Single FETs, MOSFETs

Results: 24
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-247-3
G3R160MT12D
SIC MOSFET N-CH 22A TO247-3
GeneSiC Semiconductor
2,918
In Stock
1 : $10.43000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
22A (Tc)
15V
192mOhm @ 10A, 15V
2.69V @ 5mA
28 nC @ 15 V
±15V
730 pF @ 800 V
-
123W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-3
G3R450MT17D
SIC MOSFET N-CH 9A TO247-3
GeneSiC Semiconductor
2,540
In Stock
1 : $11.54000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
9A (Tc)
15V
585mOhm @ 4A, 15V
2.7V @ 2mA
18 nC @ 15 V
±15V
454 pF @ 1000 V
-
88W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-3
G3R75MT12D
SIC MOSFET N-CH 41A TO247-3
GeneSiC Semiconductor
2,280
In Stock
1 : $16.80000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
41A (Tc)
15V
90mOhm @ 20A, 15V
2.69V @ 7.5mA
54 nC @ 15 V
+22V, -10V
1560 pF @ 800 V
-
207W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-4 Top
G3R75MT12K
SIC MOSFET N-CH 41A TO247-4
GeneSiC Semiconductor
1,079
In Stock
1 : $17.23000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
41A (Tc)
15V
90mOhm @ 20A, 15V
2.69V @ 7.5mA
54 nC @ 15 V
+22V, -10V
1560 pF @ 800 V
-
207W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
TO-247-3
G3R160MT17D
SIC MOSFET N-CH 21A TO247-3
GeneSiC Semiconductor
629
In Stock
1 : $19.58000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
21A (Tc)
15V
208mOhm @ 12A, 15V
2.7V @ 5mA
51 nC @ 15 V
±15V
1272 pF @ 1000 V
-
175W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-3
G3R40MT12D
SIC MOSFET N-CH 71A TO247-3
GeneSiC Semiconductor
796
In Stock
1 : $27.87000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
71A (Tc)
15V
48mOhm @ 35A, 15V
2.69V @ 10mA
106 nC @ 15 V
±15V
2929 pF @ 800 V
-
333W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-4 Top
G3R40MT12K
SIC MOSFET N-CH 71A TO247-4
GeneSiC Semiconductor
1,958
In Stock
1 : $28.27000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
71A (Tc)
15V
48mOhm @ 35A, 15V
2.69V @ 10mA
106 nC @ 15 V
±15V
2929 pF @ 800 V
-
333W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
TO-247-4 Top
G3R30MT12K
SIC MOSFET N-CH 90A TO247-4
GeneSiC Semiconductor
1,251
In Stock
1 : $36.05000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
90A (Tc)
15V
36mOhm @ 50A, 15V
2.69V @ 12mA
155 nC @ 15 V
±15V
3901 pF @ 800 V
-
400W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
TO-247-3
G3R45MT17D
SIC MOSFET N-CH 61A TO247-3
GeneSiC Semiconductor
879
In Stock
1 : $52.37000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
61A (Tc)
15V
58mOhm @ 40A, 15V
2.7V @ 8mA
182 nC @ 15 V
±15V
4523 pF @ 1000 V
-
438W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-4 Top
G3R45MT17K
SIC MOSFET N-CH 61A TO247-4
GeneSiC Semiconductor
724
In Stock
1 : $52.91000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
61A (Tc)
15V
58mOhm @ 40A, 15V
2.7V @ 8mA
182 nC @ 15 V
±15V
4523 pF @ 1000 V
-
438W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
TO-247-4 Top
G3R20MT12K
SIC MOSFET N-CH 128A TO247-4
GeneSiC Semiconductor
810
In Stock
1 : $57.74000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
128A (Tc)
15V
24mOhm @ 60A, 15V
2.69V @ 15mA
219 nC @ 15 V
±15V
5873 pF @ 800 V
-
542W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
GA100JT12-227
G3R20MT12N
SIC MOSFET N-CH 105A SOT227
GeneSiC Semiconductor
145
In Stock
1 : $89.92000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
105A (Tc)
15V
24mOhm @ 60A, 15V
2.69V @ 15mA
219 nC @ 15 V
+20V, -10V
5873 pF @ 800 V
-
365W (Tc)
-55°C ~ 175°C (TJ)
-
-
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
TO-247-4 Top
G3R20MT17K
SIC MOSFET N-CH 124A TO247-4
GeneSiC Semiconductor
439
In Stock
1 : $171.52000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
124A (Tc)
15V
26mOhm @ 75A, 15V
2.7V @ 15mA
400 nC @ 15 V
±15V
10187 pF @ 1000 V
-
809W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
GA100JT12-227
G3R20MT17N
SIC MOSFET N-CH 100A SOT227
GeneSiC Semiconductor
146
In Stock
1 : $216.74000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
100A (Tc)
15V
26mOhm @ 75A, 15V
2.7V @ 15mA
400 nC @ 15 V
±15V
10187 pF @ 1000 V
-
523W (Tc)
-55°C ~ 175°C (TJ)
-
-
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
TO-247-3
G3R350MT12D
SIC MOSFET N-CH 11A TO247-3
GeneSiC Semiconductor
8,142
In Stock
1 : $7.58000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
11A (Tc)
15V
420mOhm @ 4A, 15V
2.69V @ 2mA
12 nC @ 15 V
±15V
334 pF @ 800 V
-
74W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-4 Top
G3R60MT07K
750V 60M TO-247-4 G3R SIC MOSFET
GeneSiC Semiconductor
1,079
In Stock
1 : $16.64000
Tube
Tube
Active
-
SiCFET (Silicon Carbide)
750 V
-
-
-
-
-
+20V, -10V
-
-
-
-
-
-
Through Hole
TO-247-4
TO-247-4
TO-247-3
G3R60MT07D
750V 60M TO-247-3 G3R SIC MOSFET
GeneSiC Semiconductor
1,839
In Stock
1 : $16.22000
Tube
Tube
Active
-
SiCFET (Silicon Carbide)
750 V
-
-
-
-
-
+20V, -10V
-
-
-
-
-
-
Through Hole
TO-247-3
TO-247-3
TO-263-8
G3R160MT12J
SIC MOSFET N-CH 19A TO263-7
GeneSiC Semiconductor
415
In Stock
1 : $11.62000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
19A (Tc)
15V
208mOhm @ 10A, 15V
2.7V @ 5mA (Typ)
23 nC @ 15 V
+20V, -10V
724 pF @ 800 V
-
128W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-263-8
G3R450MT17J
SIC MOSFET N-CH 9A TO263-7
GeneSiC Semiconductor
5,393
In Stock
1 : $12.86000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
9A (Tc)
15V
585mOhm @ 4A, 15V
2.7V @ 2mA
18 nC @ 15 V
±15V
454 pF @ 1000 V
-
91W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-263-8
G3R60MT07J
750V 60M TO-263-7 G3R SIC MOSFET
GeneSiC Semiconductor
198
In Stock
1 : $17.12000
Tube
Tube
Active
-
SiCFET (Silicon Carbide)
750 V
-
-
-
-
-
+20V, -10V
-
-
-
-
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-263-8
G3R40MT12J
SIC MOSFET N-CH 75A TO263-7
GeneSiC Semiconductor
421
In Stock
1 : $28.77000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
75A (Tc)
15V
48mOhm @ 35A, 15V
2.7V @ 18mA (Typ)
106 nC @ 15 V
±15V
2929 pF @ 800 V
-
374W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-263-8
G3R350MT12J
SIC MOSFET N-CH 11A TO263-7
GeneSiC Semiconductor
0
In Stock
Check Lead Time
1,000 : $6.25603
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
11A (Tc)
15V
420mOhm @ 4A, 15V
2.69V @ 2mA
12 nC @ 15 V
±15V
334 pF @ 800 V
-
75W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-263-8
G3R75MT12J
SIC MOSFET N-CH 42A TO263-7
GeneSiC Semiconductor
2
In Stock
1 : $17.65000
Tube
Tube
Obsolete
N-Channel
SiCFET (Silicon Carbide)
1200 V
42A (Tc)
15V
90mOhm @ 20A, 15V
2.69V @ 7.5mA
54 nC @ 15 V
±15V
1560 pF @ 800 V
-
224W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-263-8
G3R30MT12J
SIC MOSFET N-CH 96A TO263-7
GeneSiC Semiconductor
0
In Stock
Check Lead Time
1,000 : $27.92800
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
96A (Tc)
15V
36mOhm @ 50A, 15V
2.69V @ 12mA
155 nC @ 15 V
±15V
3901 pF @ 800 V
-
459W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Showing
of 24

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.