Single FETs, MOSFETs

Results: 5
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-3P
IXTQ40N50L2
MOSFET N-CH 500V 40A TO3P
Littelfuse Inc.
390
In Stock
1 : $26.44000
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MOSFET (Metal Oxide)
500 V
40A (Tc)
10V
170mOhm @ 20A, 10V
4.5V @ 250µA
320 nC @ 10 V
±20V
10400 pF @ 25 V
-
540W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
TO-247
IXTH60N20L2
MOSFET N-CH 200V 60A TO247
Littelfuse Inc.
333
In Stock
1 : $27.34000
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MOSFET (Metal Oxide)
200 V
60A (Tc)
10V
45mOhm @ 30A, 10V
4.5V @ 250µA
255 nC @ 10 V
±20V
10500 pF @ 25 V
-
540W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247 (IXTH)
TO-247-3
SOT-227-4, miniBLOC
IXTN110N20L2
MOSFET N-CH 200V 100A SOT227B
Littelfuse Inc.
308
In Stock
1 : $54.30000
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MOSFET (Metal Oxide)
200 V
100A (Tc)
10V
24mOhm @ 55A, 10V
4.5V @ 3mA
500 nC @ 10 V
±20V
23000 pF @ 25 V
-
735W (Tc)
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
TO-247-3 Variant
IXTX110N20L2
MOSFET N-CH 200V 110A PLUS247-3
Littelfuse Inc.
0
In Stock
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1 : $55.06000
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MOSFET (Metal Oxide)
200 V
110A (Tc)
10V
24mOhm @ 55A, 10V
4.5V @ 3mA
500 nC @ 10 V
±20V
23000 pF @ 25 V
-
960W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PLUS247™-3
TO-247-3 Variant
TO-264
IXTK60N50L2
MOSFET N-CH 500V 60A TO264
Littelfuse Inc.
0
In Stock
Check Lead Time
1 : $55.42000
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MOSFET (Metal Oxide)
500 V
60A (Tc)
10V
100mOhm @ 30A, 10V
4.5V @ 250µA
610 nC @ 10 V
±30V
24000 pF @ 25 V
-
960W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-264 (IXTK)
TO-264-3, TO-264AA
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.