Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
IXTQ460P2 MOSFET N-CH 500V 24A TO3P Littelfuse Inc.	363 In Stock	1 : $9.97000 Tube	PolarP2™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	24A (Tc)	10V	270mOhm @ 12A, 10V	4.5V @ 250µA	48 nC @ 10 V	±30V	2890 pF @ 25 V	-	480W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXTQ22N50P MOSFET N-CH 500V 22A TO3P Littelfuse Inc.	63 In Stock	1 : $9.78000 Tube	Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	22A (Tc)	10V	270mOhm @ 11A, 10V	5.5V @ 250µA	50 nC @ 10 V	±30V	2630 pF @ 25 V	-	350W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXTH22N50P MOSFET N-CH 500V 22A TO247 IXYS	20 In Stock	1 : $10.11000 Tube	Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	22A (Tc)	10V	270mOhm @ 11A, 10V	5.5V @ 250µA	50 nC @ 10 V	±30V	2630 pF @ 25 V	-	350W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)	TO-247-3

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.