68A (Tc) Single FETs, MOSFETs

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Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-247-4
NTH4L022N120M3S
SIC MOS TO247-4L 22MOHM 1200V
onsemi
587
In Stock
27,900
Factory
1 : $26.73000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
68A (Tc)
18V
30mOhm @ 40A, 18V
4.4V @ 20mA
151 nC @ 18 V
+22V, -10V
3175 pF @ 800 V
-
352W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
TO263-7
C3M0032120J1
1200V 32MOHM SIC MOSFET
Wolfspeed, Inc.
346
In Stock
1 : $34.88000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
68A (Tc)
15V
43mOhm @ 41.4A, 15V
3.6V @ 11.5mA
111 nC @ 15 V
+15V, -4V
3424 pF @ 1000 V
-
277W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-4
MSC035SMA170B4
MOSFET SIC 1700V 35 MOHM TO-247-
Microchip Technology
338
In Stock
1 : $65.64000
Bulk
-
Bulk
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
68A (Tc)
20V
45mOhm @ 30A, 20V
3.25V @ 2.5mA (Typ)
178 nC @ 20 V
+23V, -10V
3300 pF @ 1000 V
-
370W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
TO-247-3 HiP
STW70N60M2
MOSFET N-CH 600V 68A TO247
STMicroelectronics
488
In Stock
1 : $10.13000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
68A (Tc)
10V
40mOhm @ 34A, 10V
4V @ 250µA
118 nC @ 10 V
±25V
5200 pF @ 100 V
-
450W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247
TO-247-3
1,990
In Stock
1 : $14.53000
Cut Tape (CT)
2,000 : $6.52148
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
68A (Tc)
15V, 20V
30mOhm @ 27.9A, 20V
5.6V @ 5.7mA
34 nC @ 18 V
+23V, -7V
1214 pF @ 400 V
-
315W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-LHSOF-4-1
4-PowerLSFN
1,643
In Stock
1 : $15.06000
Cut Tape (CT)
2,000 : $6.84204
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
68A (Tc)
15V, 20V
30mOhm @ 27.9A, 20V
5.6V @ 5.7mA
34 nC @ 18 V
+23V, -7V
1215 pF @ 400 V
-
312W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-HSOF-8-2
8-PowerSFN
219
In Stock
1 : $18.56000
Cut Tape (CT)
1,000 : $11.36330
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
68A (Tc)
15V, 20V
24mOhm @ 34.5A, 20V
5.6V @ 7mA
42 nC @ 18 V
+23V, -7V
1499 pF @ 400 V
-
263W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-4
NVH4L022N120M3S
SIC MOS TO247-4L 22MOHM 1200V
onsemi
653
In Stock
264,600
Factory
1 : $49.18000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
68A (Tc)
18V
30mOhm @ 40A, 18V
4.4V @ 20mA
151 nC @ 18 V
+22V, -10V
3175 pF @ 800 V
-
352W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-4L
TO-247-4
PSMNR82-30YLEX
BUK7Y7R0-40HX
MOSFET N-CH 40V 68A LFPAK56
Nexperia USA Inc.
281
In Stock
1 : $3.13000
Cut Tape (CT)
1,500 : $0.90213
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
68A (Tc)
10V
7mOhm @ 15A, 10V
3.6V @ 1mA
26 nC @ 10 V
±20V
1630 pF @ 25 V
-
64W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
TO-247-3
NTHL022N120M3S
SILICON CARBIDE (SIC) MOSFET ELI
onsemi
105
In Stock
18,000
Factory
1 : $30.29000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
68A (Tc)
18V
30mOhm @ 40A, 18V
4.4V @ 20mA
139 nC @ 18 V
+22V, -10V
3130 pF @ 800 V
-
352W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
BA17818FP-E2
AG502EGD3HRBTL
PCH -40V -68A, TO-252 (DPAK), PO
Rohm Semiconductor
2,476
In Stock
1 : $3.45000
Cut Tape (CT)
2,500 : $0.99462
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
68A (Tc)
4.5V, 10V
13.1mOhm @ 68A, 10V
2.5V @ 1mA
48 nC @ 10 V
+5V, -20V
2420 pF @ 20 V
-
77W (Tc)
175°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
1,611
In Stock
1 : $14.95000
Cut Tape (CT)
1,800 : $6.77766
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
68A (Tc)
15V, 20V
30mOhm @ 27.9A, 20V
5.6V @ 5.7mA
34 nC @ 18 V
+23V, -7V
1213 pF @ 400 V
-
312W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-HDSOP-16-6
16-PowerSOP Module
990
In Stock
1 : $18.34000
Cut Tape (CT)
1,000 : $8.85646
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
68A (Tc)
15V, 20V
24mOhm @ 34.5A, 20V
5.6V @ 7mA
42 nC @ 18 V
+23V, -7V
1499 pF @ 400 V
-
263W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
224
In Stock
1 : $19.94000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
68A (Tc)
15V
43mOhm @ 20A, 15V
2.8V @ 17.5mA
104 nC @ 15 V
+15V, -5V
2908 pF @ 800 V
-
300W (Ta)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
206
In Stock
1 : $19.94000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
68A (Tc)
15V
43mOhm @ 20A, 15V
2.8V @ 17.5mA
104 nC @ 15 V
+15V, -5V
2908 pF @ 800 V
-
300W (Ta)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247
TO-247-3
209
In Stock
1 : $20.73000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
68A (Tc)
15V
43mOhm @ 20A, 15V
2.8V @ 17.5mA
104 nC @ 15 V
+15V, -5V
2908 pF @ 800 V
-
300W (Ta)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247
TO-247-3
135
In Stock
1 : $20.73000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
68A (Tc)
15V
43mOhm @ 20A, 15V
2.8V @ 17.5mA
104 nC @ 15 V
+18V, -8V
2908 pF @ 800 V
-
300W (Tj)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-4L
TO-247-4
TO-263-8
G3F34MT12J-TR
1200V 34M TO-263-7 G3F SIC MOSFE
GeneSiC Semiconductor
800
In Stock
1 : $25.49000
Cut Tape (CT)
800 : $16.09660
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
68A (Tc)
18V
45mOhm @ 26A, 18V
4.3V @ 18mA
104 nC @ 18 V
+22V, -10V
2418 pF @ 800 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO263-7
C3M0032120J1-TR
SIC, MOSFET, 32M, 1200V, TO-263-
Wolfspeed, Inc.
1,568
In Stock
1 : $34.88000
Cut Tape (CT)
800 : $19.06073
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
68A (Tc)
15V
43mOhm @ 41.4A, 15V
3.6V @ 11.5mA
111 nC @ 15 V
+15V, -4V
3424 pF @ 1000 V
-
277W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
5,455
In Stock
1 : $2.76000
Cut Tape (CT)
3,000 : $0.92032
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
68A (Tc)
4.5V, 10V
6mOhm @ 20A, 10V
3V @ 250µA
37 nC @ 10 V
±20V
2057 pF @ 30 V
-
50W (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
DFN5060-8
8-PowerVDFN
BUK7626-100B,118
PSMN013-100BS,118
MOSFET N-CH 100V 68A D2PAK
Nexperia USA Inc.
324
In Stock
1 : $5.00000
Cut Tape (CT)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
N-Channel
MOSFET (Metal Oxide)
100 V
68A (Tc)
10V
13.9mOhm @ 15A, 10V
4V @ 1mA
59 nC @ 10 V
±20V
3195 pF @ 50 V
-
170W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO263-7
C3M0032120J2-TR
MOSFET N-CH 1200V 68A TO263
Wolfspeed, Inc.
331
In Stock
1 : $34.88000
Cut Tape (CT)
800 : $19.06073
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
68A (Tc)
15V
-
3.6V @ 11.5mA
111 nC @ 15 V
-8V, +19V
3424 pF @ 1000 V
-
277W (Tc)
-40°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-268
IXTT68P20T
MOSFET P-CH 200V 68A TO268
IXYS
51
In Stock
1 : $32.55000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
200 V
68A (Tc)
10V
55mOhm @ 34A, 10V
4V @ 250µA
380 nC @ 10 V
±15V
33400 pF @ 25 V
-
568W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-268AA
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-247-3
MSC035SMA170B
MOSFET SIC 1700 V 45 MOHM TO-247
Microchip Technology
58
In Stock
1 : $63.71000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
68A (Tc)
20V
45mOhm @ 30A, 20V
3.25V @ 2.5mA (Typ)
178 nC @ 20 V
+23V, -10V
3300 pF @ 1000 V
-
370W (Tc)
-60°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
IV3Q12035D7Z
IV3Q12035D7Z
GEN3, SIC MOSFET, 1200V 35MOHM,
Inventchip
60
In Stock
1 : $15.74000
Strip
-
Strip
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
68A (Tc)
18V
46mOhm @ 30A, 18V
4V @ 8mA
83 nC @ 18 V
+20V, -5V
2082 pF @ 800 V
-
326W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-263-7
TO-263-7
Showing
of 50

Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

  • Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
  • Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

  1. High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
  2. Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
  3. High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.