Single FETs, MOSFETs

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
PG-HSOF-8-2
MOSFET N-CH 600V 75A 8HSOF
Infineon Technologies
2,679
In Stock
1 : $22.23000
Cut Tape (CT)
2,000 : $11.34185
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
75A (Tc)
10V
28mOhm @ 28.8A, 10V
4V @ 1.44mA
123 nC @ 10 V
±20V
4820 pF @ 400 V
-
391W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-HSOF-8-2
8-PowerSFN
PG-HSOF-8-2
MOSFET N-CH 600V 44A 8HSOF
Infineon Technologies
5,463
In Stock
1 : $14.39000
Cut Tape (CT)
2,000 : $6.42477
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
44A (Tc)
10V
50mOhm @ 15.9A, 10V
4V @ 800µA
68 nC @ 10 V
±20V
2670 pF @ 400 V
-
245W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-HSOF-8-2
8-PowerSFN
PG-HSOF-8-2
MOSFET N-CH 600V 23A 8HSOF
Infineon Technologies
1,105
In Stock
1 : $8.58000
Cut Tape (CT)
2,000 : $3.22918
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
23A (Tc)
10V
102mOhm @ 7.8A, 10V
4V @ 390µA
34 nC @ 10 V
±20V
1320 pF @ 400 V
-
141W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-HSOF-8-2
8-PowerSFN
PG-HSOF-8-2
MOSFET N-CH 600V 29A 8HSOF
Infineon Technologies
5,018
In Stock
1 : $10.34000
Cut Tape (CT)
2,000 : $4.14980
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
29A (Tc)
10V
80mOhm @ 9.7A, 10V
4V @ 490µA
42 nC @ 10 V
±20V
1640 pF @ 400 V
-
167W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
PG-HSOF-8-2
8-PowerSFN
10-PowerSOP Module
MOSFET N-CH 600V 29A HDSOP-10
Infineon Technologies
2,228
In Stock
1 : $10.48000
Cut Tape (CT)
1,700 : $4.22370
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
29A (Tc)
10V
80mOhm @ 9.7A, 10V
4V @ 490µA
42 nC @ 10 V
±20V
1640 pF @ 400 V
-
174W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-HDSOP-10-1
10-PowerSOP Module
10-PowerSOP Module
MOSFET N-CH 600V 47A HDSOP-10
Infineon Technologies
300
In Stock
1 : $14.45000
Cut Tape (CT)
1,700 : $6.45737
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
47A (Tc)
10V
50mOhm @ 15.9A, 10V
4V @ 800µA
68 nC @ 10 V
±20V
2670 pF @ 400 V
-
278W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-HDSOP-10-1
10-PowerSOP Module
10-PowerSOP Module
MOSFET N-CH 600V 13A HDSOP-10
Infineon Technologies
1,570
In Stock
1 : $5.01000
Cut Tape (CT)
1,700 : $1.55906
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
13A (Tc)
10V
190mOhm @ 4.2A, 10V
4V @ 210µA
18 nC @ 10 V
±20V
718 pF @ 400 V
-
76W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-HDSOP-10-1
10-PowerSOP Module
10-PowerSOP Module
MOSFET N-CH 600V 16A HDSOP-10
Infineon Technologies
3,380
In Stock
1 : $6.17000
Cut Tape (CT)
1,700 : $2.07204
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
16A (Tc)
10V
150mOhm @ 5.3A, 10V
4V @ 260µA
23 nC @ 10 V
±20V
902 pF @ 400 V
-
95W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-HDSOP-10-1
10-PowerSOP Module
10-PowerSOP Module
MOSFET N-CH 600V 20A HDSOP-10
Infineon Technologies
1,060
In Stock
1 : $7.11000
Cut Tape (CT)
1,700 : $2.51308
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
20A (Tc)
10V
125mOhm @ 6.4A, 10V
4V @ 320µA
27 nC @ 10 V
±20V
1080 pF @ 400 V
-
120W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-HDSOP-10-1
10-PowerSOP Module
10-PowerSOP Module
MOSFET N-CH 600V 23A HDSOP-10
Infineon Technologies
1,595
In Stock
1 : $8.57000
Cut Tape (CT)
1,700 : $3.22859
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
23A (Tc)
10V
102mOhm @ 7.8A, 10V
4V @ 390µA
34 nC @ 10 V
±20V
1320 pF @ 400 V
-
139W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-HDSOP-10-1
10-PowerSOP Module
PG-HSOF-8-2
MOSFET N-CH 600V 17A 8HSOF
Infineon Technologies
1,304
In Stock
1 : $6.21000
Cut Tape (CT)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
N-Channel
MOSFET (Metal Oxide)
600 V
17A (Tc)
10V
150mOhm @ 5.3A, 10V
4V @ 260µA
23 nC @ 10 V
±20V
902 pF @ 400 V
-
106W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-HSOF-8-2
8-PowerSFN
PG-HSOF-8-2
MOSFET N-CH 600V 20A 8HSOF
Infineon Technologies
0
In Stock
Check Lead Time
1 : $7.19000
Cut Tape (CT)
2,000 : $2.54687
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
20A (Tc)
10V
125mOhm @ 6.4A, 10V
4V @ 320µA
27 nC @ 10 V
±20V
1080 pF @ 400 V
-
120W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-HSOF-8-2
8-PowerSFN
Showing
of 12

Single FET, MOSFETs


Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

  • Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
  • Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

  1. High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
  2. Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
  3. High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.