31A (Tc) Single FETs, MOSFETs

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of 126

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
IRFU5305PBF MOSFET P-CH 55V 31A IPAK Infineon Technologies	5,201 In Stock	1 : $2.02000 Tube	HEXFET®	Tube	Active	P-Channel	MOSFET (Metal Oxide)	55 V	31A (Tc)	10V	65mOhm @ 16A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	1200 pF @ 25 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	IPAK (TO-251AA)	TO-251-3 Short Leads, IPAK, TO-251AA
IRFR5305TRPBF MOSFET P-CH 55V 31A DPAK Infineon Technologies	35,674 In Stock	1 : $2.45000 Cut Tape (CT) 2,000 : $0.67700 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	55 V	31A (Tc)	10V	65mOhm @ 16A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	1200 pF @ 25 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252AA (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRF5305PBF MOSFET P-CH 55V 31A TO220AB Infineon Technologies	23,011 In Stock	1 : $3.08000 Tube	HEXFET®	Tube	Active	P-Channel	MOSFET (Metal Oxide)	55 V	31A (Tc)	10V	60mOhm @ 16A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	1200 pF @ 25 V	-	110W (Tc)	-55°C ~ 155°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRF5305STRLPBF MOSFET P-CH 55V 31A D2PAK Infineon Technologies	2,213 In Stock	1 : $3.49000 Cut Tape (CT) 800 : $1.14391 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	55 V	31A (Tc)	10V	60mOhm @ 16A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	1200 pF @ 25 V	-	3.8W (Ta), 110W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
BUK9637-100E,118 MOSFET N-CH 100V 31A D2PAK Nexperia USA Inc.	1,302 In Stock	1 : $4.06000 Cut Tape (CT) 800 : $1.32829 Tape & Reel (TR)	TrenchMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	31A (Tc)	5V, 10V	36mOhm @ 10A, 10V	2.1V @ 1mA	22.8 nC @ 5 V	±10V	2681 pF @ 25 V	-	96W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPW60R070CFD7XKSA1 MOSFET N-CH 650V 31A TO247-3 Infineon Technologies	415 In Stock	1 : $10.02000 Tube	CoolMOS™ CFD7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	31A (Tc)	10V	70mOhm @ 15.1A, 10V	4.5V @ 760µA	67 nC @ 10 V	±20V	2721 pF @ 400 V	-	156W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3-21	TO-247-3
UJ3C065080K3S MOSFET N-CH 650V 31A TO247-3 onsemi	226 In Stock 42,300 Factory	1 : $17.86000 Tube	-	Tube	Active	N-Channel	SiCFET (Cascode SiCJFET)	650 V	31A (Tc)	12V	111mOhm @ 20A, 12V	6V @ 10mA	51 nC @ 15 V	±25V	1500 pF @ 100 V	-	190W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
IRFR3410TRPBF MOSFET N-CH 100V 31A DPAK Infineon Technologies	5,105 In Stock	1 : $2.36000 Cut Tape (CT) 2,000 : $0.63007 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	31A (Tc)	10V	39mOhm @ 18A, 10V	4V @ 250µA	56 nC @ 10 V	±20V	1690 pF @ 25 V	-	3W (Ta), 110W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252AA (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFR3410TRLPBF MOSFET N-CH 100V 31A DPAK Infineon Technologies	3,783 In Stock	1 : $2.51000 Cut Tape (CT) 3,000 : $0.65101 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	31A (Tc)	10V	39mOhm @ 18A, 10V	4V @ 250µA	56 nC @ 10 V	±20V	1690 pF @ 25 V	-	3W (Ta), 110W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252AA (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFR5305TRLPBF MOSFET P-CH 55V 31A DPAK Infineon Technologies	11,457 In Stock	1 : $2.92000 Cut Tape (CT) 3,000 : $0.80232 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	55 V	31A (Tc)	10V	65mOhm @ 16A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	1200 pF @ 25 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252AA (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFIZ44NPBF MOSFET N-CH 55V 31A TO220AB FP Infineon Technologies	906 In Stock	1 : $3.45000 Tube	HEXFET®	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	55 V	31A (Tc)	10V	24mOhm @ 17A, 10V	4V @ 250µA	65 nC @ 10 V	±20V	1300 pF @ 25 V	-	45W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB Full-Pak	TO-220-3 Full Pack
IPP60R099P7XKSA1 MOSFET N-CH 600V 31A TO220-3 Infineon Technologies	368 In Stock	1 : $6.61000 Tube	CoolMOS™ P7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	31A (Tc)	10V	99mOhm @ 10.5A, 10V	4V @ 530µA	45 nC @ 10 V	±20V	1952 pF @ 400 V	-	117W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3	TO-220-3
IPB60R099P7ATMA1 MOSFET N-CH 600V 31A D2PAK Infineon Technologies	1,065 In Stock	1 : $6.81000 Cut Tape (CT) 1,000 : $2.36606 Tape & Reel (TR)	CoolMOS™ P7	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	31A (Tc)	10V	99mOhm @ 10.5A, 10V	4V @ 530µA	45 nC @ 10 V	±20V	1952 pF @ 400 V	-	117W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
FQB34N20LTM MOSFET N-CH 200V 31A D2PAK onsemi	4,422 In Stock	1 : $7.19000 Cut Tape (CT) 800 : $2.64371 Tape & Reel (TR)	QFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	200 V	31A (Tc)	5V, 10V	75mOhm @ 15.5A, 10V	2V @ 250µA	72 nC @ 5 V	±20V	3900 pF @ 25 V	-	3.13W (Ta), 180W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPW60R099P7XKSA1 MOSFET N-CH 600V 31A TO247-3 Infineon Technologies	238 In Stock	1 : $7.62000 Tube	CoolMOS™ P7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	31A (Tc)	10V	99mOhm @ 10.5A, 10V	4V @ 530µA	45 nC @ 10 V	±20V	1952 pF @ 400 V	-	117W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3	TO-247-3
IPP60R070CFD7XKSA1 MOSFET N-CH 650V 31A TO220-3 Infineon Technologies	696 In Stock	1 : $9.20000 Tube	CoolMOS™ CFD7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	31A (Tc)	10V	70mOhm @ 15.1A, 10V	4.5V @ 760µA	67 nC @ 10 V	±20V	2721 pF @ 400 V	-	156W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3	TO-220-3
IGLT65R055D2ATMA1 IGLT65R055D2ATMA1 Infineon Technologies	1,051 In Stock	1 : $10.58000 Cut Tape (CT) 1,800 : $4.27172 Tape & Reel (TR)	CoolGaN™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	31A (Tc)	-	-	1.6V @ 2.6mA	4.7 nC @ 3 V	-10V	340 pF @ 400 V	-	102W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HDSOP-16-8	16-PowerSOP Module
IGT65R055D2ATMA1 IGT65R055D2ATMA1 Infineon Technologies	450 In Stock	1 : $10.58000 Cut Tape (CT) 2,000 : $4.27172 Tape & Reel (TR)	CoolGaN™ G5	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	31A (Tc)	-	-	1.6V @ 2.6mA	4.7 nC @ 3 V	-10V	340 pF @ 400 V	-	106W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HSOF-8-3	8-PowerSFN
IPB60R099CPATMA1 MOSFET N-CH 600V 31A TO263-3 Infineon Technologies	4,355 In Stock	1 : $11.62000 Cut Tape (CT) 1,000 : $4.84713 Tape & Reel (TR)	CoolMOS™ CP	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600 V	31A (Tc)	10V	99mOhm @ 18A, 10V	3.5V @ 1.2mA	80 nC @ 10 V	±20V	2800 pF @ 100 V	-	255W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO263-3-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPW60R099CPFKSA1 MOSFET N-CH 650V 31A TO247-3 Infineon Technologies	520 In Stock	1 : $12.39000 Tube	CoolMOS™	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	650 V	31A (Tc)	10V	99mOhm @ 18A, 10V	3.5V @ 1.2mA	80 nC @ 10 V	±20V	2800 pF @ 100 V	-	255W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3-1	TO-247-3
IPW60R099CPAFKSA1 MOSFET N-CH 600V 31A TO247-3 Infineon Technologies	240 In Stock	1 : $13.25000 Tube	CoolMOS™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	31A (Tc)	10V	105mOhm @ 18A, 10V	3.5V @ 1.2mA	80 nC @ 10 V	±20V	2800 pF @ 100 V	-	255W (Tc)	-40°C ~ 150°C (TJ)	Automotive	AEC-Q101	Through Hole	PG-TO247-3	TO-247-3
AIMZHN120R080M1TXKSA1 SIC_DISCRETE Infineon Technologies	240 In Stock	1 : $16.12000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	31A (Tc)	18V, 20V	100mOhm @ 10A, 20V	5.1V @ 3.3mA	24 nC @ 20 V	+23V, -5V	671 pF @ 800 V	-	169W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	PG-TO247-4-14	TO-247-4
UF3C065080T3S MOSFET N-CH 650V 31A TO220-3 onsemi	5,311 In Stock 5,000 Factory	1 : $17.20000 Tube	-	Tube	Active	N-Channel	SiCFET (Cascode SiCJFET)	650 V	31A (Tc)	12V	100mOhm @ 20A, 12V	6V @ 10mA	51 nC @ 15 V	±25V	1500 pF @ 100 V	-	190W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
IPA60R099P7XKSA1 MOSFET N-CH 600V 31A TO220 Infineon Technologies	910 In Stock	1 : $6.62000 Tube	CoolMOS™ P7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	31A (Tc)	10V	99mOhm @ 10.5A, 10V	4V @ 530µA	45 nC @ 10 V	±20V	1952 pF @ 400 V	-	29W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IPP60R099CPXKSA1 MOSFET N-CH 650V 31A TO220-3 Infineon Technologies	2,703 In Stock	1 : $11.27000 Tube	CoolMOS™	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	650 V	31A (Tc)	10V	99mOhm @ 18A, 10V	3.5V @ 1.2mA	80 nC @ 10 V	±20V	2800 pF @ 100 V	-	255W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3	TO-220-3

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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