAK onsemi	0 In Stock	2,500 : $0.58116 Tape & Reel (TR)	QFET®	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	7.6A (Tc)	10V	360mOhm @ 3.8A, 10V	5V @ 250µA	18 nC @ 10 V	±30V	670 pF @ 25 V	-	2.5W (Ta), 51W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
FQD10N20TF MOSFET N-CH 200V 7.6A DPAK onsemi	0 In Stock	2,000 : $0.59670 Tape & Reel (TR)	QFET®	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	7.6A (Tc)	10V	360mOhm @ 3.8A, 10V	5V @ 250µA	18 nC @ 10 V	±30V	670 pF @ 25 V	-	2.5W (Ta), 51W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
DMJ70H600HK3-13 MOSFET BVDSS: 651V~800V TO252 T& Diodes Incorporated	0 In Stock	2,500 : $1.14074 Tape & Reel (TR)	-	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	700 V	7.6A (Tc)	10V	600mOhm @ 2.4A, 10V	5V @ 250µA	17.4 nC @ 10 V	±30V	570 pF @ 25 V	-	90W (Tc)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
SPD08N50C3BTMA1 MOSFET N-CH 560V 7.6A TO252-3 Infineon Technologies	0 In Stock	2,500 : $1.17898 Tape & Reel (TR)	CoolMOS™	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	560 V	7.6A (Tc)	10V	600mOhm @ 4.6A, 10V	3.9V @ 350µA	32 nC @ 10 V	±20V	750 pF @ 25 V	-	83W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO252-3-11	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPD50R800CEAUMA1 CONSUMER Infineon Technologies	0 In Stock	1 : $1.77000 Cut Tape (CT) 2,500 : $0.45376 Tape & Reel (TR)	CoolMOS™ CE	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Obsolete	N-Channel	MOSFET (Metal Oxide)	500 V	7.6A (Tc)	13V	800mOhm @ 1.5A, 13V	3.5V @ 130µA	12.4 nC @ 10 V	±20V	280 pF @ 100 V	-	60W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO252-2	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFI520N MOSFET N-CH 100V 7.6A TO220AB FP Infineon Technologies	0 In Stock	50 : $2.71100 Tube	HEXFET®	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	7.6A (Tc)	10V	200mOhm @ 4.3A, 10V	4V @ 250µA	25 nC @ 10 V	±20V	330 pF @ 25 V	-	30W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
SPP08N50C3XKSA1 MOSFET N-CH 560V 7.6A TO220-3 Infineon Technologies	0 In Stock	Obsolete	CoolMOS™	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	560 V	7.6A (Tc)	10V	600mOhm @ 4.6A, 10V	3.9V @ 350µA	32 nC @ 10 V	±20V	750 pF @ 25 V	-	83W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3-1	TO-220-3
SPA08N50C3XKSA1 MOSFET N-CH 560V 7.6A TO220-FP Infineon Technologies	0 In Stock	Obsolete	CoolMOS™	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	560 V	7.6A (Tc)	10V	600mOhm @ 4.6A, 10V	3.9V @ 350µA	32 nC @ 10 V	±20V	750 pF @ 25 V	-	32W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3-31	TO-220-3 Full Pack
FQD10N20LTM MOSFET N-CH 200V 7.6A TO252 onsemi	0 In Stock	Obsolete	QFET®	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	7.6A (Tc)	5V, 10V	360mOhm @ 3.8A, 10V	2V @ 250µA	17 nC @ 5 V	±20V	830 pF @ 25 V	-	2.5W (Ta), 51W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
FQD10N20LTF MOSFET N-CH 200V 7.6A TO252 onsemi	0 In Stock	Obsolete	QFET®	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	7.6A (Tc)	5V, 10V	360mOhm @ 3.8A, 10V	2V @ 250µA	17 nC @ 5 V	±20V	830 pF @ 25 V	-	2.5W (Ta), 51W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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