Single FETs, MOSFETs

Results: 9
Manufacturer
Infineon TechnologiesMicro Commercial CoNexperia USA Inc.onsemiSTMicroelectronics
Series
-CoolMOS™CoolMOS™ P7OptiMOS™ 7StrongIRFET™ 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
40 V100 V600 V650 V
Current - Continuous Drain (Id) @ 25°C
17A (Tc)26A (Tc)33A (Ta), 294A (Tc)35A (Ta), 315A (Tc)175A290A (Tc)300A (Tc)370A (Tc)373A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V7V, 10V10V
Rds On (Max) @ Id, Vgs
0.44mOhm @ 88A, 10V0.67mOhm @ 50A, 10V0.75mOhm @ 60A, 10V1mOhm @ 25A, 10V1.45mOhm @ 30A, 10V1.5mOhm @ 150A, 10V1.75mOhm @ 150A, 10V120mOhm @ 8.2A, 10V145mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA3V @ 130µA3.6V @ 1mA3.8V @ 216µA3.8V @ 267µA4V @ 250µA4V @ 410µA4.5V @ 420µA
Gate Charge (Qg) (Max) @ Vgs
36 nC @ 10 V81 nC @ 4.5 V95 nC @ 10 V122 nC @ 10 V169 nC @ 10 V195 nC @ 10 V240 nC @ 10 V242 nC @ 10 V
Vgs (Max)
±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
1544 pF @ 400 V1694 pF @ 400 V7657 pF @ 25 V9300 pF @ 50 V9433 pF @ 20 V11000 pF @ 50 V11310 pF @ 20 V12168 pF @ 25 V13258 pF @ 50 V
FET Feature
-Schottky Diode (Body)
Power Dissipation (Max)
3.8W (Ta), 300W (Tc)95W (Tc)98W (Tc)188W (Tc)200W (Tc)219W (Tc)333W (Tc)500W
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)
Mounting Type
Surface MountSurface Mount, Wettable Flank
Supplier Device Package
5-DFN (5x6) (8-SOFL)LFPAK56; Power-SO8PG-HSOF-8-10PG-TDSON-8-53PG-TO263-3PowerFlat™ (5x6)TOLL-8L
Package / Case
8-PowerSFN8-PowerTDFN8-PowerTDFN, 5 Leads8-PowerVDFNSOT-1023, 4-LFPAKTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
9Results

Showing
of 9
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
2,934
In Stock
1 : $5.08000
Cut Tape (CT)
5,000 : $1.69097
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
175A
7V, 10V
0.44mOhm @ 88A, 10V
3V @ 130µA
169 nC @ 10 V
±20V
11310 pF @ 20 V
-
219W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-TDSON-8-53
8-PowerTDFN
5-DFN, 8-SO Flat Lead
NVMFS5C404NLAFT1G
MOSFET N-CH 40V 370A 5DFN
onsemi
1,445
In Stock
1 : $6.11000
Cut Tape (CT)
1,500 : $2.73917
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
370A (Tc)
4.5V, 10V
0.67mOhm @ 50A, 10V
2V @ 250µA
81 nC @ 4.5 V
±20V
12168 pF @ 25 V
-
200W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
MCTL300N10YHE3-TP
MCTL300N10Y-TP
MOSFET N-CH 100V 300A TOLL-8L
Micro Commercial Co
41,534
In Stock
1 : $10.89000
Cut Tape (CT)
2,000 : $4.53117
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
300A (Tc)
-
1.45mOhm @ 30A, 10V
4V @ 250µA
240 nC @ 10 V
±20V
13258 pF @ 50 V
-
500W
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TOLL-8L
8-PowerSFN
396
In Stock
1 : $7.58000
Cut Tape (CT)
1,800 : $2.90866
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
33A (Ta), 294A (Tc)
6V, 10V
1.75mOhm @ 150A, 10V
3.8V @ 216µA
195 nC @ 10 V
±20V
9300 pF @ 50 V
-
3.8W (Ta), 300W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-HSOF-8-10
8-PowerSFN
2,216
In Stock
1 : $8.42000
Cut Tape (CT)
1,800 : $3.34636
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
35A (Ta), 315A (Tc)
6V, 10V
1.5mOhm @ 150A, 10V
3.8V @ 267µA
242 nC @ 10 V
±20V
11000 pF @ 50 V
-
3.8W (Ta), 300W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-HSOF-8-10
8-PowerSFN
8 PowerVDFN
STL325N4LF8AG
AUTOMOTIVE-GRADE N-CHANNEL 40 V
STMicroelectronics
2,915
In Stock
1 : $4.32000
Cut Tape (CT)
3,000 : $1.68556
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
373A (Tc)
4.5V, 10V
0.75mOhm @ 60A, 10V
2V @ 250µA
95 nC @ 10 V
±16V
7657 pF @ 25 V
-
188W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount, Wettable Flank
PowerFlat™ (5x6)
8-PowerVDFN
PG-TO263-3
IPB60R120P7ATMA1
MOSFET N-CH 600V 26A D2PAK
Infineon Technologies
2,897
In Stock
1 : $5.90000
Cut Tape (CT)
1,000 : $2.08436
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
26A (Tc)
10V
120mOhm @ 8.2A, 10V
4V @ 410µA
36 nC @ 10 V
±20V
1544 pF @ 400 V
-
95W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PSMNxRx-xxYx,115
PSMN1R0-40YSHX
MOSFET N-CH 40V 290A LFPAK56
Nexperia USA Inc.
8,854
In Stock
1 : $5.65000
Cut Tape (CT)
1,500 : $2.37904
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
290A (Tc)
10V
1mOhm @ 25A, 10V
3.6V @ 1mA
122 nC @ 10 V
±20V
9433 pF @ 20 V
Schottky Diode (Body)
333W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
LFPAK56; Power-SO8
SOT-1023, 4-LFPAK
PG-TO263-3
IPB65R145CFD7AATMA1
AUTOMOTIVE_COOLMOS PG-TO263-3
Infineon Technologies
890
In Stock
1 : $7.14000
Cut Tape (CT)
1,000 : $2.68143
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
650 V
17A (Tc)
10V
145mOhm @ 8.5A, 10V
4.5V @ 420µA
36 nC @ 10 V
±20V
1694 pF @ 400 V
-
98W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Showing
of 9

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.