Single FETs, MOSFETs

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of 17
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-263AB
IXTA1N200P3HV
MOSFET N-CH 2000V 1A TO263
Littelfuse Inc.
1,281
In Stock
1 : $16.77000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
2000 V
1A (Tc)
10V
40Ohm @ 500mA, 10V
4V @ 250µA
23.5 nC @ 10 V
±20V
646 pF @ 25 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263AA
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-268
IXTT1N300P3HV
MOSFET N-CH 3000V 1A TO268
Littelfuse Inc.
1,300
In Stock
1 : $63.86000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
3000 V
1A (Tc)
10V
50Ohm @ 500mA, 10V
4V @ 250µA
30.6 nC @ 10 V
±20V
895 pF @ 25 V
-
195W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-268HV (IXTT)
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-268
IXTT2N300P3HV
MOSFET N-CH 3000V 2A TO268
Littelfuse Inc.
239
In Stock
1 : $77.76000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
3000 V
2A (Tc)
10V
21Ohm @ 1A, 10V
5V @ 250µA
73 nC @ 10 V
±20V
1890 pF @ 25 V
-
520W (Tc)
-55°C ~ 155°C (TJ)
-
-
Surface Mount
TO-268HV (IXTT)
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO 247 HV PLUS EP
IXTX4N300P3HV
MOSFET N-CH 3000V 4A TO247PLUSHV
Littelfuse Inc.
226
In Stock
1 : $117.39000
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Tube
Active
N-Channel
MOSFET (Metal Oxide)
3000 V
4A (Tc)
10V
12.5Ohm @ 2A, 10V
5V @ 250µA
139 nC @ 10 V
±20V
3680 pF @ 25 V
-
960W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247PLUS-HV
TO-247-3 Variant
TO-220-3
IXTP36P15P
MOSFET P-CH 150V 36A TO220AB
Littelfuse Inc.
386
In Stock
1 : $10.78000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
150 V
36A (Tc)
10V
110mOhm @ 18A, 10V
4.5V @ 250µA
55 nC @ 10 V
±20V
3100 pF @ 25 V
-
300W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3
TO 247 HV EP
IXTH1N200P3HV
MOSFET N-CH 2000V 1A TO247HV
Littelfuse Inc.
252
In Stock
1 : $14.10000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
2000 V
1A (Tc)
10V
40Ohm @ 500mA, 10V
4V @ 250µA
23.5 nC @ 10 V
±20V
646 pF @ 25 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247HV
TO-247-3 Variant
TO-247
IXTH3N200P3HV
MOSFET N-CH 2000V 3A TO247
IXYS
217
In Stock
1 : $45.39000
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Tube
Active
N-Channel
MOSFET (Metal Oxide)
2000 V
3A (Tc)
10V
8Ohm @ 1.5A, 10V
5V @ 250µA
70 nC @ 10 V
±20V
1860 pF @ 25 V
-
520W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247 (IXTH)
TO-247-3
TO 247 HV EP
IXTH2N300P3HV
MOSFET N-CH 3000V 2A TO247HV
Littelfuse Inc.
290
In Stock
1 : $63.34000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
3000 V
2A (Tc)
10V
21Ohm @ 1A, 10V
5V @ 250µA
73 nC @ 10 V
±20V
1890 pF @ 25 V
-
520W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247HV
TO-247-3 Variant
TO-220-3
IXTP3N100P
MOSFET N-CH 1000V 3A TO220AB
Littelfuse Inc.
263
In Stock
1 : $7.50000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1000 V
3A (Tc)
10V
4.8Ohm @ 1.5A, 10V
4.5V @ 250µA
39 nC @ 10 V
±20V
1100 pF @ 25 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3
TO-247-AD-EP-(H)
IXTH04N300P3HV
MOSFET N-CH 3000V 400MA TO247HV
Littelfuse Inc.
120
In Stock
300 : $25.01360
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
3000 V
400mA (Tc)
10V
190Ohm @ 200mA, 10V
4V @ 250µA
13 nC @ 10 V
±20V
283 pF @ 25 V
-
104W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247HV
TO-247-3 Variant
TO-268
IXTT3N200P3HV
MOSFET N-CH 2000V 3A TO268
Littelfuse Inc.
300
In Stock
300 : $55.08960
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
2000 V
3A (Tc)
10V
8Ohm @ 1.5A, 10V
5V @ 250µA
70 nC @ 10 V
±20V
1860 pF @ 25 V
-
520W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-268HV (IXTT)
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO 247 HV EP
IXTH1N300P3HV
MOSFET N-CH 3000V 1A TO247HV
Littelfuse Inc.
8
In Stock
1 : $50.22000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
3000 V
1A (Tc)
10V
50Ohm @ 500mA, 10V
4V @ 250µA
30.6 nC @ 10 V
±20V
895 pF @ 25 V
-
195W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247HV
TO-247-3 Variant
TO 247 HV PLUS EP
IXTX6N200P3HV
MOSFET N-CH 2000V 6A TO247PLUSHV
Littelfuse Inc.
15
In Stock
1 : $98.58000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
2000 V
6A (Tc)
10V
4Ohm @ 3A, 10V
5V @ 250µA
143 nC @ 10 V
±20V
3700 pF @ 25 V
-
960W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247PLUS-HV
TO-247-3 Variant
TO-247
IXTH1N200P3
MOSFET N-CH 2000V 1A TO247
IXYS
25
In Stock
1 : $15.47000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
2000 V
1A (Tc)
10V
40Ohm @ 500mA, 10V
4V @ 250µA
23.5 nC @ 10 V
±20V
646 pF @ 25 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247 (IXTH)
TO-247-3
TO 247 HV EP
IXTH06N220P3HV
MOSFET N-CH 2200V 600MA TO247HV
IXYS
0
In Stock
30 : $17.48100
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
2200 V
600mA (Tc)
10V
80Ohm @ 300mA, 10V
4V @ 250µA
10.4 nC @ 10 V
±20V
290 pF @ 25 V
-
104W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247HV
TO-247-3 Variant
ISOPLUS i4-PAK
IXTF6N200P3
MOSFET N-CH 2000V 4A I4PAC
IXYS
0
In Stock
Check Lead Time
300 : $37.81820
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
2000 V
4A (Tc)
10V
4.2Ohm @ 3A, 10V
5V @ 250µA
143 nC @ 10 V
±20V
3700 pF @ 25 V
-
215W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
ISOPLUS i4-PAC™
ISOPLUSi5-PAK™
ISOPLUS i4-PAK
IXTF2N300P3
MOSFET N-CH 3000V 1.6A I4PAC
IXYS
0
In Stock
Check Lead Time
300 : $73.55200
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
3000 V
1.6A (Tc)
10V
21Ohm @ 1A, 10V
5V @ 250µA
73 nC @ 10 V
±20V
1890 pF @ 25 V
-
160W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
ISOPLUS i4-PAC™
ISOPLUSi5-PAK™
Showing
of 17

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.