Single FETs, MOSFETs

Results: 2
Series
HiPerFET™, Ultra X3TrenchP™
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
100 V300 V
Rds On (Max) @ Id, Vgs
4.6mOhm @ 105A, 10V7.5mOhm @ 105A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
375 nC @ 10 V740 nC @ 10 V
Vgs (Max)
±15V±20V
Input Capacitance (Ciss) (Max) @ Vds
24200 pF @ 25 V69500 pF @ 25 V
Power Dissipation (Max)
695W (Tc)830W (Tc)
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Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IXYK1x0xNxxxx
IXFN210N30X3
MOSFET N-CH 300V 210A SOT227B
Littelfuse Inc.
7
In Stock
1 : $72.35000
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N-Channel
MOSFET (Metal Oxide)
300 V
210A (Tc)
10V
4.6mOhm @ 105A, 10V
4.5V @ 8mA
375 nC @ 10 V
±20V
24200 pF @ 25 V
-
695W (Tc)
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
IXYK1x0xNxxxx
IXTN210P10T
MOSFET P-CH 100V 210A SOT227B
Littelfuse Inc.
0
In Stock
Check Lead Time
1 : $78.41000
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P-Channel
MOSFET (Metal Oxide)
100 V
210A (Tc)
10V
7.5mOhm @ 105A, 10V
4.5V @ 250µA
740 nC @ 10 V
±15V
69500 pF @ 25 V
-
830W (Tc)
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.