Single FETs, MOSFETs

Showing

of 2

	Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
	IPP041N12N3GXKSA1 MOSFET N-CH 120V 120A TO220-3 Infineon Technologies	165 In Stock	1 : $7.14000 Tube	OptiMOS™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	120 V	120A (Tc)	10V	4.1mOhm @ 100A, 10V	4V @ 270µA	211 nC @ 10 V	±20V	13800 pF @ 60 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO220-3	TO-220-3
	ISC030N12NM6ATMA1 OPTIMOS 6 POWER-TRANSISTOR,120V Infineon Technologies	4,701 In Stock	1 : $8.48000 Cut Tape (CT) 5,000 : $3.61379 Tape & Reel (TR)	OptiMOS™ 6	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	120 V	21A (Ta), 194A (Tc)	8V, 10V	3.04mOhm @ 50A, 10V	3.6V @ 141µA	74 nC @ 10 V	±20V	5500 pF @ 60 V	-	3W (Ta), 250W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TSON-8-3	8-PowerTDFN

Showing

of 2

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.