Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
BUK98150-55A/CUF MOSFET N-CH 55V 5.5A SOT223 Nexperia USA Inc.	11,402 In Stock	1 : $1.24000 Cut Tape (CT) 4,000 : $0.25138 Tape & Reel (TR)	TrenchMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	55 V	5.5A (Tc)	4.5V, 10V	137mOhm @ 5A, 10V	2V @ 1mA	5.3 nC @ 5 V	±15V	320 pF @ 25 V	-	8W (Tc)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-223	TO-261-4, TO-261AA
IRL60HS118 MOSFET N-CH 60V 18.5A 6PQFN Infineon Technologies	23,302 In Stock	1 : $1.99000 Cut Tape (CT) 4,000 : $0.50925 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	18.5A (Tc)	4.5V, 10V	17mOhm @ 11A, 10V	2.3V @ 10µA	8 nC @ 4.5 V	±20V	660 pF @ 25 V	-	11.5W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	6-PQFN (2x2) (DFN2020)	6-PowerVDFN
IPD046N08N5ATMA1 MOSFET N-CH 80V 90A TO252-3 Infineon Technologies	4,568 In Stock	1 : $4.82000 Cut Tape (CT) 2,500 : $1.63770 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	80 V	90A (Tc)	6V, 10V	4.6mOhm @ 45A, 10V	3.8V @ 65µA	53 nC @ 10 V	±20V	3800 pF @ 40 V	-	125W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.