Single FETs, MOSFETs

Results: 14
Manufacturer
Infineon TechnologiesQorvoSTMicroelectronicsWolfspeed, Inc.
Series
-448C3M™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveLast Time Buy
Technology
SiCFET (Cascode SiCJFET)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V750 V900 V1200 V
Current - Continuous Drain (Id) @ 25°C
6A (Tc)7.2A (Tc)11A (Tc)17A (Tc)18A (Tc)21A (Tc)25.8A (Tc)30A (Tc)33A (Tc)36A (Tc)39A (Tc)49A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
12V15V15V, 18V18V
Rds On (Max) @ Id, Vgs
55mOhm @ 20A, 18V60mOhm @ 17.6A, 15V72mOhm @ 15A, 18V74mOhm @ 20A, 12V79mOhm @ 13.2A, 15V94mOhm @ 13.3A, 18V157mOhm @ 6.76A, 15V189mOhm @ 6A, 18V208mOhm @ 8.5A, 15V346mOhm @ 3.6A, 18V360mOhm @ 7.5A, 15V455mOhm @ 3.6A, 15V
Vgs(th) (Max) @ Id
3.5V @ 1.2mA3.6V @ 1.86mA3.6V @ 1mA3.6V @ 2.33mA3.6V @ 3.64mA3.6V @ 4.84mA3.6V @ 5mA4.2V @ 1mA5.7V @ 1.1mA5.7V @ 2.5mA5.7V @ 4mA6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
6 nC @ 18 V9.5 nC @ 15 V13 nC @ 15 V13.4 nC @ 18 V22 nC @ 18 V26 nC @ 15 V29 nC @ 18 V37.8 nC @ 15 V38 nC @ 15 V39.5 nC @ 18 V46 nC @ 15 V59 nC @ 15 V
Vgs (Max)
+15V, -4V+18V, -15V+18V, -5V+18V, -8V+19V, -8V±20V+22V, -10V+23V, -5V
Input Capacitance (Ciss) (Max) @ Vds
150 pF @ 600 V201 pF @ 400 V345 pF @ 1000 V491 pF @ 800 V632 pF @ 1000 V640 pF @ 400 V721 pF @ 400 V744 pF @ 400 V920 pF @ 400 V1020 pF @ 600 V1170 pF @ 400 V1420 pF @ 400 V1621 pF @ 400 V
Power Dissipation (Max)
40.8W (Tc)50W (Tc)65W (Tc)86W (Tc)97W (Tc)107W (Tc)128W (Tc)131W (Tc)136W (Tc)140W (Tc)164W (Tc)185W (Tc)221W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
D2PAK-7H2PAK-7HU3PAKPG-TO263-7-12TO-247-3TO-263-7TOLL
Package / Case
8-PowerSFNTO-247-3TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Stocking Options
Environmental Options
Media
Marketplace Product
14Results
Showing
of 14
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
PG-TO263-7-12
IMBG120R140M1HXTMA1
SICFET N-CH 1.2KV 18A TO263
Infineon Technologies
998
In Stock
1 : $9.50000
Cut Tape (CT)
1,000 : $4.65978
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
18A (Tc)
-
189mOhm @ 6A, 18V
5.7V @ 2.5mA
13.4 nC @ 18 V
+18V, -15V
491 pF @ 800 V
-
107W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
C3M0280090J-TR
C3M0280090J-TR
SICFET N-CH 900V 11A D2PAK-7
Wolfspeed, Inc.
15,117
In Stock
1 : $11.72000
Cut Tape (CT)
800 : $6.08650
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
SiCFET (Silicon Carbide)
900 V
11A (Tc)
15V
360mOhm @ 7.5A, 15V
3.5V @ 1.2mA
9.5 nC @ 15 V
+18V, -8V
150 pF @ 600 V
-
50W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
PG-TO263-7-12
IMBG65R260M1HXTMA1
SILICON CARBIDE MOSFET PG-TO263-
Infineon Technologies
877
In Stock
1 : $6.53000
Cut Tape (CT)
1,000 : $2.98238
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
6A (Tc)
18V
346mOhm @ 3.6A, 18V
5.7V @ 1.1mA
6 nC @ 18 V
+23V, -5V
201 pF @ 400 V
-
65W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
C3M0065090J
C3M0350120J
SICFET N-CH 1200V 7.2A TO263-7
Wolfspeed, Inc.
406
In Stock
1 : $11.13000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
7.2A (Tc)
15V
455mOhm @ 3.6A, 15V
3.6V @ 1mA
13 nC @ 15 V
+15V, -4V
345 pF @ 1000 V
-
40.8W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
C2D10120D
C3M0160120D
SICFET N-CH 1200V 17A TO247-3
Wolfspeed, Inc.
1,897
In Stock
1 : $12.25000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
17A (Tc)
15V
208mOhm @ 8.5A, 15V
3.6V @ 2.33mA
38 nC @ 15 V
+15V, -4V
632 pF @ 1000 V
-
97W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
C3M0065090J
C3M0060065J
SICFET N-CH 650V 36A TO263-7
Wolfspeed, Inc.
3,540
In Stock
1 : $18.62000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
36A (Tc)
15V
79mOhm @ 13.2A, 15V
3.6V @ 5mA
46 nC @ 15 V
+15V, -4V
1020 pF @ 600 V
-
136W (Tc)
-40°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
C3M0045065L
C3M0060065L-TR
SIC, MOSFET, 60M, 650V, TOLL, IN
Wolfspeed, Inc.
2,331
In Stock
1 : $20.14000
Cut Tape (CT)
2,000 : $12.06200
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
39A (Tc)
15V
79mOhm @ 13.2A, 15V
3.6V @ 3.64mA
46 nC @ 15 V
+19V, -8V
1170 pF @ 400 V
-
131W (Tc)
-40°C ~ 175°C (TJ)
-
-
Surface Mount
TOLL
8-PowerSFN
UF3C120080B7S
UJ4C075060B7S
750V/60MOHM, N-OFF SIC CASCODE,
Qorvo
1,039
In Stock
1 : $9.80000
Cut Tape (CT)
800 : $6.56750
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Cascode SiCJFET)
750 V
25.8A (Tc)
12V
74mOhm @ 20A, 12V
6V @ 10mA
37.8 nC @ 15 V
±20V
1420 pF @ 400 V
-
128W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
PG-TO263-7-12
IMBG65R072M1HXTMA1
SILICON CARBIDE MOSFET PG-TO263-
Infineon Technologies
817
In Stock
1 : $11.20000
Cut Tape (CT)
1,000 : $5.96921
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
33A (Tc)
18V
94mOhm @ 13.3A, 18V
5.7V @ 4mA
22 nC @ 18 V
+23V, -5V
744 pF @ 400 V
-
140W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
C3M0280090J-TR
C3M0280090J
SICFET N-CH 900V 11A D2PAK-7
Wolfspeed, Inc.
1,117
In Stock
1 : $11.72000
Tube
Tube
Last Time Buy
N-Channel
SiCFET (Silicon Carbide)
900 V
11A (Tc)
15V
360mOhm @ 7.5A, 15V
3.5V @ 1.2mA
9.5 nC @ 15 V
+18V, -8V
150 pF @ 600 V
-
50W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
C3M0065090J-TR
C3M0120065J-TR
SIC, MOSFET, 120M, 650V, TO-263-
Wolfspeed, Inc.
790
In Stock
1 : $13.45000
Cut Tape (CT)
800 : $7.25200
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
SiCFET (Silicon Carbide)
650 V
21A (Tc)
15V
157mOhm @ 6.76A, 15V
3.6V @ 1.86mA
26 nC @ 15 V
+19V, -8V
640 pF @ 400 V
-
86W (Tc)
-40°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
AUTOMOTIVE-GRADE SILICON CARBIDE
SCT055HU65G3AG
AUTOMOTIVE-GRADE SILICON CARBIDE
STMicroelectronics
545
In Stock
1 : $18.10000
Cut Tape (CT)
600 : $10.54500
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
30A (Tc)
15V, 18V
72mOhm @ 15A, 18V
4.2V @ 1mA
29 nC @ 18 V
+22V, -10V
721 pF @ 400 V
-
185W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
HU3PAK
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
C3M0045065L
C3M0045065L-TR
SIC, MOSFET, 45M, 650V, TOLL, IN
Wolfspeed, Inc.
1,788
In Stock
1 : $23.87000
Cut Tape (CT)
2,000 : $14.91100
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
49A (Tc)
15V
60mOhm @ 17.6A, 15V
3.6V @ 4.84mA
59 nC @ 15 V
+19V, -8V
1621 pF @ 400 V
-
164W (Tc)
-40°C ~ 175°C (TJ)
-
-
Surface Mount
TOLL
8-PowerSFN
TO-263-7
SCT040H65G3AG
AUTOMOTIVE-GRADE SILICON CARBIDE
STMicroelectronics
0
In Stock
Check Lead Time
1 : $18.72000
Cut Tape (CT)
1,000 : $11.00750
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
30A (Tc)
15V, 18V
55mOhm @ 20A, 18V
4.2V @ 1mA
39.5 nC @ 18 V
+18V, -5V
920 pF @ 400 V
-
221W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
H2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Showing
of 14

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.