Single FETs, MOSFETs

Results: 5
Manufacturer
ANBON SEMICONDUCTOR (INT'L) LIMITEDDiodes IncorporatedEPCInfineon TechnologiesVishay Siliconix
Series
-eGaN®OptiMOS™TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
50 V100 V150 V
Current - Continuous Drain (Id) @ 25°C
220mA (Ta)8A (Ta), 40A (Tc)12A (Tc)13.2A (Tc)48A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
7mOhm @ 25A, 5V16mOhm @ 20A, 10V134mOhm @ 4A, 10V140mOhm @ 5A, 10V3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
1.6V @ 250µA2.5V @ 9mA3V @ 250µA3.5V @ 12µA
Gate Charge (Qg) (Max) @ Vgs
9.7 nC @ 10 V10 nC @ 5 V25 nC @ 10 V55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
27 pF @ 25 V1140 pF @ 75 V1167 pF @ 25 V1480 pF @ 50 V1700 pF @ 50 V
Power Dissipation (Max)
350mW (Ta)2.1W (Ta), 63W (Tc)3.7W (Ta), 52W (Tc)42W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-50°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
DiePG-TSDSON-8PowerPAK® 1212-8SOT-23TO-252-3
Package / Case
8-PowerTDFNDiePowerPAK® 1212-8TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-252-2
DMN10H170SK3-13
MOSFET N-CH 100V 12A TO252-3
Diodes Incorporated
133,952
In Stock
237,500
Factory
1 : $0.66000
Cut Tape (CT)
2,500 : $0.30713
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
12A (Tc)
4.5V, 10V
140mOhm @ 5A, 10V
3V @ 250µA
9.7 nC @ 10 V
±20V
1167 pF @ 25 V
-
42W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
8-Power TDFN
BSZ160N10NS3GATMA1
MOSFET N-CH 100V 8A/40A 8TSDSON
Infineon Technologies
41,640
In Stock
1 : $2.43000
Cut Tape (CT)
5,000 : $0.95777
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
8A (Ta), 40A (Tc)
6V, 10V
16mOhm @ 20A, 10V
3.5V @ 12µA
25 nC @ 10 V
±20V
1700 pF @ 50 V
-
2.1W (Ta), 63W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8
8-PowerTDFN
PowerPAK 1212-8
SI7113DN-T1-E3
MOSFET P-CH 100V 13.2A PPAK
Vishay Siliconix
15,546
In Stock
1 : $4.37000
Cut Tape (CT)
3,000 : $1.96982
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
13.2A (Tc)
4.5V, 10V
134mOhm @ 4A, 10V
3V @ 250µA
55 nC @ 10 V
±20V
1480 pF @ 50 V
-
3.7W (Ta), 52W (Tc)
-50°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
eGaN Series
EPC2033
GANFET N-CH 150V 48A DIE
EPC
3,991
In Stock
1 : $15.44000
Cut Tape (CT)
500 : $9.73720
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
GaNFET (Gallium Nitride)
150 V
48A (Ta)
-
7mOhm @ 25A, 5V
2.5V @ 9mA
10 nC @ 5 V
-
1140 pF @ 75 V
-
-
-
Surface Mount
Die
Die
BSS138
BSS138
N-CHANNEL ENHANCEMENT MODE MOSFE
ANBON SEMICONDUCTOR (INT'L) LIMITED
202,907
In Stock
1 : $0.25000
Cut Tape (CT)
3,000 : $0.04346
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
220mA (Ta)
4.5V, 10V
3Ohm @ 500mA, 10V
1.6V @ 250µA
-
±20V
27 pF @ 25 V
-
350mW (Ta)
150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
Showing
of 5

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.