Single FETs, MOSFETs

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-247-3
G2R1000MT17D
SIC MOSFET N-CH 4A TO247-3
GeneSiC Semiconductor
6,631
In Stock
1 : $8.32000
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N-Channel
SiCFET (Silicon Carbide)
1700 V
5A (Tc)
20V
1.2Ohm @ 2A, 20V
5.5V @ 500µA
11 nC @ 20 V
+25V, -10V
111 pF @ 1000 V
-
44W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
G2R50MT33K
G2R50MT33K
3300V 50M TO-247-4 SIC MOSFET
GeneSiC Semiconductor
46
In Stock
1 : $452.38000
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SiCFET (Silicon Carbide)
3300 V
63A (Tc)
20V
50mOhm @ 40A, 20V
3.5V @ 10mA (Typ)
340 nC @ 20 V
+25V, -10V
7301 pF @ 1000 V
-
536W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4
TO-263-8
G2R1000MT17J
SIC MOSFET N-CH 3A TO263-7
GeneSiC Semiconductor
11,444
In Stock
1 : $9.85000
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N-Channel
SiCFET (Silicon Carbide)
1700 V
3A (Tc)
20V
1.2Ohm @ 2A, 20V
4V @ 2mA
-
+20V, -10V
139 pF @ 1000 V
-
54W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-263-8
G2R1000MT33J
SIC MOSFET N-CH 4A TO263-7
GeneSiC Semiconductor
1,877
In Stock
1 : $28.60000
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N-Channel
SiCFET (Silicon Carbide)
3300 V
4A (Tc)
20V
1.2Ohm @ 2A, 20V
3.5V @ 2mA
21 nC @ 20 V
+20V, -5V
238 pF @ 1000 V
-
74W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-263-8
G2R120MT33J
SIC MOSFET N-CH TO263-7
GeneSiC Semiconductor
0
In Stock
Check Lead Time
100 : $142.27490
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N-Channel
SiCFET (Silicon Carbide)
3300 V
35A
20V
156mOhm @ 20A, 20V
-
145 nC @ 20 V
+25V, -10V
3706 pF @ 1000 V
-
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Showing
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.