Single FETs, MOSFETs

Results: 9
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
PG-TDSON-8-1
BSC320N20NS3GATMA1
MOSFET N-CH 200V 36A TDSON-8
Infineon Technologies
10,171
In Stock
1 : $5.07000
Cut Tape (CT)
5,000 : $1.64380
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
36A (Tc)
10V
32mOhm @ 36A, 10V
4V @ 90µA
29 nC @ 10 V
±20V
2350 pF @ 100 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
PG-TDSON-8-1
BSC600N25NS3GATMA1
MOSFET N-CH 250V 25A TDSON-8-1
Infineon Technologies
17,910
In Stock
1 : $6.64000
Cut Tape (CT)
5,000 : $2.37500
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
250 V
25A (Tc)
10V
60mOhm @ 25A, 10V
4V @ 90µA
29 nC @ 10 V
±20V
2350 pF @ 100 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
8-PQFN
FDMS86350ET80
MOSFET N-CH 80V 25A/198A POWER56
onsemi
4,953
In Stock
1 : $11.97000
Cut Tape (CT)
3,000 : $5.02120
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
25A (Ta), 198A (Tc)
8V, 10V
2.4mOhm @ 25A, 10V
4.5V @ 250µA
155 nC @ 10 V
±20V
8030 pF @ 40 V
-
3.3W (Ta), 187W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
8-PQFN (5x6)
8-PowerTDFN
PG-SOT223-4
BSP317PH6327XTSA1
MOSFET P-CH 250V 430MA SOT223-4
Infineon Technologies
5,155
In Stock
1 : $1.86000
Cut Tape (CT)
1,000 : $0.53875
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
250 V
430mA (Ta)
4.5V, 10V
4Ohm @ 430mA, 10V
2V @ 370µA
15.1 nC @ 10 V
±20V
262 pF @ 25 V
-
1.8W (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-SOT223-4
TO-261-4, TO-261AA
PG-SOT223-4
BSP297H6327XTSA1
MOSFET N-CH 200V 660MA SOT223-4
Infineon Technologies
8,315
In Stock
1 : $1.87000
Cut Tape (CT)
1,000 : $0.54686
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
660mA (Ta)
4.5V, 10V
1.8Ohm @ 660mA, 10V
1.8V @ 400µA
16.1 nC @ 10 V
±20V
357 pF @ 25 V
-
1.8W (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-SOT223-4
TO-261-4, TO-261AA
PG-TDSON-8-1
BSC670N25NSFDATMA1
MOSFET N-CH 250V 24A TDSON-8-1
Infineon Technologies
15,655
In Stock
1 : $6.38000
Cut Tape (CT)
5,000 : $2.25000
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
250 V
24A (Tc)
10V
67mOhm @ 24A, 10V
4V @ 90µA
30 nC @ 10 V
±20V
2410 pF @ 125 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
PG-TO220-3-1
IPP60R080P7XKSA1
MOSFET N-CH 650V 37A TO220-3
Infineon Technologies
187
In Stock
1 : $8.00000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
37A (Tc)
10V
80mOhm @ 11.8A, 10V
4V @ 590µA
51 nC @ 10 V
±20V
2180 pF @ 400 V
-
129W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO220-3
TO-220-3
IHW15N120R3FKSA1
IPW60R165CPFKSA1
MOSFET N-CH 600V 21A TO247-3
Infineon Technologies
240
In Stock
1 : $8.86000
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
600 V
21A (Tc)
10V
165mOhm @ 12A, 10V
3.5V @ 790µA
52 nC @ 10 V
±20V
2000 pF @ 100 V
-
192W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3-1
TO-247-3
5,100
In Stock
1 : $12.18000
Cut Tape (CT)
3,000 : $5.34180
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
29A (Tc)
10V
65mOhm @ 15.9A, 10V
4V @ 800µA
68 nC @ 10 V
±20V
2850 pF @ 400 V
-
180W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
PG-VSON-4-1
4-PowerTSFN
Showing
of 9

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.