Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
IXFH26N60P MOSFET N-CH 600V 26A TO247AD IXYS	3,418 In Stock	1 : $15.93000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	26A (Tc)	10V	270mOhm @ 500mA, 10V	5V @ 4mA	72 nC @ 10 V	±30V	4150 pF @ 25 V	-	460W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFH140N10P MOSFET N-CH 100V 140A TO247AD IXYS	274 In Stock	1 : $16.85000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	140A (Tc)	10V	11mOhm @ 70A, 10V	5V @ 4mA	155 nC @ 10 V	±20V	4700 pF @ 25 V	-	600W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFK44N80P MOSFET N-CH 800V 44A TO264AA IXYS	194 In Stock	1 : $35.32000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	44A (Tc)	10V	190mOhm @ 22A, 10V	5V @ 8mA	198 nC @ 10 V	±30V	12000 pF @ 25 V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFN180N15P MOSFET N-CH 150V 150A SOT-227B IXYS	1,423 In Stock	1 : $45.70000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	150A (Tc)	10V	11mOhm @ 90A, 10V	5V @ 4mA	240 nC @ 10 V	±20V	7000 pF @ 25 V	-	680W (Tc)	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN140N20P MOSFET N-CH 200V 115A SOT227B IXYS	823 In Stock	1 : $45.70000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	115A (Tc)	10V, 15V	18mOhm @ 70A, 10V	5V @ 4mA	240 nC @ 10 V	±20V	7500 pF @ 25 V	-	680W (Tc)	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN80N50P MOSFET N-CH 500V 66A SOT227B IXYS	1,965 In Stock	1 : $54.60000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	66A (Tc)	10V	65mOhm @ 500mA, 10V	5V @ 8mA	195 nC @ 10 V	±30V	12700 pF @ 25 V	-	700W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN60N80P MOSFET N-CH 800V 53A SOT-227B IXYS	197 In Stock	1 : $71.25000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	53A (Tc)	10V	140mOhm @ 30A, 10V	5V @ 8mA	250 nC @ 10 V	±30V	18000 pF @ 25 V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN210N20P MOSFET N-CH 200V 188A SOT-227B IXYS	307 In Stock	1 : $73.10000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	188A (Tc)	10V	10.5mOhm @ 105A, 10V	4.5V @ 8mA	255 nC @ 10 V	±20V	18600 pF @ 25 V	-	1070W (Tc)	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN300N10P MOSFET N-CH 100V 295A SOT227B IXYS	101 In Stock	1 : $73.10000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	295A (Tc)	10V	5.5mOhm @ 50A, 10V	5V @ 8mA	279 nC @ 10 V	±20V	23000 pF @ 25 V	-	1070W (Tc)	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN100N50P MOSFET N-CH 500V 90A SOT-227B IXYS	304 In Stock	1 : $73.18000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	90A (Tc)	10V	49mOhm @ 50A, 10V	5V @ 8mA	240 nC @ 10 V	±30V	20000 pF @ 25 V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN56N90P MOSFET N-CH 900V 56A SOT-227B IXYS	250 In Stock	1 : $94.17000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	900 V	56A (Tc)	10V	135mOhm @ 28A, 10V	6.5V @ 3mA	375 nC @ 10 V	±30V	23000 pF @ 25 V	-	1000W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFP16N50P MOSFET N-CH 500V 16A TO220AB IXYS	842 In Stock	1 : $8.73000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	16A (Tc)	10V	400mOhm @ 8A, 10V	5.5V @ 2.5mA	43 nC @ 10 V	±30V	2250 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
IXFH36N60P MOSFET N-CH 600V 36A TO247AD IXYS	719 In Stock	1 : $11.22000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	36A (Tc)	10V	190mOhm @ 18A, 10V	5V @ 4mA	102 nC @ 10 V	±30V	5800 pF @ 25 V	-	650W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFH26N50P MOSFET N-CH 500V 26A TO247AD IXYS	681 In Stock	1 : $13.15000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	26A (Tc)	10V	230mOhm @ 13A, 10V	5.5V @ 4mA	60 nC @ 10 V	±30V	3600 pF @ 25 V	-	400W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFA6N120P MOSFET N-CH 1200V 6A TO263 IXYS	4,449 In Stock	1 : $16.80000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	6A (Tc)	10V	2.4Ohm @ 500mA, 10V	5V @ 1mA	92 nC @ 10 V	±30V	2830 pF @ 25 V	-	250W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263AA (IXFA)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFH36N50P MOSFET N-CH 500V 36A TO247AD IXYS	223 In Stock	1 : $17.63000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	36A (Tc)	10V	170mOhm @ 500mA, 10V	5V @ 4mA	93 nC @ 10 V	±30V	5500 pF @ 25 V	-	540W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFH24N80P MOSFET N-CH 800V 24A TO247AD IXYS	608 In Stock	1 : $20.68000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	24A (Tc)	10V	400mOhm @ 12A, 10V	5V @ 4mA	105 nC @ 10 V	±30V	7200 pF @ 25 V	-	650W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFK44N50P MOSFET N-CH 500V 44A TO264AA IXYS	306 In Stock	1 : $21.31000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	44A (Tc)	10V	140mOhm @ 22A, 10V	5V @ 4mA	98 nC @ 10 V	±30V	5440 pF @ 25 V	-	658W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFT96N20P MOSFET N-CH 200V 96A TO268 IXYS	220 In Stock	1 : $21.32000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	96A (Tc)	10V	24mOhm @ 500mA, 10V	5V @ 4mA	145 nC @ 10 V	±20V	4800 pF @ 25 V	-	600W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-268AA	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
IXFR140N20P MOSFET N-CH 200V 90A ISOPLUS247 IXYS	4,147 In Stock	1 : $26.60000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	90A (Tc)	10V	22mOhm @ 45A, 10V	5V @ 4mA	240 nC @ 10 V	±20V	7500 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	ISOPLUS247™	TO-247-3
IXFK140N20P MOSFET N-CH 200V 140A TO264AA IXYS	300 In Stock	1 : $27.22000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	140A (Tc)	10V, 15V	18mOhm @ 70A, 10V	5V @ 4mA	240 nC @ 10 V	±20V	7500 pF @ 25 V	-	830W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFK200N10P MOSFET N-CH 100V 200A TO264AA IXYS	117 In Stock	1 : $29.20000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	200A (Tc)	10V	7.5mOhm @ 100A, 10V	5V @ 8mA	235 nC @ 10 V	±20V	7600 pF @ 25 V	-	830W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFK64N60P MOSFET N-CH 600V 64A TO264AA IXYS	384 In Stock	1 : $35.90000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	64A (Tc)	10V	96mOhm @ 500mA, 10V	5V @ 8mA	200 nC @ 10 V	±30V	12000 pF @ 25 V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFK140N30P MOSFET N-CH 300V 140A TO264AA IXYS	681 In Stock	1 : $36.61000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	300 V	140A (Tc)	10V	24mOhm @ 70A, 10V	5V @ 8mA	185 nC @ 10 V	±20V	14800 pF @ 25 V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFR44N80P MOSFET N-CH 800V 25A ISOPLUS247 IXYS	125 In Stock	1 : $37.29000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	25A (Tc)	10V	200mOhm @ 22A, 10V	5V @ 8mA	200 nC @ 10 V	±30V	12000 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	ISOPLUS247™	TO-247-3

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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