Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
GS61004BMRXUSA1 GS61004B-MR Infineon Technologies	712 In Stock	1 : $9.16000 Cut Tape (CT) 250 : $3.92696 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	45A (Tc)	6V	20mOhm @ 13.5A, 6V	1.3V @ 7mA	6.2 nC @ 6 V	+7V, -10V	295 pF @ 50 V	-	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	-	3-SMD, No Lead
SI2324DS-T1-GE3 MOSFET N-CH 100V 2.3A SOT23-3 Vishay Siliconix	38,956 In Stock	1 : $0.64000 Cut Tape (CT) 3,000 : $0.29854 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	2.3A (Tc)	10V	234mOhm @ 1.5A, 10V	2.9V @ 250µA	10.4 nC @ 10 V	±20V	190 pF @ 50 V	-	1.25W (Ta), 2.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
SQ3426EV-T1_GE3 MOSFET N-CHANNEL 60V 7A 6TSOP Vishay Siliconix	23,893 In Stock	1 : $1.90000 Cut Tape (CT) 3,000 : $0.47998 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	7A (Tc)	4.5V, 10V	42mOhm @ 5A, 10V	2.5V @ 250µA	12 nC @ 4.5 V	±20V	720 pF @ 30 V	-	5W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.